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Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of $n=1.65$). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity-modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.

We report the first-ever experimental observation of backward stimulated Brillouin scattering (SBS) in thin-film lithium niobate (TFLN) waveguides. The peak Brillouin gain coefficient of the z-cut LN waveguide with a crystal rotation angle of 20$^{\circ}$ is as high as 84.9m$^{-1}$W$^{-1}$, facilitated by surface acoustic waves (SAW) at 8.06GHz.

Surface acoustic wave (SAW) devices are ubiquitously used for signal processing and filtering, as well as mechanical, chemical and biological sensing, and show promise as quantum transducers. However, nowadays most SAWs are excited and driven via electromechanical coupling and interdigital transducers (IDTs), limiting operation bandwidth and flexibility. Novel ways to coherently excite and detect SAWs all-optically interfaced with photonic integrated circuits are yet elusive. Backward Stimulated Brillouin scattering (SBS) provides strong coherent interactions between optical and acoustic waves in chip-scale waveguides, however, demonstrations have been limited to single longitudinal waves in the waveguide core. Here, we numerically model and experimentally demonstrate surface acoustic wave stimulated Brillouin scattering (SAW-SBS) on a photonic chip. We designed and fabricated tailored waveguides made out of GeAsSe glass that show good overlap between SAWs at 3.81 GHz and guided optical modes, without requiring a top cladding. We measure a 225 W$^{-1}$m$^{-1}$ Brillouin gain coefficient of the surface acoustic resonance and linewidth narrowing to 40 MHz. Experimentally accessing this new regime of stimulated Brillouin scattering opens the door for novel on-chip sensing and signal processing applications, strong Brillouin interactions in materials that do not provide sufficient acoustic guidance in the waveguide core as well as excitation of surface acoustic waves in non-piezoelectric materials., Comment: 7 pages, 4 figures

Brillouin enhanced four wave mixing in the form of a Brillouin dynamic grating (BDG) enables a uniquely tunable filter, whose properties can be tuned by purely optical means. This makes the BDG a valuable tool in microwave photonics (MWP). BDGs have been studied extensively in fibers, but the only observation in an integrated platform required exotic materials. Unlocking BDG in a standard and mature platform will enable its integration into large-scale circuits. Here we demonstrate the first observation of a BDG in a silicon nitride (Si$_3$N$_4$) waveguide. We also present a new, optimized design, which will enhance the BDG response of the waveguide, unlocking a path to large-scale integration into MWP circuits.

Stimulated Brillouin scattering (SBS), a coherent nonlinear effect coupling acoustics and optics, can be used in a wide range of applications such as Brillouin lasers and tunable narrowband RF filtering. Wide adoption of such technologies however, would need a balance of strong Brillouin interaction and low optical loss in a structure compatible with large scale fabrication. Achieving these characteristics in scalable platforms such as silicon and silicon nitride remains a challenge. Here, we investigate a scalable Brillouin platform combining low loss Si$_3$N$_4$ and tellurium oxide (TeO$_2$) exhibiting strong Brillouin response and enhanced acoustic confinement. In this platform we measure a Brillouin gain coefficient of 8.5~m$^{-1}$W$^{-1}$, exhibiting a twenty fold improvement over the largest previously reported Brillouin gain in a Si$_3$N$_4$ platform. Further, we demonstrate cladding engineering to control the strength of the Brillouin interaction. We utilized the Brillouin gain and loss resonances in this waveguide for an RF photonic filter with more than 15 dB rejection and 250 MHz linewidth. Finally, we present a pathway by geometric optimization and cladding engineering to a further enhancement of the gain coefficient to 155~m$^{-1}$W$^{-1}$, a potential 400 times increase in the Brillouin gain coefficient.

Photonic integration, advanced functionality, reconfigurability, and high RF performance are key features in integrated microwave photonic systems that are still difficult to achieve simultaneously. In this work, we demonstrate an integrated microwave photonic circuit that can be reconfigured for two distinct RF functions, namely, a tunable notch filter and a phase shifter. We achieved $>$50dB high-extinction notch filtering over 6-16 GHz and 2$\pi$ continuously tunable phase shifting over 12-20 GHz frequencies. At the same time, we implemented an on-chip linearization technique to achieve a spurious-free dynamic range of more than 120$\rm{dB}\cdot \rm{Hz}^{4/5}$ for both functions. Our work combines multi-functionality and linearization in one photonic integrated circuit, and paves the way to reconfigurable RF photonic front-ends with very high performance.

Nonlinear optical effects including stimulated Brillouin scattering (SBS) and four-wave mixing (FWM) play an important role in microwave photonics, optical frequency combs, and quantum photonics. Harnessing SBS and FWM in a low-loss and versatile integrated platform would open the path to building large-scale Brillouin/Kerr-based photonic integrated circuits. In this letter, we investigate the Brillouin and Kerr properties of a low-index (n=1.513 @ 1550 nm) silicon oxynitride (SiON) platform. We observed, for the first time, backward SBS in SiON waveguides with a Brillouin gain coefficient of 0.3$\rm m^{-1}W^{-1}$, which can potentially be increased to 0.95$\rm m^{-1}W^{-1}$ by just tailoring the waveguide cross-section. We also performed FWM experiments in SiON rings and obtained the nonlinear parameter $\gamma$, of 0.02 $\rm m^{-1}W^{-1}$. Our results point to a low-loss and low-index photonic integrated platform that is both Brillouin and Kerr active.

