581 results on '"McMorrow, Dale"'
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2. Characteristics and Applications of Pulsed Laser-Induced Single-Event Effects
3. Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA
4. Single-Event Transient Study of Ga₂O₃ Rectifiers
5. The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
6. Status Update on the Pulsed Laser Single Event Effects SEE Test Guideline Desk Reference - A NASA-NRL Collaboration
7. Status Update on the Pulsed Laser Single Event Effects SEE Test Guideline Desk Reference - A NASA-NRL Collaboration
8. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
9. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
10. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier
11. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
12. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET
13. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement
14. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 1: Metrics for Assessing Response Agreement
15. SET-Induced Drop-out and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
16. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 2: Accurately Determining Laser-Equivalent LET
17. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
18. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
19. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low Noise Amplifier
20. Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology
21. SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing
22. Fundamentals of the Pulsed Laser Technique for Single-Event Upset Testing
23. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
24. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs
25. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
26. Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
27. Dynamics and Coherent Control of Condensed Phase Vibrational Coherences
28. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
29. Proton-Transfer Spectroscopy of 3-hydroxyflavone in an Isolated-Site Crystal Matrix
30. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
31. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
32. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
33. A generalized model for single event transient propagation in phase-locked loops
34. Gate bias dependence of single event charge collection in AlSb/InAs HEMTs
35. Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
36. Effects of ionizing radiation on digital single event transients in an 180-nm fully depleted SOI process
37. TPA laser and heavy-ion SEE testing: complementary technques for SDRAM single-event evaluation
38. Effect of total ionizing dose on a bulk 130 nm ring oscillator operating at ultra-low power
39. The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices
40. Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies
41. Heavy ion microbeam- and broadbeam-induced transients in SiGe HBTs
42. Device-physics-based analytical model for single-event transients in SOI CMOS logic
43. Simulation of Pulsed Laser-Induced Testing in Microelectronic Devices
44. A probabilistic analysis technique applied to a radiation-hardened-by-design voltage-controlled oscillator for mixed-signal phase-locked loops
45. Pulsed laser single-event effects in highly scaled CMOS technologies in the presence of dense metal coverage
46. The effects of low dose-rate ionizing radiation on the shapes of transients in the LM 124 operational amplifier
47. Laser verification of on-chip charge-collection measurement circuit
48. Laser-induced current transients in silicon-germanium HBTs
49. Waveform observation of digital single-event transients employing monitoring transistor technique
50. Generation and propagation of single event transients in 0.18-[micro]m fully depleted SOI
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