1. Improvement of electrical properties of ZnO TFT with NbLaO-based stacked gate dielectrics.
- Author
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Wang, Cong, Liu, Yurong, Wu, Baozi, and Sui, Jian
- Subjects
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INDIUM gallium zinc oxide , *FLAT panel displays , *DIELECTRICS , *ZINC oxide , *SURFACE roughness - Abstract
The double-stacked gate dielectrics (DSGD), which consisted of either NbLaO/Al2O3 or NbLaO/SiO2, were used to improve the electrical performance of zinc oxide thin-film transistor (ZnO-TFT) with single-layer NbLaO gate dielectric (SLGD). Compared to ZnO-TFT with SLGD, the ZnO-TFTs with DSGD exhibit better electrical performance, specifically for the device with the NbLaO/SiO2 DSGD, with an increase of the field-effect mobility from 5.77 cm2V − 1 s − 1 to 39.64 cm2V − 1 s − 1 , an enhancement of the on/off current ratio by two orders of magnitude, a reduction of the subthreshold slope from 110 mV/decade to 70 mV/decade. The performance enhancements are attributed to a low root-mean-square surface roughness of less than 0.3 nm and a low trap-state density of less than 6 × 1 0 1 1 cm − 2 (even 2. 4 × 1 0 1 1 cm − 2 for the NbLaO/SiO2 DSGD) in the bulk of the channel and at the ZnO/NbLaO interface. The results imply that ZnO-TFTs with DSGD have the potential for the application of high-resolution flat panel display. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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