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Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW$^2$.

The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $\chi^{\left(2\right)}$ nonlinear optical processes. In this work, we detail our 100-mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400-900 GHz. We demonstrate intrinsic resonator quality factors as high as 324,000 (440,000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB cm$^{-1}$ (1.22 dB cm$^{-1}$) propagation loss. We analyze the loss versus waveguide width and resonator radius to establish the operating regime for optimal 775-to-1550 nm phase matching. By combining the high $\chi^{\left(2\right)}$ and $\chi^{\left(3\right)}$ optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation.

Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.

Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to $20$ GHz/mW$^2$ pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps raw key rates while maintaining less than 10$\%$ error rate and sufficient two-photon visibility to ensure security of the channel. When the $>$20 frequency modes are multiplexed, we estimate $>$100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 $\mu$W of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the UCSB campus and used to transmit a 21 kB image with $<9\%$ error., Comment: 14 pages, 8 figures

We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III-V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factors $Q \approx 17000$ representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of $\approx 400\,\mathrm{MHz}$ resonators is achieved to temperatures $T>7\,\mathrm{K}$ and electrical radio frequency powers $P_{\mathrm{rf}}>+9\,\mathrm{dBm}$. Heterogeneously integrated single quantum dots couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid quantum dot - surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the quantum dot. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits., Comment: submitted manuscript

Surface acoustic waves (SAWs) are a versatile tool for coherently interfacing with a variety of solid-state quantum systems spanning microwave to optical frequencies, including superconducting qubits, spins, and quantum emitters. Here, we demonstrate SAW cavity optomechanics with quantum emitters in 2D materials, specifically monolayer WSe$_2$, on a planar lithium niobate SAW resonator driven by superconducting electronics. Using steady-state photoluminescence spectroscopy and time-resolved single-photon counting, we map the temporal dynamics of modulated 2D emitters under coupling to different SAW cavity modes, showing energy-level splitting consistent with deformation potential coupling of 30 meV/%. We leverage the large anisotropic strain from the SAW to modulate the excitonic fine-structure splitting on a nanosecond timescale, which may find applications for on-demand entangled photon-pair generation from 2D materials. Cavity optomechanics with SAWs and 2D quantum emitters provides opportunities for compact sensors and quantum electro-optomechanics in a multi-functional integrated platform that combines phononic, optical, and superconducting electronic quantum systems.

Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to $46\%$ at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.

Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $\chi^\left(2\right)$ and $\chi^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3-dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we demultiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.

The search for an ideal single-photon source has generated significant interest in discovering novel emitters in materials as well as developing new manipulation techniques to gain better control over the emitters' properties. Quantum emitters in atomically thin two-dimensional (2D) materials have proven very attractive with high brightness, operation under ambient conditions, and the ability to be integrated with a wide range of electronic and photonic platforms. This perspective highlights some of the recent advances in quantum light generation from 2D materials, focusing on hexagonal boron nitride and transition metal dichalcogenides (TMDs). Efforts in engineering and deterministically creating arrays of quantum emitters in 2D materials, their electrical excitation, and their integration with photonic devices are discussed. Lastly, we address some of the challenges the field is facing and the near-term efforts to tackle them. We provide an outlook towards efficient and scalable quantum light generation from 2D materials towards controllable and addressable on-chip quantum sources.

Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges., Comment: Submitted to the Journal of Physics: Photonics

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness and quality, including weak optical nonlinearity or high waveguide loss. Here, we demonstrate a novel, ultra-low-loss AlGaAs-on-insulator platform capable of generating time-energy entangled photons in a $Q$ $>1$ million microring resonator with nearly 1,000-fold improvement in brightness compared to existing sources. The waveguide-integrated source exhibits an internal generation rate greater than $20\times 10^9$ pairs sec$^{-1}$ mW$^{-2}$, emits near 1550 nm, produces heralded single photons with $>99\%$ purity, and violates Bell's inequality by more than 40 standard deviations with visibility $>97\%$. Combined with the high optical nonlinearity and optical gain of AlGaAs for active component integration, these are all essential features for a scalable quantum photonic platform., Comment: 12 pages, 5 figures, 1 table

Quantum-dot-like WSe$_2$ single-photon emitters have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources have been an inhibitor of their full potential. Existing strain engineering methods face fundamental challenges in extending the working temperature while maintaining the emitter's fabrication yield and purity. In this work, we demonstrate a novel method of designing site-specific single-photon emitters in atomically thin WSe$_2$ with near-unity yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of these emitters exhibit exciton-biexciton cascaded emission, purities above 95%, and working temperatures extending up to 150 K, which is the highest observed in van der Waals semiconductor single-photon emitters without Purcell enhancement. This methodology, coupled with possible plasmonic or optical micro-cavity integration, potentially furthers the realization of future scalable, room-temperature, and high-quality van der Waals quantum light sources.

As optical two-dimensional coherent spectroscopy (2DCS) is extended to a broader range of applications, it is critical to improve the detection sensitivity of optical 2DCS. We developed a fast phase-cycling scheme in a non-collinear optical 2DCS implementation by using liquid crystal phase retarders to modulate the phases of two excitation pulses. The background in the signal can be eliminated by combining either two or four interferograms measured with a proper phase configuration. The effectiveness of this method was validated in optical 2DCS measurements of an atomic vapor. This fast phase-cycling scheme will enable optical 2DCS in novel emerging applications that require enhanced detection sensitivity., Comment: 4 pages, 3 figures, 1 table

In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exciton lifetimes in $\text{MoSe}_{\text{2}}$/$\text{WSe}_{\text{2}}$ twisted bilayers (TBLs) change by one order of magnitude when the twist angle is varied from 1$^\circ$ to 3.5$^\circ$. Using a low-energy continuum model, we theoretically separate two leading mechanisms that influence interlayer exciton radiative lifetimes. The shift to indirect transitions in the momentum space with an increasing twist angle and the energy modulation from the moir\'e potential both have a significant impact on interlayer exciton lifetimes. We further predict distinct temperature dependence of interlayer exciton lifetimes in TBLs with different twist angles, which is partially validated by experiments. While many recent studies have highlighted how the twist angle in a vdW TBL can be used to engineer the ground states and quantum phases due to many-body interaction, our studies explore its role in controlling the dynamics of optically excited states, thus, expanding the conceptual applications of "twistronics".

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $\mu$m pump is converted to a 1.0 $\mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{\circ}$C with a slope of 0.24 nm/$^{\circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation., Comment: 7 pages, 7 figures

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal confinement, and physical robustness. In this work, we demonstrate a new platform, suspended AlGaAs waveguides integrated on silicon, providing excellent performance in all of these metrics. We demonstrate low propagation losses within a span of nearly two octaves (1.26 to 4.6 $\mu$m) with exemplary performance of 0.45 dB/cm at $\lambda = 2.4$ $\mu$m. We exploit the high nonlinearity of this platform to demonstrate 1560 nm-pumped second-harmonic generation and octave-spanning supercontinuum reaching out to 2.3 $\mu$m with 3.4 pJ pump pulse energy. With mid-IR pumping, we generate supercontinuum spanning from 2.3 to 6.5 $\mu$m. Finally, we demonstrate the versatility of the platform with mid-infrared passive devices such as low-loss 10 $\mu$m-radius bends, compact power splitters with 96 $\pm$ 1% efficiency and edge couplers with 3.0 $\pm$ 0.1 dB loss. This platform has strong potential for multi-functional integrated photonic systems in the mid-IR.

