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37 results on '"Mantooth, Homer Alan"'

2. A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters

Author

Paul, Riya, Alizadeh, Rayna, Li, Xiaoling, Chen, Hao, Wang, Yuyang, and Mantooth, Homer Alan

Abstract

Double-sided cooled (DSC) power module structures enable high power density for motor drive inverters ideal for electric vehicles (EVs). This work presents a DSC power module using fast-switching 1200 V silicon carbide mosfet devices in a half-bridge topology, with heterogeneous integration of gate control circuitry and condition monitoring. This article describes the module's novel design and a top-down approach to it driven by a prototype inverter for EVs. Highlighted are the specific implementations of the module's key enabling technologies: 1) vertical device-top interconnects in the form of truncated rectangular pyramidal blocks made of copper, enabling maximum heat dissipation; 2) a low-temperature cofired ceramic interposer for high mechanical strength and improved electrical isolation; 3) built-in gate driver boards; 4) embedded temperature sensors. This article also details the module's unique fabrication process, highlighting its good yield and ease of fabrication. Finally, the prototype module is validated using double-pulse tests in a clamped inductive load at full load current and 800-V dc-link voltage.

Published
2024
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6. Parallel Connection of Silicon Carbide MOSFETs - Challenges, Mechanism, and Solutions

Author

Li, Helong, Zhao, Shuang, Wang, Xiongfei, Ding, Lijian, Mantooth, Homer Alan, Li, Helong, Zhao, Shuang, Wang, Xiongfei, Ding, Lijian, and Mantooth, Homer Alan

Abstract

Power semiconductor devices are often connected in parallel to increase the current rating of the power conversion systems. However, due to mismatched circuit parameters or semiconductor fabrication discrepancies, the current of paralleled power semiconductor devices can be unbalanced, which potentially leads to accelerated aging and long-term reliability issues. The fast-switching speed of silicon carbide (SiC) devices aggravates this problem due to its higher sensitivity to parasitic parameters. Numerous efforts have been dedicated to analyzing and addressing the current imbalance issue of paralleling SiC devices. This article comprehensively summarizes and presents state-of-the-art research regarding the current imbalance in paralleled SiC devices. Degree of imbalance is proposed to comprehensively quantify the current mismatch. Starting with mechanism analysis, different types of current imbalance are categorized. Various device parameters and the package layout that impact the current distribution are investigated. The existing solutions including passive methods and active methods are concluded and categorized. This work also incorporates insight into the future development needs of high-power multichip SiC module packaging and driving technologies., QC 20230725

Published
2023
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7. Interleaving Clusters of Submodules to Enhance Scalability of Modular Multilevel Converters for High-Voltage Applications

Author

Na, Jongseo, Kim, Heejin, Kim, Sangmin, Kim, Chan-Ki, Mantooth, Homer Alan, and Hur, Kyeon

Abstract

This article presents a practical architecture for fully exploiting the scalability of modular multilevel converters (MMC) by clustering the submodules (SMs) and interleaving these clusters. The proposed architecture enables scalability and flexibility for various high-voltage applications by dividing the computing tasks of an arm controller among each cluster control iteration, interleaving the output voltages of each cluster to maintain the desired voltage quality without structural changes, and balancing the cluster energy to ensure stable control performance. One noteworthy aspect of the proposed architecture is its implementation of distributed cluster control using a single controller, which eliminates the need for inter-controller synchronization and utilizes hardware resources cost-effectively. The article provides design guidelines for clustering the SMs through theoretical analysis and numerical examples. The validity and performance of the proposed interleaving scheme for the clusters of SMs are demonstrated through hardware-in-the-loop simulation (HILS).

Published
2024
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8. Model-Based Detection Scheme for Spoofed Sensor Data in Grid-Connected Inverters

Author

Zhang, Jinan, Greidanus, Mateo D. Roig, Mazumder, Sudip K., Ye, Jin, Song, Wenzhan, and Mantooth, Homer Alan

Abstract

In this article, a novel method to detect spoofed sensor data (SSD) for grid-connected inverters is proposed. First, a Kalman filter is used to estimate the inverter status in the proposed method. Then, the impact of SSD on the residual between estimation and control reference is analyzed. By leveraging the standard error of residual, an adaptive cumulative sum (CUSUM) chart is developed to achieve fast SSD detection and improve robustness. In addition, the proposed SSD detection method is verified by the hardware experiment. A comparative experiment with a conventional method also demonstrates the rapidity and robustness of the proposed method. Finally, the performance of the proposed method under different noise covariance matrices is analyzed. Comprehensive analysis shows that the proposed method meets the detection requirement in IEEE 1547 Standard.

