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This paper describes the development and evaluation of an online ethical review system to enable smooth application for ethical review of research. This system was designed using three policies.1） This system automated most of the routine office tasks of ethical review such as accepting an application and contacting users.2） This system centralized information relating to ethical review.3） This system limited presented information. For example, student users were not shown the reviewer’s menu or review items not necessary for them. Undergraduates, graduates, and faculty members completed a questionnaire, wherein the user was asked about the user friendliness of this system by means of the Questionnaire for Evaluating Web Usability (Nakagawa, Suda, Zempo, & Matsumoto, 2001）. The results showed that this system was almost as user friendly as a general website.

The system-making and the base-making that support the activity is becoming an urgent, important subject and also they secure the chance of sports activities that people can enjoy playing sports through their life. The purpose of this study is to clarify the issue through the actual conditions of free access and utilization for physical education facilities, and to examine the strategy of using it effectively as a place for playing sports among the locals. To understand the current state of the region, this study referred to the material of Amagasaki City and Nishinomiya City. It showed that many physical education facilities were open to the public in both cities. However, it was not able to satisfy local peoples’needs enough though facilities were open. One of the reasons is a problem of the adjustment of the facilities’use. After understanding the current state of the facilities’use, it is necessary to review the mechanism of the management so that the facilities are available to more people. It is necessary to change people’mind on the use of facilities ―“joint utilization”, and not having the users merely regard the free access to physical education facilities as“ opening up the place”

The purpose of this study is to clarify the concept of Guidance and Support on community sports and to specify the directionality of organization and support for achievement of the sports society through life. The authors have stressed that it is necessary for achievement of the society for longlife sports，to cooperate with other groups and to construct a consistent support system. This study is also to explore the condition of community sports club management through analyzing the Japan Junior Sports Club Association that has established as junior sports club of community in Japan. The Japan Junior Sports Club Association develops club management independently. It has left great results and accumulated the know-how of the activity program and club management. However， it is reguired to be a self-organization so that the Japan Junior Sports Club Association may develop more as community sports club. These results suggest that finding the solution of the acknowledment obstructon factor，especially related to the problem of receipt，leads to effective support for the club.

This paper describes a newly developed GaAs metal semiconductor field-effect transistor (MESFET)-termed p-pocket MESFET-for use as a linear power amplifier in personal handy-phone systems. Conventional buried p-layer technology, the primary technology for microwave GaAs power MESFET's, has a drawback of low power efficiency for linear power applications. The low power efficiency of the buried p-layer MESFET is ascribed to the I-V kink which is caused by holes collected in the buried p-layer under the channel. In order to overcome this problem, we have developed the self-aligned gate p-pocket MESFET which incorporates p-layers not under the channel but under the source and drain regions. This new MESFET exhibited high transconductance and uniform threshold voltage. The problematic I-V kink was successfully removed and an improved power efficiency of 48% was achieved under bias conditions, which resulted in adjacent channel leakage power at 600-kHz offset as low as -59 dBc for 1.9-GHz /spl pi//4-shift QPSK modulated input.

An improved symmetric GaAs MESFET structure with a lightly doped deep source/drain is proposed for application to power amplifiers in mobile communication terminals. With lightly doped deep drain, the impact ionization falls as the electron current expands and the current density decreases. Thus, the breakdown voltage rises, while a high transconductance and low parasitic resistance are maintained. Furthermore, the symmetric structure suits for mass production because of its fabrication process without mask alignment precision. This structure was fabricated using the WNx/W self-aligned gate process, and DC and RF characteristics were evaluated. The power-added efficiency was 37% at an adjacent channel leakage power of -55 dBc for 37%-shift QPSK modulated input signals at 1.9 GHz with a single positive supply voltage of 3 V. The efficiency was also high at a lower supply voltage: 34% at 1.2 V.

A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System in the 1.9 GHz band. In combination with MESFETs with low on-resistance and high breakdown voltage, the resonant-type switch IC utilizes stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.