Fully integrated supercontinuum sources on-chip are critical to enabling applications such as portable and mechanically-stable medical imaging devices, chemical sensing and LiDAR. However, the low-efficiency of current supercontinuum generation schemes prevent full on-chip integration. In this letter, we present a scheme where the input energy requirements for integrated supercontinuum generation is drastically lowered by orders of magnitude, for bandwidth generation of the order of 500 to 1000 nm. Through sign-alternating the dispersion in a CMOS compatible silicon nitride waveguide, we achieve an efficiency enhancement by factors reaching 3800. We show that the pulse energy requirement for large bandwidth supercontinuum generation at high spectral energy (e.g., 1/e level) is lowered from nanojoules to 6 picojoules. The lowered pulse energy requirements enables that chip-integrated laser sources, such as mode-locked heterogeneously or hybrid integrated diode lasers, can be used as a pump source, enabling fully integrated on-chip high-bandwidth supercontinuum sources.

Microwave photonics (MWP) has adopted a number of important concepts and technologies over the recent pasts, including photonic integration, versatile programmability, and techniques for enhancing key radio frequency performance metrics such as the noise figure and the dynamic range. However, to date, these aspects have not been achieved simultaneously in a single circuit. Here, we demonstrate, for the first time, a multi-functional integrated microwave photonic circuit that enables on-chip programmable filtering functions while achieving record-high key radio frequency metrics of >120 dB.Hz dynamic range and 15 dB of noise figure that are previously unreachable. We unlock this unique feature by versatile complex spectrum tailoring using an all integrated modulation transformer and a double injection ring resonator as a multi-function optical filtering component. This work breaks the conventional and fragmented approach of integration, functionality and performance that currently prevents the adoption of integrated MWP systems in real applications., Comment: 19 pages, 11 figures

Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless communications, precision sensing, and quantum information processing. While SBS has recently been studied extensively in integrated waveguides, many implementations rely on complicated fabrication schemes, using suspended waveguides, or non-standard materials such as As$_2$S$_3$. The absence of SBS in standard and mature fabrication platforms prevents large-scale circuit integration and severely limits the potential of this technology. Notably, SBS in standard silicon nitride integration platform is currently rendered out of reach due to the lack of acoustic guiding and the infinitesimal photo-elastic response of the material. In this paper, we experimentally demonstrate advanced control of backward SBS in multilayer silicon nitride waveguides. By optimizing the separation between two silicon nitride layers, we unlock gigahertz acoustic waveguiding in this platform for the first time, leading up to 15 $\times$ higher SBS gain coefficient than previously possible in silicon nitride waveguides. Using the same principle, we experimentally demonstrate on-demand inhibition of SBS by preventing acoustic guiding in the waveguide platform. We utilize the enhanced SBS gain to demonstrate a microwave photonic notch filter with high rejection (30 dB). We accomplish this in a low-loss, standard, and versatile silicon nitride integration platform without the need of suspending the SBS-active waveguide or hybrid integration with other materials., Comment: 21 pages, 5 figures

Optical modulation plays arguably the utmost important role in microwave photonic (MWP) systems. Precise synthesis of modulated optical spectra dictates virtually all aspects of MWP system quality including loss, noise figure, linearity, and the types of functionality that can be executed. But for such a critical function, the versatility to generate and transform analog optical modulation is severely lacking, blocking the pathways to truly unique MWP functions including ultra-linear links and low-loss high rejection filters. Here we demonstrate versatile RF photonic spectrum synthesis in an all-integrated silicon photonic circuit, enabling electrically-tailorable universal analog modulation transformation. We show a series of unprecedented RF filtering experiments through monolithic integration of the spectrum-synthesis circuit with a network of reconfigurable ring resonators.

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser., Comment: 25 pages, 16 figures

Recent advances in photonic integration have propelled microwave photonic technologies to new heights. The ability to interface hybrid material platforms to enhance light-matter interactions has led to the developments of ultra-small and high-bandwidth electro-optic modulators, frequency synthesizers with the lowest noise, and chip signal processors with orders-of-magnitude enhanced spectral resolution. On the other hand, the maturity of high-volume semiconductor processing has finally enabled the complete integration of light sources, modulators, and detectors in a single microwave photonic processor chip and has ushered the creation of a complex signal processor with multi-functionality and reconfigurability similar to their electronic counterparts. Here we review these recent advances and discuss the impact of these new frontiers for short and long term applications in communications and information processing. We also take a look at the future perspectives in the intersection of integrated microwave photonics with other fields including quantum and neuromorphic photonics., Comment: 21 pages, 6 figures