The dephasing mechanisms of p-shell and s-shell excitons in an InAs self-assembled quantum dot ensemble are examined using two-dimensional coherent spectroscopy (2DCS). 2DCS provides a comprehensive picture of how the energy level structure of dots affects the exciton dephasing rates and recombination lifetimes. We find that at low temperatures, dephasing of s-shell excitons is lifetime limited, whereas p-shell excitons exhibit significant pure dephasing due to scattering between degenerate spin states. At elevated temperatures, quadratic exciton-phonon coupling plays an important role in both s-shell and p-shell exciton dephasing. We show that multiple p-shell states are also responsible for stronger phonon dephasing for these transitions

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moir\'e superlattice. While it is widely recognized that a moir\'e superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moir\'e potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moir\'e potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.

In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 $\mu$s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.

We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $\mu$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.

The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of this quantum degree of freedom. The charged exciton (trion) in TMDs is an intriguing alternative to the neutral exciton for control of valley pseudospin because of its long spontaneous recombination lifetime, its robust valley polarization, and its coupling to residual electronic spin. Trion valley coherence has however been unexplored due to experimental challenges in accessing it spectroscopically. In this work, we employ ultrafast two-dimensional coherent spectroscopy to resonantly generate and detect trion valley coherence in monolayer MoSe$_2$ demonstrating that it persists for a few-hundred femtoseconds. We conclude that the underlying mechanisms limiting trion valley coherence are fundamentally different from those applicable to exciton valley coherence. Based on these observations, we suggest possible strategies for extending valley coherence times in two-dimensional materials.

In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods alone. Here, we implement polarization-resolved two-dimensional coherent spectroscopy to unravel the complex optical response of monolayer MoSe$_2$ and identify multiple higher-order correlated states. Decisive signatures of neutral and charged inter-valley biexcitons appear in cross-polarized two-dimensional spectra as distinct resonances with respective ~20 meV and ~5 meV binding energies--similar to recent calculations using variational and Monte Carlo methods. A theoretical model taking into account the valley-dependent optical selection rules reveals the specific quantum pathways that give rise to these states. Inter-valley biexcitons identified here, comprised of neutral and charged excitons from different valleys, offer new opportunities for creating exotic exciton-polariton condensates and for developing ultrathin biexciton lasers and polarization-entangled photon sources.

The amplitude and phase of a material's nonlinear optical response provide insight into the underlying electronic dynamics that determine its optical properties. Phase-sensitive nonlinear spectroscopy techniques are widely implemented to explore these dynamics through demodulation of the complex optical signal field into its quadrature components; however, complete reconstruction of the optical response requires measuring both the amplitude and phase of each quadrature, which is often lost in standard detection methods. Here, we implement a heterodyne-detection scheme to fully reconstruct the amplitude and phase response of spectral hole-burning from InAs/GaAs charged quantum dots. We observe an ultra-narrow absorption profile and a corresponding dispersive lineshape of the phase, which reflect the nanosecond optical coherence time of the charged exciton transition. Simultaneously, the measurements are sensitive to electron spin relaxation dynamics on a millisecond timescale, as this manifests as a magnetic-field dependent delay of the amplitude and phase modulation. Appreciable amplitude modulation depth and nonlinear phase shift up to 0.09$\times\pi$ radians (16$\deg$) are demonstrated, providing new possibilities for quadrature modulation at faint photon levels with several independent control parameters, including photon number, modulation frequency, detuning, and externally applied fields.

The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal the coherent and incoherent nature of exciton-trion coupling and the relevant timescales in monolayer MoSe2 using optical two-dimensional coherent spectroscopy. Coherent interaction between excitons and trions is definitively identified as quantum beating of cross-coupling peaks that persists for a few hundred femtoseconds. For longer times up to 10 ps, surprisingly, the relative intensity of the cross-coupling peaks increases, which is attributed to incoherent energy transfer likely due to phonon-assisted up-conversion and down-conversion processes that are efficient even at cryogenic temperature.

