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132 results on '"Moise, T."'

1. Application of a High-Resolution Melt Assay for Monitoring SARS-CoV-2 Variants in Burkina Faso and Kenya

Author

Greenland-Bews, Caitlin, primary, Shah, Sonal, additional, Achieng, Morine, additional, Badoum, Emilie S, additional, Bah, Yaya, additional, Barsosio, Hellen C, additional, Brazal-Monzó, Helena, additional, Canizales, Jennifer, additional, Drabko, Anna, additional, Fraser, Alice J, additional, Hannan, Luke, additional, Jarju, Sheikh J, additional, Kaboré, Jean-Moise T, additional, Kujabi, Mariama A, additional, Lesosky, Maia, additional, Manneh, Jarra, additional, Marlais, Tegwen, additional, Matthewman, Julian, additional, Nebie, Issa, additional, Onyango, Eric D, additional, Ouedraogo, Alphonse, additional, Otieno, Kephas, additional, Serme, Samuel S, additional, Sirima, Sodiomon B, additional, Soulama, Ben I, additional, Tangara, Brian, additional, Tiono, Alfred B, additional, Wu, William, additional, Sesay, Abdul Karim, additional, Adams, Emily R, additional, Drakeley, Chris, additional, ter Kuile, Feiko O, additional, Soulama, Issiaka, additional, Kariuki, Simon, additional, Allen, David J, additional, and Edwards, Thomas, additional

Published
2024
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4. Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

Author

Moise, T. S, Kao, Y. -C, Jovanovic, D, and Sotirelis, P

Subjects
Communications And Radar
Abstract

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Published
1995

5. Preparation of Pb(Zr,Ti)O[sub 3] thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory.

Author

Gilbert, S. R., Hunter, S., Ritchey, D., Chi, C., Taylor, D. V., Amano, J., Aggarwal, S., Moise, T. S., Sakoda, T., Summerfelt, S. R., Singh, K. K., Kazemi, C., Carl, D., and Bierman, B.

Subjects
THIN films, FERROELECTRIC crystals
Abstract

To realize the full potential of high density embedded ferroelectric memory, ferroelectric film thickness must be scaled below 100 nm to ensure that the capacitor operating voltage is compatible with advanced, low voltage logic transistors. In this article, we describe recent progress in the preparation of sub-100 nm thick Pb(Zr,Ti)O[sub 3] (PZT) thin films by metalorganic chemical vapor deposition on 200 mm wafers using an industry-standard processing platform. Within the full range of thicknesses investigated, 134-52 nm, capacitor operating voltage scales linearly with film thickness, yielding 71 nm thick films with a switched polarization (P[sub sw]) of ∼40 µC/cm² at 1.2 V. Below ∼50 nm, PZT surface roughness makes further thickness scaling difficult. With improved surface morphology, however, even lower operating voltages should be feasible. [ABSTRACT FROM AUTHOR]

Published
2003
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6. Experimental sensitivity analysis of pseudomorphic InGaAs/AlAs resonant-tunneling diodes.

Author

Moise, T. S., Kao, Y.-C., Katz, A. J., Broekaert, T. P. E., and Celii, F. G.

Subjects
*QUANTUM tunneling, *DIODES, *ALUMINUM, *ARSENIDES
Abstract

Focuses on a study which examined the relationship between intentional variations in the structural parameters of the pseudomorphic indium[sub0.53] gallium[sub0.47] arsenide/aluminum arsenide resonant tunneling diode and the measured current-voltage characteristics of the device. Barrier thickness and symmetry variations of aluminum arsenide; Impact of an increased spacer layer thickness; Sources of error in the value of the sensitivity parameters.

Published
1995
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7. Magnitude of the piezoelectric field in (111)B InyGa1-yAs strained-layer quantum wells.

Author

Moise, T. S., Guido, L. J., and Barker, R. C.

Subjects
*QUANTUM wells, *PIEZOELECTRICITY, *LATTICE dynamics, *HETEROSTRUCTURES, *PHOTOLUMINESCENCE
Abstract

Investigates the magnitude of the piezoelectric field in (111)B In[suby]Ga[sub1-y]As strained-layer quantum wells. Relationship between the magnitude of the piezoelectric field and the degree of lattice constant mismatch; Quantum well heterostructure design; Reason for the employment of low-temperature photoluminescence measurements.

Published
1993
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8. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells.

Author

Cartwright, A. N., McCallum, D. S., Boggess, Thomas F., Smirl, Arthur L., Moise, T. S., Guido, L. J., Barker, R. C., and Wherrett, B. S.

Subjects
PIEZOELECTRICITY, GALLIUM arsenide, QUANTUM wells
Abstract

Examines the magnitude, origin and evolution of piezoelectric optical nonlinearities in strained (111) B indium-gallium arsenide/gallium arsenide quantum wells. Information on the sample structure and characterization; Application of the temporally and spectrally resolved differential transmission; Details on the steady-state measurements.

