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The efficiency of combinatorial methodology applied to [Ta.sub.1-x] [Al.sub.x] [N.sub.y] alloys as metal gates on Hf [O.sub.2] for complementary metal-oxide-semiconductor applications is demonstrated. Results show that the small values of fixed oxide charges in the Si[O.sub.2]/Si interface when annealed at 900 degree centigrade makes [Ta.sub.1-x] [Al.sub.x] [N.sub.y] a potential replacement for polysilicon for p-channel metal-oxide-semiconductor applications.

The application of the plasma-assisted atomic layer deposition of the TiN/[Al.sub.2][O.sub.3] thin films for metal-oxide-semiconductor capacitor applications are discussed. The devices are shown to be extremely efficient and effective, as it can easily sustain high electric fields.

Inductor structures are prepared by using [micro]m thick copper metallization and two levels of CoZrTa as part of a 90 nm complementary metal-oxide semiconductor (CMOS) process. The studies have shown that the inductors with thick copper and thicker magnetic films have resistance as low as 0.04 [omega] and quality factors up to 8 at frequencies as low as 40 MHz.