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Magnetic skyrmions emerge as promising quasi-particles for encoding information in nextgeneration spintronic devices. Their innate flexibility in shape is essential for the applications although they were often ideally treated as rigid particles. In this work, we investigated the voltagecontrolled uniform strain mediated dynamics of deformed skyrmions in heterostructures with a flower-shaped magnetic nanostructure, using micromagnetic simulations. The simulated results revealed the possible states of isolated skyrmion nucleated in the nanostructure, which can be mutually switched by applying suitable in-plane strain pulses. In addition, it was found that the skyrmion motions are driven by the emerging internal forces and strain force, which originate from the asymmetric deformation of skyrmion structures. Furthermore, an analytical model of deformed skyrmions was proposed to interpret the dependences of internal forces and strain force on the asymmetric deformation of skyrmion, with some formulae derived for these forces in a semi-analytical approach. Further calculations based on these formulae verified the forces appearing in the skyrmion motion, with the resulting forces showing consistence with the simulated data. This suggested that our semi-analytical model successfully captures the main physics responsible for the motion of deformed skyrmion in the nanostructure. Our work extends the understanding of the mechanics emerging in deformed skyrmion, and provides an effective approach for deterministic manipulation of deformed skyrmion motion via strain forces and internal forces, which may be instructive to design of skyrmion-based spintronic devices.

Stereo image super-resolution (SR) refers to the reconstruction of a high-resolution (HR) image from a pair of low-resolution (LR) images as typically captured by a dual-camera device. To enhance the quality of SR images, most previous studies focused on increasing the number and size of feature maps and introducing complex and computationally intensive structures, resulting in models with high computational complexity. Here, we propose a simple yet efficient stereo image SR model called NAFRSSR, which is modified from the previous state-of-the-art model NAFSSR by introducing recursive connections and lightweighting the constituent modules. Our NAFRSSR model is composed of nonlinear activation free and group convolution-based blocks (NAFGCBlocks) and depth-separated stereo cross attention modules (DSSCAMs). The NAFGCBlock improves feature extraction and reduces number of parameters by removing the simple channel attention mechanism from NAFBlock and using group convolution. The DSSCAM enhances feature fusion and reduces number of parameters by replacing 1x1 pointwise convolution in SCAM with weight-shared 3x3 depthwise convolution. Besides, we propose to incorporate trainable edge detection operator into NAFRSSR to further improve the model performance. Four variants of NAFRSSR with different sizes, namely, NAFRSSR-Mobile (NAFRSSR-M), NAFRSSR-Tiny (NAFRSSR-T), NAFRSSR-Super (NAFRSSR-S) and NAFRSSR-Base (NAFRSSR-B) are designed, and they all exhibit fewer parameters, higher PSNR/SSIM, and faster speed than the previous state-of-the-art models. In particular, to the best of our knowledge, NAFRSSR-M is the lightest (0.28M parameters) and fastest (50 ms inference time) model achieving an average PSNR/SSIM as high as 24.657 dB/0.7622 on the benchmark datasets. Codes and models will be released at https://github.com/JNUChenYiHong/NAFRSSR.

Quantum spin liquids (QSLs) represent a novel state where spins are highly entangled but do not order even at zero temperature due to strong quantum fluctuations. Such a state is mostly studied in Heisenberg models defined on geometrically frustrated lattices. Here, we turn to a new triangular-lattice antiferromagnet PrMgAl$_{11}$O$_{19}$, in which the interactions are believed to be of Ising type. Magnetic susceptibility measured with an external field along the $c$ axis is two orders of magnitude larger than that with a field in the $ab$ plane, displaying an ideal easy-axis behavior. Meanwhile, there is no magnetic phase transition or spin freezing observed down to 1.8 K. Ultralow-temperature specific heat measured down to 50 mK does not capture any phase transition either, but a hump at 4.5 K, below which the magnetic specific heat exhibits a quasi-quadratic temperature dependence that is consistent with a Dirac QSL state. Inelastic neutron scattering technique is also employed to elucidate the nature of its ground state. In the magnetic excitation spectra, there is a gapless broad continuum at the base temperature 55~mK, in favor of the realization of a gapless QSL. Our results provide a scarce example for the QSL behaviors observed in an Ising-type magnet, which can serve as a promising platform for future research on QSL physics based on an Ising model., Comment: 11 pages, 5 figures

