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Your search keyword '"Larsen, K. Kyllesbech"' showing total 33 results
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33 results on '"Larsen, K. Kyllesbech"'

5. Electrical transport in (100)CoSi(2)/Si contacts

Author

Lauwers, A., Larsen, K. Kyllesbech, Hove, M. Van, Verbeeck, R., Maex, K., Rossum, M. Van, Vercaemst, A., Meirhaeghe, R. Van, and Cardon, F.

Subjects
Silicides -- Research, Electron transport -- Analysis, Physics
Abstract

The study of the electrical transport in (100)CoSi2/Si contacts reveals that the (100)CoSi2/Si samples are of very high purity and crystalline order. The electrical transport exhibits ideality factors approaching unity. The ideality factor is found to be inversely proportional to the temperature at which the electrical transport occurs in the CoSi2/Si contacts.

Published
1995

6. Heavy doping effects in the diffusion of group IV and V impurities in silicon

Author

Larsen, A. Nylandsted, Larsen, K. Kyllesbech, Andersen, P.E., and Svensson, B.G.

Subjects
Silicon -- Research, Semiconductor doping -- Research, Semiconductors -- Impurity distribution, Physics
Abstract

Doping effects during the diffusion of group IV and V impurities in silicon were investigated. The results showed that at low doping concentrations, diffusivity was linearly dependent on the donor concentration. As the donor concentration increased, the diffusivity sharply increased. This behavior indicated that collective phenomena play an important part at high donor concentrations.

Published
1993

9. Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si.

Author

Lombardo, S., Larsen, K. Kyllesbech, Raineri, V., La Via, F., Campisano, S. U., Lagomarsino, S., and Kazimirov, A.

Subjects
*ION implantation, *CARBON, *GERMANIUM, *MATERIALS at high temperatures
Abstract

Presents a study which investigated electrical and structural characteristics of carbon coimplanted Ge[subx]Si[sub1-x] layers formed by high dose germanium implantation in (100) silicon followed by rapid thermal annealing. Principle behind the procedure; Description of the experimental setup; Results.

Published
1996
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10. Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples.

Author

Larsen, K. Kyllesbech, Tavares, J., Bender, H., Donaton, R. A., Lauwers, A., and Maex, K.

Subjects
*EPITAXY, *SEMICONDUCTORS, *SILICON, *IRON, *ELECTRON microscopy
Abstract

Deals with a study that detailed the formation of epitaxial semiconducting iron-disilicide grains using an iron-titanium bilayer on (100) silicon. Function of annealing conditions; Composition of the trilayer; Area where the cross-sectional transmission electron microscopy was carried out.

Published
1995
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29. Secondary defect annihilation in ion beam processed Si[sub x]Ge[sub 1-x] layers using titanium....

Author

Larsen, K. Kyllesbech and La Via, F.

Subjects
*SILICON, *SILICIDES, *BACKSCATTERING
Abstract

Presents the secondary defect annihilation titanium silicidation in Si[sub x]Ge[sub 1-x] layers, produced by high dose Ge implants in silicon. Influence of the silicide thickness on the residual damage; Use of Rutherford backscattering spectrometry; Observance of the germanium diffusion and reaction during the silicidation.

Published
1995
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