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Your search keyword '"Mitrofanov, M. I."' showing total 39 results
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39 results on '"Mitrofanov, M. I."'

10. Quantum-Cascade Laser with Radiation Emission through a Textured Layer

Author

Babichev, A. V., Kolodeznyi, E. S., Gladyshev, A.G., Denisov, D. V., Voznyuk, G. V., Mitrofanov, M. I., Mikhailov, D. A., Chistyakov, D. V., Kuritsyn, D. I., Dudelev, V. V., Slipchenko, S. O., Lyutetskii, A. V., Evtikhiev, V. P., Karachinsky, L. Ya., Novikov, I. I., Morozov, S. V., Sokolovskii, G. S., Pikhtin, N. A., and Egorov, A. Yu.

Published
2022
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11. Surface Emitting Quantum-Cascade Ring Laser

Author

Babichev, A. V., Kolodeznyi, E. S., Gladyshev, A. G., Denisov, D. V., Voznyuk, G. V., Mitrofanov, M. I., Kharin, N. Yu., Panevin, V. Yu., Slipchenko, S. O., Lyutetskii, A. V., Evtikhiev, V. P., Karachinsky, L. Ya., Novikov, I. I., Pikhtin, N. A., and Egorov, A. Yu.

Published
2021
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27. On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As Heterostructure.

Author

Voznyuk, G. V., Grigorenko, I. N., Lila, A. S., Mitrofanov, M. I., Nikolaev, D. N., and Evtikhiev, V. P.

Subjects
FOCUSED ion beams, ION energy, ETCHING, ION beams
Abstract

The effect of ion energy in a focused ion beam in the range 12–30 keV on the formation depth of nonradiative recombination centers during etching of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As double heterostructure has been studied. It is shown that an increase in the ion energy leads to an increase in the concentration and propagation depth of radiation defects. It was found that during etching of focused ion beam with ion energies above 15 keV, the depth of formation of radiation defects exceeds 900 nm, which does not correspond to the calculations in the Stopping and Range of Ions in Matter. [ABSTRACT FROM AUTHOR]

Published
2023
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28. Enhancement of the Basal-plane Stacking Fault Emission in GaN Planar Nanowire Microcavity

Author

Girshova, E. I, Pozina, Galia, Belonovskii, A. V, Mitrofanov, M. I, Levitskii, I. V, Voznyuk, G. V., Evtikhiev, V. P., Rodin, S. N., Kaliteevski, M. A., Girshova, E. I, Pozina, Galia, Belonovskii, A. V, Mitrofanov, M. I, Levitskii, I. V, Voznyuk, G. V., Evtikhiev, V. P., Rodin, S. N., and Kaliteevski, M. A.

Abstract

We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure., Funding Agencies|Russian Science Foundation [21-12-00304]

Published
2022
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29. Surface Emitting Quantum-Cascade Ring Laser

Author

Babichev, A. V., primary, Kolodeznyi, E. S., additional, Gladyshev, A. G., additional, Denisov, D. V., additional, Voznyuk, G. V., additional, Mitrofanov, M. I., additional, Kharin, N. Yu., additional, Panevin, V. Yu., additional, Slipchenko, S. O., additional, Lyutetskii, A. V., additional, Evtikhiev, V. P., additional, Karachinsky, L. Ya., additional, Novikov, I. I., additional, Pikhtin, N. A., additional, and Egorov, A. Yu., additional

Published
2022
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30. On the effect of etching with a focused Ga-=SUP=-+-=/SUP=- ion beam in the energy range 12-30 keV on the luminescent properties of the Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As/GaAs/Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As heterostructure

Author

null Evtikhiev V. P., null Nikolaev D. N., null Mitrofanov M. I., null Lila A. S., null Grigorenko I. N., and null Voznyuk G. V.

Abstract

The effect of ion energy in a focused ion beam in the range 12-30 keV on the formation depth of nonradiative recombination centers during etching of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As double heterostructure has been studied. It is shown that an increase in the ion energy leads to an increase in the concentration and propagation depth of radiation defects. It was found that during etching of focused ion beam with ion energies above 15 keV, the depth of formation of radiation defects exceeds 900 nm, which does not correspond to the calculations in the Stopping and Range of Ions in Matter. Keywords: focused ion beam, radiation defects, photoluminescence, annealing, AlGaAs/GaAs.

Published
2022

31. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers

Author

null Breuer S., null Maximov M. V., null Gordeev N.Yu., null Evtikhiev V.P., null Kulagina M. M., null Voznyuk G. V., null Serin A. A., null Kornyshov G. O., null Mitrofanov M. I., and null Payusov A. S.

Abstract

We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser. Keywords: focused ion beam, semiconductor laser, optical waveguide, single mode lasing.

Published
2022

32. Subwave textured surfaces for the radiation coupling from the waveguide

Author

null Evtikhiev V. P., null Nikolaev V. V., null Mitrofanov M. I., null Grigorenko I. N., and null Voznyuk G. V.

Abstract

The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords: ion-beam etching, metasurface, textured surface, lithography, surface coupling of radiation.

Published
2022

38. FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy.

Author

Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Tatarinov, E. E., Rodin, S. N., Lundin, W. V., Evtikhiev, V. P., and Mizerov, M.N.

Subjects
*ION beam lithography, *SILICON nitride, *GALLIUM nitride, *FOCUSED ion beams, *EPITAXY, *CHEMICAL templates
Abstract

Abstract: Our study describes FIB technological aspects of preparing mask for GaN selective area epitaxy on Si3N4/GaN template. [ABSTRACT FROM AUTHOR]

Published
2018
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39. New Approach for Environmental Protection During Severe Accidents at Nuclear Power Plants

Author

Kulyukhin, S. A., primary, Mikheev, N. B., additional, Falkovskii, L. N., additional, Reshetov, L. A., additional, Zvetkova, M. Ya., additional, Osipov, V. P., additional, Yagodkin, I. V., additional, Skvortsov, S. S., additional, Berkovich, V. M., additional, Taranov, G. S., additional, Grigor’ev, M. M., additional, Noskov, A. A., additional, Mitrofanov, M. I., additional, and Meshkov, V. M., additional

Published
2009
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