Sliding ferroelectricity is a unique type of polarity recently observed in a properly stacked van der Waals bilayer. However, electric-field control of sliding ferroelectricity is hard and could induce large coercive electric fields and serious leakage currents which corrode the ferroelectricity and electronic properties, which are essential for modern two-dimensional electronics and optoelectronics. Here, we proposed laser-pulse deterministic control of sliding ferroelectricity in bilayer h-BN by first principles and molecular dynamics simulation with machine-learned force fields. The laser pulses excite shear modes which exhibit certain directional movements of lateral sliding between bilayers. The vibration of excited modes under laser pulses is predicted to overcome the energy barrier and achieve the switching of sliding ferroelectricity. Furthermore, it is found that three possible sliding transitions - between AB (BA) and BA (AB) stacking - can lead to the occurrence of dynamical magnetic fields along three different directions. Remarkably, the magnetic fields are generated by the simple linear motion of nonmagnetic species, without any need for more exotic (circular, spiral) pathways. Such predictions of deterministic control of sliding ferroelectricity and multi-states of dynamical magnetic field thus expand the potential applications of sliding ferroelectricity in memory and electronic devices.

We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffraction revealed antiferromagnetic noncollinear order with a commensurate propagation vector k = (1/2, 1, 0). The refined magnetic moment size of Ni2+ at 1.5 K is 1.84{\mu}B, and its noncollinear spin texture is confirmed by first-principles calculations. Inelastic neutron-scattering results and density functional theory calculations confirmed the quasi-one-dimensional nature of the spin systems., Comment: 18 pages, 5 figures

Linear magnetoelectric effect is an attractive phenomenon in condensed matters and provides indispensable technological functionalities. Here a colossal linear magnetoelectric effect with diagonal component alfa_33 reaching up to ~480 ps/m is reported in a polar magnet Fe2Mo3O8, and this effect can persist in a broad range of magnetic field (~20 T) and is orders of magnitude larger than reported values in literature. Such an exceptional experimental observation can be well reproduced by a theoretical model affirmatively unveiling the vital contributions from the exchange striction, while the sign difference of magnetocrystalline anisotropy can also be reasonably figured out., Comment: 14 pages and 4 figures

The honeycomb-lattice cobaltate Na$_3$Co$_2$SbO$_6$ has recently been proposed to be a proximate Kitaev quantum spin liquid~(QSL) candidate. However, non-Kitaev terms in the Hamiltonian lead to a zigzag-type antiferromagnetic~(AFM) order at low temperatures. Here, we partially substitute magnetic Co$^{2+}$ with nonmagnetic Zn$^{2+}$ and investigate the chemical doping effect in tuning the magnetic ground states of Na$_3$Co$_{2-x}$Zn$_x$SbO$_6$. X-ray diffraction characterizations reveal no structural transition but quite tiny changes on the lattice parameters over our substitution range $0\leq x\leq0.4$. Magnetic susceptibility and specific heat results both show that AFM transition temperature is continuously suppressed with increasing Zn content $x$ and neither long-range magnetic order nor spin freezing is observed when $x\geq0.2$. More importantly, a linear term of the specific heat representing fermionic excitations is captured below 5~K in the magnetically disordered regime, as opposed to the $C_{\rm m}\propto T^3$ behavior expected for bosonic excitations in the AFM state. Based on the data above, we establish a magnetic phase diagram of Na$_3$Co$_{2-x}$Zn$_x$SbO$_6$. Our results indicate the presence of gapless fractional excitations in the samples with no magnetic order, evidencing a potential QSL state induced by doping in a Kitaev system., Comment: 10 pages, 5 figures

