1. Novel Designed SiC Devices for High Power and High Efficiency Systems.
- Author
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Mikamura, Yasuki, Hiratsuka, Kenji, Tsuno, Takashi, Michikoshi, Hisato, Tanaka, So, Masuda, Takeyoshi, Wada, Keiji, Horii, Taku, Genba, Jun, Hiyoshi, Toru, and Sekiguchi, Takeshi
- Subjects
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SILICON carbide , *METAL oxide semiconductor field-effect transistors , *EPITAXIAL layers , *SUPERCONDUCTING epitaxial layers , *ELECTRIC currents , *ELECTRIC fields , *ELECTRIC field strength - Abstract
Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interface state density (
D\mathrm {\mathbf {it}} ) of 3\times 10^11 \mathrmcm^-2~\mathrmeV^-1 , which causes the high channel mobility of 80 \mathrmcm^2~\mathrmV^-1~\mathrms^-1 results in very low channel resistance. The buried p+ regions located close to the trench bottom can effectively alleviate the electric field crowding without the significant sacrifice of the increase of the resistance. The low specific ON-state resistance of 3.5 m \Omega ~\mathrmcm^\mathrm \mathbf 2 with sufficiently high blocking voltage of 1700 V is obtained. The other is the double implanted MOSFET with the carefully designed junction termination extension and field-limiting rings for the edge termination region, and the additional doping into the junction FET region. With a high-quality and high-uniformity epitaxial layer, 6 mm $\times 6$ mm devices are fabricated. The well balanced specific ON-state resistance of 14.2 m \Omega ~\mathrm{cm}^{2} and the blocking voltage of 3850 V are obtained for 3300 V application. [ABSTRACT FROM AUTHOR] - Published
- 2015
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