29 results on '"Murakoshi, Atsushi"'
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2. Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si(sub 1-x)Gex source structure
3. Advanced Ion Implantation Technology for High Performance Transistors
4. Cryo-Implantation Technology for Controlling Defects and impurity out diffusion
5. Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing
6. Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing
7. Reduction of surface roughness and defect density by cryogenic implantation of arsenic
8. Improvement of P–N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology
9. Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing
10. Three-Dimensional Fabric Analysis for Anisotropic Material Using Multi-Directional Scanning Line —Application to X-ray CT Image—
11. Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
12. Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2Formation on Shallow n+/p Si Diodes
13. 10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
14. Highly Reliable DRAM Technology for ASM with Dual Nitrogen Concentration Gate Oxynitrides using Selective Nitrogen Implantation
15. Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
16. Ultrashallow Junction Formation for Sub-100 nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
17. Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
18. Cryo-Implantation Technology for Controlling Defects and impurity out diffusion.
19. Cryo-Implantation Technology for Controlling Defects and impurity out diffusion
20. Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs
21. Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond
22. Ru Electrode Deposited by Sputtering in Ar/O2 Mixture Ambient
23. Ultra high dose boron ion implantation: super-saturation of boron and its application
24. Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O2 Mixture Ambient
25. Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor
26. High Performance 35 nm Gate Length CMOS With NO Oxynitride Gate Dielectric and Ni Salicide.
27. Ru Electrode Deposited by Sputtering in Ar/O2Mixture Ambient
28. Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O2Mixture Ambient
29. Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12Icosahedron as a Double Acceptor
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