Search

In this article, we introduce a freeze-out scheme for the dynamical models near the QCD critical point through coupling the decoupled classical particles with the order parameter field. With a modified distribution function that satisfies specific static fluctuations, we calculate the correlated fluctuations of net protons on the hydrodynamic freeze-out surface. A comparison with recent STAR data shows that our model calculations could roughly reproduce energy-dependent cumulant C4 and κσ² of net protons through tuning the related parameters. However, the calculated C2 and C3 with both Poisson and binomial baselines are always above the experimental data due to the positive contributions from the static critical fluctuations. To qualitatively and quantitatively describe all the related experimental data, the dynamical critical fluctuations and more realistic noncritical fluctuation baselines should be investigated in the near future. [ABSTRACT FROM AUTHOR]

Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs’ crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design. [ABSTRACT FROM AUTHOR]