The electrocaloric effect (ECE) offers a promising alternative to the traditional gas compressing refrigeration due to its high efficiency and environmental friendliness. The unusual negative electrocaloric effect refers to the adiabatic temperature drops due to application of electric field, in contrast with the normal (positive) ECE, and provides ways to improve the electrocaloric efficiency in refrigeration cycles. However, negative ECE is unusual and requires a clear understanding of microscopic mechanisms. Here, we found unexpected and extensive negative ECE in nonpolar orthorhombic, tetragonal, and cubic phases of halide and oxide perovskite at wide range of temperature by means of first-principle-based large scale Monte Carlo methods. Such unexpected negative ECE originates from the octahedral tilting related entropy change rather than the polarization entropy change under the application of electric field. Furthermore, a giant negative ECE with temperature change of 8.6 K is found at room temperature. This giant and extensive negative ECE in perovskite opens up new horizon in the research of caloric effects and broadens the electrocaloric refrigeration ways with high efficiency., Comment: 11 pages, 7 figures

Very recently, a 3$d$ based honeycomb cobaltate Na$_2$Co$_2$TeO$_6$ has garnered tremendous attention due to the proposed proximity to the Kitaev spin-liquid state as its 4$d$/5$d$ counterparts. Here, we use Zn to substitute Co in a broad range and perform systematic studies on Na$_2$Co$_{2-x}$Zn$_x$TeO$_6$ by structural, magnetic, and thermodynamic measurements, and track the doping evolution of its magnetic ground states. Due to the extremely close radii of Zn$^{2+}$ and high-spin Co$^{2+}$ ions, the substitution can be easily achieved. X-ray diffractions reveal no structural transition but only minor changes on the lattice parameter $c$ over a wide substitution range $0 \leq x \leq 1.5$. Magnetic susceptibility and specific heat measurements both suggest an antiferromagnetic ground state which is gradually suppressed with doping. It can survive with $x$ up to $\sim1.0$. Then it evolves into a spin-glass phase with short-range order that is rapidly supplanted by a magnetically disordered state when $x \geq 1.3$. By summarizing all these data, we construct a magnetic phase diagram of Na$_2$Co$_{2-x}$Zn$_x$TeO$_6$. Our results demonstrate that the Zn doping can effectively suppress the magnetic order and induce a possibe quantum paramagnetic state. These may serve as a platform to investigate the Kitaev physics in this system., Comment: 9 pages, 5 figures

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural rotations, but its controlled switching remains elusive due to its invariance under both time reversal and spatial inversion. Here, we demonstrate electrical switching of ferro-rotational domain states in nanometer-thick 1T-TaS$_2$ crystals in its charge-density-wave phases. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, realized in a simple two-terminal configuration using a volt-scale voltage. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable, and nonvolatile isothermal state switching at room temperature. These results pave the path for manipulation of the ferro-rotational order and its nanoelectronic applications.

Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71{\deg} ferroelastic and 180{\deg} ferroelectric switching paths by combining the out-of-plane electric field and in-plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71{\deg} domain wall. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. Our studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling based devices.

Metal thio(seleno)phosphates MPX$_3$ have attracted considerable attentions with wide spanned band gaps and rich magnetic properties. In this series, two neighboring members MnPS$_3$ and NiPS$_3$ differ in magnetic atoms, magnetic easy axes, spin anisotropy, as well as nearest-neighbor magnetic interactions. The competition between these components may cause intriguing physical phenomena. In this article, the evolution of magnetism of Mn$_{1-x}$Ni$_x$PS$_3$ series is reported. Despite the incompatible antiferromagnetic orders of two end members, the antiferromagnetism persists as the ground state in the whole substitution region. The magnetic ordering temperature $T_{\rm N}$ show nonmonotonic V-shape behavior, and the reentrant spin glass phase at x=0.5 is observed. In addition, abnormal bifurcation of $T_{\rm N}$ occurs at x=0.75, which may be due to the temperature-dependent spin reorientation or phase separation. The evolution of magnetism is further confirmed semi-quantitatively by our density functional theory calculations. Our study indicates that exotic magnetism can be intrigued when multi-degrees of freedom are involved in these low-dimensional systems, which call for more in-depth microscopic studies in future.