A monolithic GaAs power amplifier IC using refractory WN/sub xW self-aligned gate power MESFETs has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system. The power amplifier operates with high efficiency and low distortion with a single low voltage supply of 2.7-3.0 V, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.7 dBm and a high power-added efficiency of 24.2% were attained at 3 V for 1.9-GHz /spl pi4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power was -58 dBc at 600 kHz apart. >

A single 2-V operation RF front-end MMIC has been developed using three kinds of self-aligned gate MESFETs. Its transmitter block of a power amplifier with an antenna switch exhibited a power gain of 28.9 dB and a high power-added efficiency of 27.0% at 20.5-dBm output power. The receiver block of a low-noise amplifier with the antenna switch exhibits a noise figure of 3.4 dB and a gain of 11.1 dB.

A low-voltage GaAs power amplifier for 1.9-GHz digital mobile communication applications such as PHS handsets has been developed, using refractory WNx/W self-aligned gate MESFETs with p-pocket layers. This power amplifier operates with a single low 2-V supply, and an output power of 21.0 dBm, a power gain of 22.3 dB, a low dissipated current of 162.9 mA and a high power-added efficiency of 38.5% were attained with a low 600-kHz adjacent channel leakage power of -58.0 dBc for 1.9-GHz /spl pi//4-shifted QPSK modulated input.

A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.

The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WN x /W self-aligned GaAs metal-semiconductor field-effect transistor (MESFET). This MESFET comprises an ion-implanted channel and an undoped GaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising monolithic microwave integrated circuits (MMICs) for L-band digital mobile communication systems.

We have developed a refractory WN x /W self-aligned gate GaAs power metal-semiconductor field-effect transistor (MESFET) for use in L-band digital mobile communication systems. This power MESFET operates with high efficiency and low distortion at a gate bias of 0 V and a low drain bias of 2.7 V, because of its small drain knee voltage, high transconductance and sufficient breakdown voltage. This power MESFET is quite promising for a highly efficient linear power amplifier IC operating with a single low-voltage supply. Good output characteristics of the power MESFET with 1 mm gate width were attained for π/4-shifted quadrature phase shift keying (QPSK) modulated input signals in the 1.9-GHz band, such as an output power of 18.4 dBm, a power gain of 19.0 dB and a high power-added efficiency of 26.4% when a sufficiently low adjacent channel leakage power of -58 dBc was obtained.

WNX –Schottky diodes on semiconductor–insulator–semiconductor‐like n‐GaAs/undoped‐AlGaAs/n‐GaAs heterostructures have been fabricated at various annealing temperatures. The barrier characteristics are evaluated and compared with those of WNX –n‐GaAs Schottky contacts. At lower annealing temperatures the metal–insulator–semiconductor (MIS) like diodes exhibit superior barrier heights. However, at higher annealing temperatures (TA≥800 °C), both the MIS and WNX –n‐GaAs Schottky diodes almost have equivalent barrier heights. The ideality factors of the MIS like diodes are worse over the whole temperature range. Thicker undoped AlGaAs layers result in increased barrier heights at lower annealing temperatures (TA≤800 °C).

Properties of reactively sputtered WNx films on a GaAs substrate have been investigated by electrical and physical analyses. WNx films were deposited from a pure W target by using three types of sputtering systems: (1) Magnetron sputtering system equipped with rf and dc mode; (2) S‐gun sputtering system; (3) rf diode sputtering system. The composition of WNx films was easily and reproducibly controlled by changing the N2 content in Ar–N2 mixed ambient gas. The WNx–GaAs system was both electrically and metallurgically stable even after high‐temperature annealing of up to 800 °C. The Schottky barrier height to n‐type GaAs was more than 0.8 V, which is the highest value obtained so far among any other refractory metals. Self‐aligned GaAs MESFET’s were successfully fabricated using a WNx gate. The transconductance was typically 150 mS/mm for 1.5 μm gate length.