Published
2024
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9. A Switching Oscillation Suppression Method With Clamping Function and Quantitative Design for SiC MOSFETs

Author

Chen, Jian, Song, Wensheng, Xu, Jianping, Yue, Hao, Luo, Quanming, and Mantooth, Homer Alan

Abstract

SiC mosfets offer significant benefits for power electronics applications due to their material properties, including increased switching speeds, reduced switching losses, and improved power density. However, these benefits can also result in severe switching oscillation and electromagnetic interference in SiC mosfets, which can cause device breakdown or damage. In this article, an oscillation suppression method with clamping function and quantitative design is presented, which not only effectively clamps the drain-source voltage overshoot but also does not reduce the switching speed and increase the switching loss. First, the clamping circuit based on a double-pulse circuit is proposed and its operating principle is described. Then, in order to achieve full suppression of oscillation below the clamping capacitor voltage, the high-frequency equivalent circuit in the oscillation stage is derived and the snubber parameters are further quantitatively designed. Finally, an experimental platform is developed to verify the effectiveness of the proposed method. The experimental results show that the proposed method can effectively clamp the overshoot and suppress the switching oscillations, which will significantly improve the device application reliability.

Published
2024
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12. A Review of Cyber–Physical Security for Photovoltaic Systems

Author

Ye, Jin, primary, Giani, Annarita, additional, Elasser, Ahmed, additional, Mazumder, Sudip K., additional, Farnell, Chris, additional, Mantooth, Homer Alan, additional, Kim, Taesic, additional, Liu, Jianzhe, additional, Chen, Bo, additional, Seo, Gab-Su, additional, Song, Wenzhan, additional, Greidanus, Mateo D. Roig, additional, Sahoo, Subham, additional, Blaabjerg, Frede, additional, Zhang, Jinan, additional, Guo, Lulu, additional, Ahn, Bohyun, additional, Shadmand, Mohammad B., additional, Gajanur, Nanditha R., additional, and Abbaszada, Mohammad Ali, additional

Published
2022
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16. Transient electrothermal simulation of power semiconductor devices

Author

Bin Du, Hudgins, Jerry L., Santi, Enrico, Bryant, Angus T., Palmer, Patrick R., and Mantooth, Homer Alan

Subjects
Fourier transformations -- Usage, Bipolar transistors -- Properties, Transients (Dynamics) -- Research, Diodes -- Properties, Power semiconductor devices -- Properties, Business, Electronics, Electronics and electrical industries
Published
2010

24. 555-Timer and Comparators Operational at 500 degrees C

Author

Shakir, Muhammad, Hou, Shuoben, Metreveli, Alex, Rashid, Arman Ur, Mantooth, Homer Alan, Zetterling, Carl-Mikael, Shakir, Muhammad, Hou, Shuoben, Metreveli, Alex, Rashid, Arman Ur, Mantooth, Homer Alan, and Zetterling, Carl-Mikael

Abstract

This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 degrees C-500 degrees C. Nonmonotonic temperature dependence was observed for the 555-timer IC frequency, rise time, fall-time, and power dissipation., QC 20190924

Published
2019
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25. 555-Timer IC Operational at 500 °C

Author

Shakir, Muhammad, Hou, Shuoben, Metreveli, Alexey, Rashid, Masud-Ur, Mantooth, Homer Alan, Zetterling, Carl-Mikael, Shakir, Muhammad, Hou, Shuoben, Metreveli, Alexey, Rashid, Masud-Ur, Mantooth, Homer Alan, and Zetterling, Carl-Mikael

Abstract

This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. The paper demonstrates the 555-timer ICs characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 to 500°C. Nonmonotonictemperature dependence was observed for the 555-timer IC frequency, rise-time, fall-time, and power dissipation., QC 20190523

Published
2019

32. A 500 ?C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology.

Author

Hussain, Muhammad Waqar, Elahipanah, Hossein, Zumbro, John E., Schroder, Stephan, Rodriguez, Saul, Malm, Bengt Gunnar, Mantooth, Homer Alan, and Rusu, Ana

Subjects
SILICON carbide, RADIO frequency
Abstract

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 ?C. The conversion gain is 15 dB at 25 ?C, which decreases to 4.7 dB at 500 ?C. The input 1-dB compression point is 1 dBm at 25 ?C and ?2.5 dBm at 500 ?C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 ?C. [ABSTRACT FROM PUBLISHER]

Published
2018
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35. A UVLO Circuit in SiC Compatible With Power MOSFET Integration

Author

Glover, Michael D., primary, Shepherd, Paul, additional, Francis, A. Matt, additional, Mudholkar, Mihir, additional, Mantooth, Homer Alan, additional, Ericson, Milton Nance, additional, Frank, S. Shane, additional, Britton, Charles L., additional, Marlino, Laura D., additional, McNutt, Ty R., additional, Barkley, Adam, additional, Whitaker, Bret, additional, and Lostetter, Alexander B., additional

Published
2014
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37. Transient Electrothermal Simulation of Power Semiconductor Devices.

Author

Du, Bin, Hudgins, Jerry L., Santi, Enrico, Bryant, Angus T., Palmer, Patrick R., and Mantooth, Homer Alan

Subjects
ELECTRIC transients, POWER semiconductors, SEMICONDUCTOR switches, INSULATED gate bipolar transistors, ELECTRIC power distribution, SIMULATION methods & models, FOURIER analysis
Abstract

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature. [ABSTRACT FROM AUTHOR]

Published
2010
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