Modern fiber-optic coherent communications employ advanced spectrally-efficient modulation formats that require sophisticated narrow linewidth local oscillators (LOs) and complex digital signal processing (DSP). Here, we establish a novel approach to carrier recovery harnessing large-gain stimulated Brillouin scattering (SBS) on a photonic chip for up to 116.82 Gbit/sec self-coherent optical signals, eliminating the need for a separate LO. In contrast to SBS processing on-fiber, our solution provides phase and polarization stability while the narrow SBS linewidth allows for a record-breaking small guardband of ~265 MHz, resulting in higher spectral-efficiency than benchmark self-coherent schemes. This approach reveals comparable performance to state-of-the-art coherent optical receivers without requiring advanced DSP. Our demonstration develops a low-noise and frequency-preserving filter that synchronously regenerates a low-power narrowband optical tone that could relax the requirements on very-high-order modulation signaling and be useful in long-baseline interferometry for precision optical timing or reconstructing a reference tone for quantum-state measurements., Comment: Part of this work has been presented as a postdealine paper at CLEO Pacific-Rim'2017 and OSA Optica

We report a silicon nitride RF photonic notch filter with unprecedented performance including 8 dB of RF gain, record-low noise figure of 15.6 dB, and spurious-free dynamic range of 116 dB while achieving an ultra-deep rejection of beyond 50 dB in the stopbands., Comment: Presented as a post deadline paper at CLEO Pacific Rim 2017

We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

Instantaneous frequency measurement (IFM) of microwave signals is a fundamental functionality for applications ranging from electronic warfare to biomedical technology. Photonic techniques, and nonlinear optical interactions in particular, have the potential to broaden the frequency measurement range beyond the limits of electronic IFM systems. The key lies in efficiently harnessing optical mixing in an integrated nonlinear platform, with low losses. In this work, we exploit the low loss of a 35 cm long, thick silicon waveguide, to efficiently harness Kerr nonlinearity, and demonstrate the first on-chip four-wave mixing (FWM) based IFM system. We achieve a large 40 GHz measurement bandwidth and record-low measurement error. Finally, we discuss the future prospect of integrating the whole IFM system on a silicon chip to enable the first reconfigurable, broadband IFM receiver with low-latency., Comment: 13 pages, 7 figures

Highly selective and reconfigurable microwave filters are of great importance in radio-frequency signal processing. Microwave photonic (MWP) filters are of particular interest, as they offer flexible reconfiguration and an order of magnitude higher frequency tuning range than electronic filters. However, all MWP filters to date have been limited by trade-offs between key parameters such as tuning range, resolution, and suppression. This problem is exacerbated in the case of integrated MWP filters, blocking the path to compact, high performance filters. Here we show the first chip-based MWP band-stop filter with ultra-high suppression, high resolution in the MHz range, and 0-30 GHz frequency tuning. This record performance was achieved using an ultra-low Brillouin gain from a compact photonic chip and a novel approach of optical resonance-assisted RF signal cancellation. The results point to new ways of creating energy-efficient and reconfigurable integrated MWP signal processors for wireless communications and defence applications., Comment: 16 pages, 5 figures

Harnessing nonlinear optical effects in a photonic chip scale has been proven useful for a number of key applications in optical communications. Microwave photonics can also benefit from the adoption of such a technology, creating a new concept of nonlinear integrated microwave photonics. Here, we discuss the potential of on-chip nonlinear processing towards the creation of robust and multifunctional microwave photonic (MWP) processors. We also highlight key recent results in the field, including frequency agile MWP filters and ultra-wideband signal generators., Comment: 5 pages, 3 figures, invited paper at 2013 IEEE Topical Meeting on Microwave Photonics

We report a simple technique in microwave photonic (MWP) signal processing that allows the use of an optical filter with a shallow notch to exhibit a microwave notch filter with anomalously high rejection level. We implement this technique using a low-loss, tunable Si3N4 optical ring resonator as the optical filter, and achieved an MWP notch filter with an ultra-high peak rejection > 60 dB, a tunable high resolution bandwidth of 247-840 MHz, and notch frequency tuning of 2-8 GHz. To our knowledge, this is a record combined peak rejection and resolution for an integrated MWP filter., Comment: 8 pages, 5 figures

We report a novel class microwave photonic (MWP) notch filter with a very narrow isolation bandwidth (10 MHz), an ultrahigh stopband rejection (> 60 dB), a wide frequency tuning (1-30 GHz), and flexible bandwidth reconfigurability (10-65 MHz). This record performance is enabled by a new concept of sidebands amplitude and phase controls using an electro-optic modulator and an optical filter. This new concept enables energy efficient operation in active MWP notch filters, and opens up the pathway to enable low-power nanophotonic devices as high performance RF filters., Comment: 4 pages, 5 figures

Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the reduction of size, weight, cost and power consumption. This article reviews the recent advances in this emerging field which is dubbed as integrated microwave photonics. Key integrated MWP technologies are reviewed and the prospective of the field is discussed., Comment: 30 pages, 23 figures, to appear in Laser & Photonics Reviews