Search

Charge density wave (CDW) resulted from a small distortion in the lattice is able to create new orders beyond the original lattice. In 2H-NbSe2, one of the layered transition metal dichalcogenides (TMD), the 3x3 charge order appears in two-dimensional (2D) layers. Although CDW is usually described by a sine wave, the spatial distribution within a 2D layer has never been systematically visualized. Here by using scanning tunneling microscopy (STM) and density functional theory (DFT), we have monitored the evolution of 3x3 CDW along c-axis and realized a nearly tomography scan of CDW of the topmost layer. The results show that the strength of 3x3 charge order varies while increasing the tunneling current. The 3x3 charge order is relatively strong at the outermost Se level and decreases while probing in between Se and Nb levels. Interestingly, the 3x3 charge order gets strong again as reaching Nb level but along with a phase shift. We further calculated the orbital charge distributions and found that both CDW intensity modulation and phase shift are strongly correlated with the distribution of Se p orbitals and Nb d orbitals., Comment: 12 pages, 4 figures

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.

We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we find several topological band inversions in bulk CoTe2, which gives rise to a ladder of spin-polarized surface states over a wide range of energies. In contrast to the surface states which typically display Rashba-type in-plane spin splitting, we find that CoTe2 hosts novel out-of-plane spin polarization as well. Our work establishes CoTe2 as a potential candidate for the exploration of Dirac fermiology and applications in spintronic devices, infrared plasmonics, and ultrafast optoelectronics., Comment: 9 pages,7 figures, Accepted in Phys. Rev. B

The formation of a charge density wave (CDW) in two-dimensional (2D) materials caused by Peierls instability is a controversial topic. This study investigates the extensively debated role of Fermi surface nesting in causing the CDW state in 2H-NbSe$_{2}$ materials. Four NbSe$_{2}$ structures (i.e., normal, stripe, filled, and hollow structures) are identified on the basis of the characteristics in scanning tunneling microscopy images and first-principles simulations. The calculations reveal that the filled phase corresponds to Peierls' description; that is, it exhibits fully opened gaps at the CDW Brillouin zone boundary, resulting in a drop at the Fermi level in the density of states and the scanning tunneling spectroscopy spectra. The electronic susceptibility and phonon instability in the normal phase indicate that the Fermi surface nesting is triggered by two nesting vectors, whereas the involvement of only one nesting vector leads to the stripe phase. This comprehensive study demonstrates that the filled phase of NbSe$_{2}$ can be categorized as a Peierls-instability-induced CDW in 2D systems., Comment: 4 figures

Motivated by the intriguing possibilities of steering ultrafast non-adiabatic processes through the geometric properties of bands in quantum materials by laser pulses, we extend a wave-packet transport theory, previously well-established in the adiabatic regime that intuitively captured geometric properties of bands, to the transient and non-adiabatic regime. This extension facilitates us to investigate macroscopic ways of manifesting microscopic band-geometric effects that highlight the special capability of non-adiabatic drivings not available to adiabatic drivings. These include imprinting band-geometric properties to the current rate after switching off the laser pulses and the induction of intrinsic macroscopic spin polarisation with an orientation not accessible by adiabatic processes. In particular, the microscopic geometrically-rooted intrinsic spin coherence is shown to underlie the spin-mediated parts of the macroscopic photocurrents. Through explicit calculations of an example with Rashba spin-orbit coupling, the spin-mediated part is shown to be discernible from the non-spin-mediated part in terms of the anisotropy of the photocurrents. Working principles behind the above theoretical results allegedly applicable beyond the Rashba example are distilled to inspect experimental data collected for SnSe, exhibiting considerable anisotropic effects. Consistency between theory and experiment is observed, paving the way of further exploration into the above intended direction., Comment: substantially revised and comparison to experiments added. 15+26 pages, 7 figures

Sc5Rh6Sn18 with a cage-type quasiskutterudite crystal lattice and type II superconductivity, with superconducting transition temperature Tc = 4.99 K, was investigated under hydrostatic high-pressure (HP) using electrical transport, synchrotron X-ray diffraction (XRD) and Raman spectroscopy. Our data show that HP enhance the metallic nature and Tc of the system. Tc is found to show a continuous increase reaching to 5.24 K at 2.5 GPa. Athough the system is metallic in nature, Raman spectroscopy investigations at ambient pressure revealed the presence of three weak modes at 165.97, 219.86 and 230.35 cm-1, mostly related to the rattling atom Sc. The HP-XRD data revealed that the cage structure was stable without any structural phase transition up to ~7 GPa. The lattice parameters and volume exhibited a smooth decrease without any anomalies as a function of pressure in this pressure range. In particular, a second order Birch-Murnaghan equation of state can describe the pressure dependence of the unit cell volume well, yielding a bulk modulus of ~ 97 GPa. HP Raman investigations revealed a linear shift of all the three Raman modes to higher wavenumbers with increasing pressure up to ~8 GPa. As the pressure enhances the bond overlap, thus inducing more electronic charges into the system, HP-XRD and Raman results may indciate the possibility of obtaining higher Tc with increasing pressures in this pressure range.

Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications., Comment: 12 pages, 11 figures

Using spin- and angle- resolved photoemission spectroscopy (spin-ARPES) together with ${\it ab~initio}$ calculations, we demonstrate the existence of a type-II Dirac semimetal state in NiTe$_2$. We show that, unlike PtTe$_2$, PtSe$_2$, and PdTe$_2$, the Dirac node in NiTe$_2$ is located in close vicinity of the Fermi energy. Additionally, NiTe$_2$ also hosts a pair of band inversions below the Fermi level along the $\Gamma-A$ high-symmetry direction, with one of them leading to a Dirac cone in the surface states. The bulk Dirac nodes and the ladder of band inversions in NiTe$_2$ support unique topological surface states with chiral spin texture over a wide range of energies. Our work paves the way for the exploitation of the low-energy type-II Dirac fermions in NiTe$_2$ in the fields of spintronics, THz plasmonics and ultrafast optoelectronics., Comment: 4+ pages and 4 figures; minor revision

We explore the broadband excitation spectrum of bulk PtTe$_2$ using electron energy loss spectroscopy and density functional theory. In addition to infrared modes related to intraband 3D Dirac plasmon and interband transitions between the 3D Dirac bands, we observe modes at 3.9, 7.5 and 19.0 eV in the ultraviolet region. The comparison of the excitation spectrum with the calculated orbital-resolved density of states allows us to ascribe spectral features to transitions between specific electronic states. Additionally, we study the thickness dependence of the high-energy plasmon in the PtTe2 thin films. We show that, unlike graphene, the high-energy plasmon in PtTe2 thin film gets red-shifted by 2.5 eV with increasing thickness., Comment: 9 pages with 7 figures