Since the discovery of semiconducting monolayer transition metal dichalcogenides, a variety of experimental and theoretical studies have been carried out seeking to understand the intrinsic exciton population decay and valley relaxation dynamics. Reports of the exciton decay time range from hundreds of femtoseconds to ten nanoseconds, while the valley depolarization time can exceed one nanosecond. At present, however, a consensus on the microscopic mechanisms governing exciton radiative and non-radiative recombination is lacking. The strong exciton oscillator strength resulting in up to 20% absorption for a single monolayer points to ultrafast radiative recombination. However, the low quantum yield and large variance in the reported lifetimes suggest that non-radiative Auger-type processes obscure the intrinsic exciton radiative lifetime. In either case, the electron-hole exchange interaction plays an important role in the exciton spin and valley dynamics. In this article, we review the experiments and theory that have led to these conclusions and comment on future experiments that could complement our current understanding.

Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information science and photonics research. Nature sets the ultimate limit, however, given by the strength of the system's coupling to the electromagnetic field. Here, we establish the ability to electronically control this coupling and $\textit{enhance}$ the coherence time of a quantum dot excitonic state. Coherence control is demonstrated on the positively charged exciton transition (an electron Coulomb-bound with two holes) in quantum dots embedded in a photonic waveguide by manipulating the electron and hole wavefunctions through an applied lateral electric field. With increasing field up to 15 kV cm$^{-1}$, the coherence time increases by a factor of two from $\sim1.4$ ns to $\sim2.7$ ns. Numerical calculations reveal that longer coherence arises from the separation of charge carriers by up to $\sim6$ nm, which leads to a $30\%$ weaker transition dipole moment. The ability to electrostatically control the coherence time and transition dipole moment opens new avenues for quantum communication and novel coupling schemes between distant qubits., Comment: 12 pages, 3 figures

In crystals, energy band extrema in momentum space can be identified by their valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition metal dichalcogenides. However, the valley coherence time, a key quantity for manipulating the valley pseudospin, has never been measured in any material. In this work, we use a sequence of laser pulses to resonantly generate a coherent superposition of excitons (Coulomb-bound electron-hole pairs) in opposite valleys of monolayer WSe$_2$. The imposed valley coherence persists for approximately one hundred femtoseconds. We propose that the electron-hole exchange interaction provides an important decoherence mechanism in addition to exciton population decay. Our work provides critical insight into the requirements and strategies for optical manipulation of the valley pseudospin for future valleytronics applications., Comment: 23 pages, 6 figures

We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pumping the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low energy side of the inhomogeneously broadened exciton resonance, the trion formation time increases by ~ 50%. This feature can be explained by the existence of both localized and delocalized excitons in a disordered potential and suggests the existence of an exciton mobility edge in TMDs. The quasiparticle formation and conversion processes are important for interpreting photoluminescence and photoconductivity in TMDs., Comment: 6 pages, 4 figures; accepted to PRB rapid

Monolayer transition metal dichalcogenides feature Coulomb-bound electron-hole pairs (excitons) with exceptionally large binding energy and coupled spin and valley degrees of freedom. These unique attributes have been leveraged for electrical and optical control of excitons for atomically-thin optoelectronics and valleytronics. The development of such technologies relies on understanding and quantifying the fundamental properties of the exciton. A key parameter is the intrinsic exciton homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions. Using optical coherent two-dimensional spectroscopy, we provide the first experimental determination of the exciton homogeneous linewidth in monolayer transition metal dichalcogenides, specifically tungsten diselenide (WSe2). The role of exciton-exciton and exciton-phonon interactions in quantum decoherence is revealed through excitation density and temperature dependent linewidth measurements. The residual homogeneous linewidth extrapolated to zero density and temperature is ~1.5 meV, placing a lower bound of approximately 0.2 ps on the exciton radiative lifetime. The exciton quantum decoherence mechanisms presented in this work are expected to be ubiquitous in atomically-thin semiconductors.