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This paper proposes a physics-based model based on possible chemical processes responsible for the resistive switching of sputter-deposited silicon oxide films. Diffusion–reaction differential equations are utilized to pursue physical and chemical origins of the switching phenomenon. Based on the theoretical model, the chemical reaction process is analytically and numerically solved, and an analytical model is proposed to elucidate the phenomenon. Theoretical simulation results are examined from the point of view of suitability of parameter values, and the analytical model is used to interpret the simulation results. Simulation results greatly assist in understanding the switching processes of silicon oxide films; that is, the diffusion processes of hydrogen and water molecules primarily rule the switching processes, and the displacement of oxygen atoms is assisted by those processes. The analytical model predicts that high-speed switching requires a large number of traps in the oxide, a relatively large binding energy, and a low leakage current; all of them can easily be satisfied for sputter-deposited oxide films. A combination of the theoretical simulation model and the analytical model gives a guideline of how the sputter-deposited silicon oxide films can be made suitable for high-speed resistive switching applications. [ABSTRACT FROM AUTHOR]

This study aimed to estimate the relationship between fish size and otolith size of four creek-associated fishes (Anodontostoma chacunda, Epinephelus diacanthus, Johnius glaucus and Mugil cephalus) collected from the north-eastern Arabian Sea from November 2021 to November 2022. The numerical relations were established using regression between fish size (Total length-TL and Body weight-BW) and otolith dimensions (Length-OL, Weight-Owt, Area-OA, Width-OW and Perimeter-OP). All regressions between the fish size and otolith morphometric measurements were highly correlated (R2 > 0.8), which indicates the robustness of the model. Taxonomists can use findings from this study for species confirmation and reconstruction of past species assemblages. These findings might provide insight into predicting the prey size in food and feeding studies to explore the food web dynamics. [ABSTRACT FROM AUTHOR]

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results. [ABSTRACT FROM AUTHOR]

The analog performance of 100 nm dual-material gate (DMG) CMOS devices in the subthreshold region of operation is evaluated. The DMG CMOS devices have better performance as compared to their single-material gate (SMG) counterpart.

The effects of double-halo (DH) and single-halo or lateral asymmetric channel (LAC) doping on the subthreshold analog performance of 100-nm CMOS devices are investigated. The results have shown that the CMOS amplifiers made with the halo implanted devices have higher voltage gain over their conventional counterpart and the voltage gain has improved even when LAS doping is made on both the p- and n-channel devices of the amplifier.

An analytical subthreshold surface potential model for short-channel MOSFET is presented considering the effect of varying depth of the channel depletion layer on the surface potential. The effect of depletion layers around the source and drain junctions on the surface potential that is very important for short channel devices, is included in the model.

Organic fluorescent semiconducting nanomaterials have gained widespread research interest owing to their potential applications in the arena of high-tech devices. We designed two pyrazaacene-based compounds, their stacked system, and the role of gluing interactions to fabricate nanomaterials, and determined the prospective band gaps utilizing the density functional theory calculation. The two pyrazaacene derivatives containing complementary amide linkages (–CONH and –NHCO) were efficiently synthesized. The synthesized compounds are highly soluble in common organic solvents as well as highly fluorescent and photostable. The heterocycles and their mixture displayed efficient solvent dependent fluorescence in the visible region of the solar spectrum. Notably, the compounds were associated through complementary NH•••O = C type hydrogen bonding, π–π stacking, and hydrophobic interactions, and thereby afforded nanomaterials with a low band gap. Fascinatingly, the fabricated stacked nanomaterial system exhibited resistive switching behavior, leading to the fabrication of an efficient write-once-read-many-times memory device of crossbar structure. [ABSTRACT FROM AUTHOR]