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Your search keyword '"Micolich, A.P."' showing total 127 results
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127 results on '"Micolich, A.P."'

23. An improved process for fabricating high-mobility organic molecular crystal field-effect transistors

Author

Micolich, A.P., Bell, L.L.;, and Hamilton, A.R.

Subjects
Field-effect transistors -- Design and construction, Elastomers -- Analysis, Dimethylpolysiloxane -- Electric properties, Physics
Abstract

An improved process is described for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. The electrical mobilities of the order of 10 [cm.sup.2]/Vs is achieved despite the altered design, rougher polydimethylsiloxane (PDMS) surface and lamination and measurement of the device in air.

Published
2007

24. Fabrication of induced two-dimensional hole systems on (311)A GaAs

Author

Clarke, W.R., Micolich, A.P., Hamilton, A.R., Simmons, M.Y., Muraki, K., and Hirayama, Y.

Subjects
Gallium arsenide -- Chemical properties, Holes (Electron deficiencies) -- Research, Physics
Abstract

A method for fabricating induced two-dimensional hole devices in (311)A GaAs is demonstrated. This method uses a metallic p(super +)-GaAs capping layer thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs/GaAs interface.

Published
2006

25. Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry

Author

Carrad, James Damon, Mostert, A.B., Ullah, A. R., Burke, A.M., Tan, H.H., Jagadish, C., Jeppesen, Peter Krogstrup, Nygård, Jesper, Meredith, P., Micolich, A.P, Carrad, James Damon, Mostert, A.B., Ullah, A. R., Burke, A.M., Tan, H.H., Jagadish, C., Jeppesen, Peter Krogstrup, Nygård, Jesper, Meredith, P., and Micolich, A.P

Published
2017

26. Towards low-dimensional hole systems in Be-doped GaAs nanowires

Author

Ullah, A. R., Gluschke, J. G., Jeppesen, Peter Krogstrup, Sørensen, Claus Birger, Nygård, Jesper, Micolich, A.P., Ullah, A. R., Gluschke, J. G., Jeppesen, Peter Krogstrup, Sørensen, Claus Birger, Nygård, Jesper, and Micolich, A.P.

Abstract

GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate doping, with conduction freezing out at low temperature for lowly doped nanowires and inability to reach a clear off-state under gating for the highly doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio $\sim {10}^{4}$, and sub-threshold slope 50 mV/dec at $T=4$ K. Lastly, we made a device featuring a moderately doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantisation highlighting the potential for future quantum device studies in this material system

Published
2017

29. Impact of small-angle scattering on Ballistic transport in quantum dots

Author

See, A. M., Pilgrim, I., Scannell, Montgomery, R.D., Bruke, A. M., Aagesen, Martin, Lindelof, Poul Erik, Farrer, I., Ritchie, D.A., Taylor, R.P., Hamilton, A.R., Micolich, A.P., See, A. M., Pilgrim, I., Scannell, Montgomery, R.D., Bruke, A. M., Aagesen, Martin, Lindelof, Poul Erik, Farrer, I., Ritchie, D.A., Taylor, R.P., Hamilton, A.R., and Micolich, A.P.

Published
2012

47. Quantum transport in one-dimensional GaAs hole systems

Author

Hamilton, A.R., primary, Klochan, O., additional, Danneau, R., additional, Clarke, W.R., additional, Ho, L.H., additional, Micolich, A.P., additional, Simmons, M.Y., additional, Pepper, M., additional, Ritchie, D.A., additional, Muraki, K., additional, and Hirayama, Y., additional

Published
2008
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