Disorder is important in the study of quantum spin liquids, but its role on the spin dynamics remains elusive. Here, we explore the disorder effect by investigating the magnetic-field dependence of the low-energy magnetic excitations in a triangular-lattice frustrated magnet YbZnGaO$_4$ with inelastic neutron scattering. With an intermediate field of 2.5 T applied along the $c$-axis, the broad continuum at zero field becomes more smeared both in energy and momentum. With a field up to 10 T, which fully polarizes the magnetic moments, we observe clear spin-wave excitations with a gap of $\sim$1.4 meV comparable to the bandwidth. However, the spectra are significantly broadened. The excitation spectra both at zero and high fields can be reproduced by performing classical Monte Carlo simulations which take into account the disorder effect arising from the random site mixing of nonmagnetic Zn$^{2+}$ and Ga$^{3+}$ ions. These results elucidate the critical role of disorder in broadening the magnetic excitation spectra and mimicking the spin-liquid features in frustrated quantum magnets., Comment: Published in PRB, 10 pages, 3 figures

The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the stability and low-energy orientations of boundaries between different phases in ferroelectrics. Taking lead zirconate titanate and bismuth ferrite as two examples, we demonstrate that the low-energy orientations of interphase boundaries are largely determined by minimizing the electrostatic and elastic energies. Phase-field simulations are employed to analyze the competition between the interfacial energy and the electrostatic and elastic energies. Our simulation results demonstrate that the lowering of crystal symmetry could occur due to the electrical and mechanical incompatibilities between the two phases, which can be used to explain the experimentally observed low-symmetry phases near morphotropic phase boundaries. Our work provides theoretical foundations for understanding and controlling the interphase boundaries in ferroelectric materials for multifunctional applications.

Magnetic susceptibility, specific heat, dielectric, and electric polarization of LiCuFe2(VO4)3 have been investigated. Two sequential antiferromagnetic transitions at TN1 ~ 9.95 K and TN2 ~ 8.17 K are observed under zero magnetic field. While a dielectric peak at TN1 is clearly identified, the measured pyroelectric current also exhibits a sharp peak at TN1, implying the magnetically relevant ferroelectricity. Interestingly, another pyroelectric peak around TN2 with opposite signal is observed, resulting in the disappearance of electric polarization below TN2. Besides, the electric polarization is significantly suppressed in response to external magnetic field, evidencing remarkable magnetoelectric effect. These results suggest the essential relevance of the magnetic structure with the ferroelectricity in LiCuFe2(VO4)3, deserving for further investigation of the underlying mechanism., Comment: 17 pages, 5 figures

Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li2Co(WO4)2 samples. Under zero magnetic field, two successive magnetic transitions at TN1 ~ 9.4 K and TN2 ~ 7.4 K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li2Co(WO4)2 enters an incommensurate magnetic state with a temperature dependent k between TN1 and TN2. The magnetic propagation vector locks-in to a commensurate value k = (1/2, 1/4, 1/4) below TN2. The antiferromagnetic structure is refined at 1.7 K with Co2+ magnetic moment 2.8(1) uB, consistent with our first-principles calculations.

