1. High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method.
- Author
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Huang, Yan, Xiao, Junfeng, Tao, Ran, Liu, Zhi, Mo, Yiran, Yu, Xinxin, Cao, Zhengyi, Wu, Yun, Li, Zhonghui, Wang, Haolin, and Wang, Lei
- Subjects
HALL effect ,FIELD-effect transistors ,DIAMOND surfaces ,HYDROGEN evolution reactions ,DIELECTRICS ,DIAMONDS ,INDIUM gallium zinc oxide - Abstract
Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm
−1 , 161 mV/dec, and 106 , respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 V−1 s−1 in the hole density range of 2 − 6 × 1012 cm−2 , suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications. [ABSTRACT FROM AUTHOR]- Published
- 2023
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