38 results on '"Migitaka, M."'
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2. Erドープファイバにおける負性非線形吸収効果による全光形の光スイッチ
3. 光機能材料・デバイス
4. GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base
5. All-Optical Inverter Using Negative Nonlinear Absorption Effect
6. GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base.
7. Application of Si Field Emitter Arrays to a Lighting Element.
8. Study on Si integrated circuits operating up to 462/spl deg/C.
9. Negative light-modulation phenomenon in Er-doped YAG crystal using a modulated laser diode.
10. Silicon integrated injection logic operating above 350 degrees C.
11. Diffusion of Iron into GaAs from a Spin‐on Source
12. 800 MBIT/S 4-Phase PSK All Solid-State Repeater for Millimeter-Wave Radio Relay System.
13. Silicon hall-effect power IC's for brushless motors.
14. High Power Gunn Oscillator Diodes on Type-IIA Diamond Heat Sinks.
15. Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition
16. 20-GHz high-power GaAs DDR-IMPATT diodes with a p+-p-n-n+structure
17. Studies on an electron-beam mask-defect inspection system
18. Multiple-layer liquid phase epitaxy of GaAs by controlled supercooling of Ga solutions
19. 1:4 Demagnifying Electron Projection System
20. Effect of mechanical stress on the offset voltages of hall devices in Si IC
21. GaAs 50 GHz Schottky-barrier IMPATT diodes
22. An automated VLSI‐mask inspection system
23. Mass-production-type GaAs IMPATT diodes in s.h.f. band
24. Design consideration for hall devices in Si IC
25. Amplitude modulation of infrared light by GaAs p-n junctions
26. Millimeter-wave GaAs Schottky-barrier IMPATT diodes
27. 800 MBIT/S 4-Phase PSK All Solid-State Repeater for Millimeter-Wave Radio Relay System
28. Breakdown characteristics and light emissions observed on silicon alloyed pn junctions
29. Excellent silicon nitride films made by hybrid process and their application to a-Si TFTs
30. Negative Light-modulation Characteristics Derived From Negative Nonlinear Absorption Effect In Erbium Doped Fibers
31. Silicon nitride layers made by EBEP and their application to a-Si TFTs
32. Study on Si integrated circuits operating up to 462°C
33. Negative nonlinear absorption effect in erbium-doped fibers
34. Negative nonlinear absorption effect in erbium-doped fibers.
35. Negative Light-modulation Characteristics Derived From Negative Nonlinear Absorption Effect In Erbium Doped Fibers.
36. Silicon nitride layers made by EBEP and their application to a-Si TFTs.
37. Excellent silicon nitride films made by hybrid process and their application to a-Si TFTs.
38. Breakdown characteristics and light emissions observed on silicon alloyed p n junctions
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