Iridates have been providing a fertile ground for studying emergent phases of matter that arise from delicate interplay of various fundamental interactions with approximate energy scale. Among these highly focused quantum materials, perovskite Sr2IrO4 belonging to the Ruddlesden-Popper series stands out and has been intensively addressed in the last decade, since it hosts a novel Jeff = 1/2 state which is a profound manifestation of strong spin-orbit coupling. Moreover, the Jeff = 1/2 state represents a rare example of iridates that has been better understood both theoretically and experimentally. In this progress report, we take Sr2IrO4 as an example to overview the recent advances of the Jeff = 1/2 state in two aspects: materials fundamentals and functionality potentials. In the fundamentals part, we first illustrate basic issues for the layered canted antiferromagnetic order of the Jeff = 1/2 magnetic moments in Sr2IrO4, and then review the progress of the antiferromagnetic order modulation through diverse routes. Subsequently, for the functionality potentials, fascinating properties such as atomic-scale giant magnetoresistance, anisotropic magnetoresistance, and nonvolatile memory, will be addressed. This report will be concluded with our prospected remarks and outlooks.

Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic appealing properties like rigidness to magnetic field, absence of stray field, and ultrafast spin dynamics. One of the urgent challenges, hindering the realization of the full potential of AFM spintronics, has been the performance gap between AFM metals and insulators. Here, we demonstrate the insulator-metal transition and persistently large anisotropic magnetoresistance (AMR) in single crystals Sr2(Ir1-xGax)O4 (0

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one can easily create quadrant center topological polar domain structure. More importantly, a reversible switching of such center topological domain structure between the convergent state with highly conductive confined wall and the divergent state with insulating confined wall can be realized, hence resulting in an apparent resistance change with a large On/Off ratio > 104 and a technically preferred readout current (up to 40 nA). Owing to the topological robustness of the center domain structure, the device exhibits the excellent restoration repeatability over 106 cycles and a long retention over 12 days (> 106 s). This work demonstrates a good example for implementing the exotic polar topologies in high-performance nanoscale devices, and would spur more interest in exploring the rich emerging applications of these exotic topological states.

The magnetic properties of the spin-5/2 double molybdate LiFe(MoO$_4$)$_2$ have been characterized by heat capacity, magnetic susceptibility, and neutron powder diffraction techniques. Unlike the multiferroic system LiFe(MoO$_4$)$_2$ which exhibits two successive magnetic transitions, LiFe(MoO$_4$)$_2$ undergoes only one antiferromagnetic transition at $T_N$ ~ 23.8 K. Its antiferromagnetic magnetic structure with the commensurate propagation vector k = (0, 0.5, 0) has been determined. Density functional theory calculations confirm the antiferromagnetic ground state and provide a numerical estimate of the relevant exchange coupling constants., Comment: 24 pages, 8 figures

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory., Comment: manuscript (21 pages, 4 figures) plus supplementary information

Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) as giant as ~ 160% in a simple resistor structure made of AFM Sr2IrO4 without auxiliary reference layer. The underlying mechanism for the giant AMR is an indispensable combination of atomic scale giant-MR-like effect and magnetocrystalline anisotropy energy, which was not accessed earlier. Furthermore, we demonstrate the bistable nonvolatile memory states that can be switched in-situ without the inconvenient heat-assisted procedure, and robustly preserved even at zero magnetic field, due to the modified interlayer coupling by 1% Ga-doping in Sr2IrO4. These findings represent a straightforward step toward the AFM spintronic devices., Comment: 23 pages, 4 figures

The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here we report an approach for imposing continuously tunable, large epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring its gradual strain relaxation. Taking BiFeO3 as a model system, we demonstrate that the introduction of an ultrathin interface layer allows the creation of a desired strain that can induce phase transition and stabilize a new metastable super-tetragonal phase as well as morphotropic phase boundaries overcoming substrate limitations. Furthermore, continuously tunable strain from tension to compression can be generated by precisely adjusting the thickness of the interface layer, leading to the first achievement of continuous O-R-T phase transition in BiFeO3 on a single substrate. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena.

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and domain evolution further confirm that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of R phase and in-plane stripe nanodomains after heat treatment reveal the memory effect and reversible phase transition. Our findings demonstrate the control of R-Mc-T-super T symmetry changes and the creation of true T phase BiFeO3 with enhanced tetragonality through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which may lead to strong polarization enhancement.

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71{\deg} head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.