1. Gate voltage modulation of the superconducting state in a degenerate semiconductor
- Author
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Barik, Bikash C., Chakraborti, Himadri, Pal, Buddhadeb, Jain, Aditya K., Bhunia, Swagata, Samanta, Sounak, Laha, Apurba, Mahapatra, Suddhasatta, and Gupta, K. Das
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Strongly Correlated Electrons ,Condensed Matter - Superconductivity - Abstract
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments., Comment: 6 pages, 5 figures, supplementary material attached. Comments are welcome
- Published
- 2024