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Abstract In this study, the performance of memristive devices made of oxygen‐deficient HfO2 films is investigated when exposed to various electrical pulse stimulations. The devices exhibited signs of fatigue with the number increasing of a fixed frequency pulse, mirroring the synaptic adaptation to repeat stimuli. Interestingly, the synaptic behavior can be highly simulated by logic function, and the pulse frequency and magnitude play different roles in changing the synaptic curves. Only pulses with certain quantized frequencies can reshape the synaptic current response curve. In addition, a similarity is observed between the frequency stability of these devices and the biological lifespan in response to external stimuli. These observations strengthen the case for the potential of memristors in emulating cognitive functions.

In this work, the implementation of HfZrO layers for the tunneling, charge trapping, and blocking mechanisms within the device offer benefits in terms of programmability and data retention. This configuration has resulted in a memory device that can achieve a significant difference in threshold voltage of around 2 V per memory level. This difference is crucial for effectively distinguishing between multiple levels of memory in MLC applications. Additionally, the device operates at low programming voltages below 14 V. Furthermore, the device showcases impressive endurance and data retention capabilities, maintaining a large memory window over extended periods and under varying temperature conditions. The advancement in the a-IGZO-based memory device, characterized by its uniform oxide stacking, presents a viable solution to the industry’s requirement for memory storage options that are efficient, dependable, and economical.

The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe2 channel, coupled with an oxygen-deficient (OD)-HfO2 layer structure. In these transistors, the application of negative gate pulses resulted in a notable increase in the post-synaptic current, while positive pulses led to a decrease. This distinctive response can be attributed to the dynamic interplay of charge interactions, significantly influenced by the ferroelectric characteristics of the OD-HfO2 layer. The findings from this study highlight the capability of this particular TFT configuration in closely mirroring the intricate functionalities of biological neurons, paving the way for advancements in bio-inspired computing technologies.