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589 results on '"Liao, C.-H."'

8. High-mobility ZnVxOy/ZnO conduction path in ZnO/V/ZnO multilayer structure.

Author

Li, B. J., Wei, Y. S., Liao, C. H., Chen, W. H., Chou, C. Y., Cheng, C., and Liu, C. Y.

Subjects
ZINC oxide, INDIUM gallium zinc oxide, TWO-dimensional electron gas, PHOTOELECTRON spectroscopy, ULTRAVIOLET spectroscopy, ELECTRON affinity
Abstract

In this study, a 300 °C-annealed 3 × 4 V/ZnO multilayer structure demonstrates the lowest resistivity (3.82 × 10−3 Ω cm) and the highest mobility (18 cm2/V s) among the studied V/ZnO multilayer structures. By measuring the energy bandgap (Eg), work function (Φ), and electron affinity (χ) by ultraviolet photoelectron spectroscopy and photoluminescence analysis, the corresponding energy band diagram at the ZnVxOy/ZnO interface can be constructed. A potential is observed at the ZnVxOy/ZnO interface, which induces the two-dimensional electron gas (2DEG) effect, and this is attributed to the high-mobility conduction path. The potential well directly relates to the Φ difference between the ZnO and ZnVxOy layers, which is determined to be 0.22, 0.46, and −0.1 eV for the as-deposited, 300 °C-annealed, and 500 °C-annealed V/ZnO multilayer structures, respectively. The 300 °C-annealed V/ZnO multilayer structure could possibly have the largest depth in the potential well. This supports the 2DEG mechanism for the high mobility of the 300 °C-annealed V/ZnO multilayer structure. [ABSTRACT FROM AUTHOR]

Published
2021
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12. Developing a Diagnosis System of Work-Related Capabilities for Students: A Computer-Assisted Assessment

Author

Liao, C. H., Yang, M. H., and Yang, B. C.

Abstract

A gap exists between students' employment needs and higher education offerings. Thus, developing the capability to meet the learning needs of students in supporting their future aspirations should be facilitated. To bridge this gap in practice, this study uses multiple methods (i.e., nominal group technique and instructional systems development) and robust tests (e.g., reliability and validity) to develop a diagnosis system of work-related capabilities. The research participants are twofold. At the early stage, this study invites three professors and three senior Human Resources managers to join the panel and help this study develop required capabilities. At the design and implementation stages, the research participants are freshman students at a famous university in Taiwan. This system enables college students to evaluate their capability scores by comparing themselves with the performances of prior students. The diagnosis results not only help students make learning plans during their university education, but also assist educators in adjusting the structure of the curriculum. Future studies are invited to use or adapt the assessment of work-related capabilities, as well as proposed system procedure and architecture this study developed.

Published
2013
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26. Trends in the susceptibility of methicillin-resistant Staphylococcus aureus to nine antimicrobial agents, including ceftobiprole, nemonoxacin, and tyrothricin: results from the Tigecycline In Vitro Surveillance in Taiwan (TIST) study, 2006–2010

Author

Chen, Y.-H., Liu, C.-Y., Ko, W.-C., Liao, C.-H., Lu, P.-L., Huang, C.-H., Lu, C.-T., Chuang, Y.-C., Tsao, S.-M., Chen, Y.-S., Liu, Y.-C., Chen, W.-Y., Jang, T.-N., Lin, H.-C., Chen, C.-M., Shi, Z.-Y., Pan, S.-C., Yang, J.-L., Kung, H.-C., Liu, C.-E., Cheng, Y.-J., Liu, J.-W., Sun, W., Wang, L.-S., Yu, K.-W., Chiang, P.-C., Lee, M.-H., Lee, C.-M., Hsu, G.-J., and Hsueh, P.-R.

Published
2014
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37. Mechanism of Ag sulfurization resistance improvement by alloying solutes in Ag-based alloy films.

Author

Chen, Y. H., Lin, E. J., Liao, C. H., and Liu, C. Y.

Subjects
SILVER, SULFUR, SILVER alloys, THIN films, CONDUCTION electrons, CHEMICAL shift (Nuclear magnetic resonance)
Abstract

The Ag sulfurization resistance of the pure Ag film and four Ag-based alloy films was evaluated by the reflectance decay after the Ag sulfurization test. Among all Ag-based alloy films, the In alloying solute in the Ag-In alloy film shows the best resistance to the Ag sulfurization. Using x-ray photoelectron spectroscopy analysis, the chemical state of the alloying solutes in the Ag-based alloy films was examined. It is found that, with being alloyed in the Ag matrix phase, the 3d5/2 core-level peak positions of the alloying solutes (In, Sn, and Pd) shift toward the lower binding energy region, which is defined as a negative chemical shift. The chemical shifts of In, Sn, and Pd alloying solutes are –0.31 eV, –0.23 eV, and –0.2 eV, respectively. The absolute value of the negative chemical shift represents the tendency of Ag atoms losing valence electrons to the alloying solutes. As the Ag atoms lose valence electrons to the alloying solutes, the Ag atoms have a less tendency to provide the valence electrons to form covalent bonding with S atoms, which suppresses the Ag sulfurization reaction (2Ag + S → Ag2S). Therefore, the larger the absolute value of the negative chemical shift, the higher is the reflectance decay (lesser Ag sulfurization resistance). [ABSTRACT FROM AUTHOR]

Published
2018
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