Published
1993
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13. Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Author

Rodriguez, J., primary, Remack, K., additional, Gertas, J., additional, Wang, L., additional, Zhou, C., additional, Boku, K., additional, Rodriguez-Latorre, J., additional, Udayakumar, K. R., additional, Summerfelt, S., additional, Moise, T., additional, Kim, D., additional, Groat, J., additional, Eliason, J., additional, Depner, M., additional, and Chu, F., additional

Published
2010
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15. Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS

Author

Rodriguez, J. A., primary, Remack, K. A., additional, Gertas, J., additional, Boku, K., additional, Udayakumar, K. R., additional, Summerfelt, S.R., additional, Shinn, G., additional, Haider, A., additional, Madan, S., additional, McAdams, H., additional, Moise, T. S., additional, Bailey, R., additional, Eliason, J., additional, Depner, M., additional, Kim, D., additional, and Staubs, P., additional

Published
2008
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16. Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Author

Rodriguez, J., primary, Remack, K., additional, Gertas, J., additional, Boku, K., additional, Udayakumar, K.R., additional, Summerfelt, S., additional, Shinn, G., additional, Madan, S., additional, McAdams, H., additional, Moise, T., additional, Eliason, J., additional, Bailey, R., additional, Depner, M., additional, Kim, D., additional, and Staubs, P., additional

Published
2007
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17. Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

Author

Udayakumar, K. R., primary, Moise, T. S., additional, Summerfelt, S. R., additional, Boku, K., additional, Remack, K. A., additional, Gertas, J., additional, Haider, A., additional, Obeng, Y., additional, Martin, J. S., additional, Rodriguez, J., additional, Shinn, G., additional, McKerrow, A., additional, Eliason, J., additional, Bailey, R., additional, and Fox, G. R., additional

Published
2007
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20. Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Author

Udayakumar, K. R., primary, Boku, K., additional, Remack, K. A., additional, Rodriguez, J., additional, Summerfelt, S. R., additional, Celii, F. G., additional, Aggarwal, S., additional, Martin, J. S., additional, Hall, L., additional, Matz, L., additional, Rathsack, B., additional, McAdams, H., additional, and Moise, T. S., additional

Published
2006
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21. Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process

Author

Udayakumar, K. R., primary, Moise, T. S., additional, Summerfelt, S. R., additional, Celii, F. G., additional, Shinn, G., additional, Boku, K., additional, Remack, K., additional, Haider, A., additional, Anderson, D., additional, Gertas, J., additional, Obeng, Y., additional, Albrecht, G., additional, Martin, J. S., additional, Rodriguez, J., additional, Khan, B., additional, Aggarwal, S., additional, Schauer, N., additional, McAdams, H., additional, Madan, S., additional, McKerrow, A., additional, Eliason, J., additional, Groat, J., additional, Bailey, R., additional, Fox, G. R, additional, Jabillo, E., additional, and Walbert, J., additional

Published
2006
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22. Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Author

Rodriguez, J.A., primary, Remack, K., additional, Boku, K., additional, Udayakumar, K.R., additional, Aggarwal, S., additional, Summerfelt, S.R., additional, Celii, F.G., additional, Martin, S., additional, Hall, L., additional, Taylor, K., additional, Moise, T., additional, McAdams, H., additional, McPherson, J., additional, Bailey, R., additional, Fox, G., additional, and Depner, M., additional

Published
2004
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23. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

Author

McAdams, H.P., primary, Acklin, R., additional, Blake, T., additional, Du, X.-H., additional, Eliason, J., additional, Fong, J., additional, Kraus, W.F., additional, Liu, D., additional, Madan, S., additional, Moise, T., additional, Natarajan, S., additional, Qian, N., additional, Qiu, Y., additional, Remack, K.A., additional, Rodriguez, J., additional, Roscher, J., additional, Seshadri, A., additional, and Summerfelt, S.R., additional

Published
2004
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25. Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory

Author

Gilbert, S. R., primary, Hunter, S., additional, Ritchey, D., additional, Chi, C., additional, Taylor, D. V., additional, Amano, J., additional, Aggarwal, S., additional, Moise, T. S., additional, Sakoda, T., additional, Summerfelt, S. R., additional, Singh, K. K., additional, Kazemi, C., additional, Carl, D., additional, and Bierman, B., additional

Published
2003
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29. Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect

Author

Summerfelt, S. R., primary, Moise, T. S., additional, Xing, G., additional, Colombo, L., additional, Sakoda, T., additional, Gilbert, S. R., additional, Loke, A. L. S., additional, Ma, S., additional, Wills, L. A., additional, Kavari, R., additional, Hsu, T., additional, Amano, J., additional, Johnson, S. T., additional, Vestcyk, D. J., additional, Russell, M. W., additional, Bilodeau, S. M., additional, and van Buskirk, P., additional

Published
2001
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