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Strong Fermi-level pinning is observed in WSe2 devices with edge contacts due to the presence of an oxide layer at the etched interface.

Doped graphene could be of use in next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled in the material and leads to external disorder that diminishes carrier mobility and conductivity. Here we show that graphene can be efficiently doped using a monolayer of tungsten oxyselenide (TOS) that is created by oxidizing a monolayer of tungsten diselenide. When the TOS monolayer is in direct contact with graphene, a room-temperature mobility of 2,000 cm2 V−1 s−1 at a hole density of 3 × 1013 cm−2 is achieved. Hole density and mobility can also be controlled by inserting tungsten diselenide interlayers between TOS and graphene, where increasing the layers reduces the disorder. With four layers, a mobility value of around 24,000 cm2 V−1 s−1 is observed, approaching the limit set by acoustic phonon scattering, resulting in a sheet resistance below 50 Ω sq−1. To illustrate the potential of our approach, we show that TOS-doped graphene can be used as a transparent conductor in a near-infrared (1,550 nm) silicon nitride photonic waveguide and ring resonator. A monolayer of tungsten oxyselenide, created by oxidizing a layer of tungsten diselenide, can be used to efficiently dope graphene, leading to a room-temperature mobility of 2,000 cm2 V–1 s–1 at a hole density of 3 × 1013 cm–2.

Highly doped graphene holds promise for next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled, and introduces external disorder that significantly diminishes the carrier mobility and therefore the graphene conductivity. Here, we show that monolayer tungsten oxyselenide (TOS) created by oxidation of WSe2 acts as an efficient and low-disorder hole-dopant for graphene. When the TOS is directly in contact with graphene, the induced hole density is 3 × 1013 cm-2 , and the room-temperature mobility is 2,000 cm2 /V·s, far exceeding that of chemically-doped graphene. Inserting WSe2 layers between the TOS and graphene tunes the induced hole density as well as reduces charge disorder such that the mobility exceeds 20,000 cm2 /V·s and reaches the limit set by acoustic phonon scattering, resulting in sheet resistance below 50 Ω/□. An electrostatic model based on work-function mismatch accurately describes the tuning of the carrier density with WSe2 interlayer thickness. These films show unparalleled performance as transparent conductors at telecommunication wavelengths, as shown by measurements of transmittance in thin films and insertion loss in photonic ring resonators. This work opens up new avenues in optoelectronics incorporating two-dimensional heterostructures including infrared transparent conductors, electro-phase modulators, and various junction devices.

Tungsten diselenide (WSe2) has received significant attention because it shows the pristine ambipolar property arising from the Fermi level located near the midgap and can be converted to uni-polar form. In this study, we observe the formation of tungsten oxide (WOx) on the WSe2 surface after oxygen plasma treatment and show that the p-type WOx dopes WSe2. In our devices that underwent plasma treatment, it was interesting to find a strong correlation between the changes in the work function of WSe2 and a gold electrode, and the channel and contact resistances. The channel resistance changes very sensitively at a rate of 64 meV per dec with the increase in the WSe2 channel work function, which is close to the thermal limit; this indicates the defect-free oxidized WSe2 channel. The carrier transport in the oxidized WSe2 FET is shown to change to a high performance p-type device with greatly reduced channel and contact resistances with the increase in the plasma oxidation time.

Osteoarthritis (OA) is the most common type of arthritis and is associated with wear and tear, aging, and inflammation. Previous studies revealed that several antimicrobial peptides are up-regulated in the knee synovium of patients with OA or rheumatoid arthritis. Here, we investigated the functional effects of cathelicidin-related antimicrobial peptide (Cramp) on OA pathogenesis. We found that Cramp is highly induced by IL-1β via the NF-κB signaling pathway in mouse primary chondrocytes. Elevated Cramp was also detected in the cartilage and synovium of mice suffering from OA cartilage destruction. The treatment of chondrocytes with Cramp stimulated the expression of catabolic factors, and the knockdown of Cramp by small interfering RNA reduced chondrocyte catabolism mediated by IL-1β. Moreover, intra-articular injection of Cramp into mouse knee joints at a low dose accelerated traumatic OA progression. At high doses, Cramp affected meniscal ossification and tears, leading to cartilage degeneration. These findings demonstrate that Cramp is associated with OA pathophysiology.

배경 및 목적: 언어발달이 느린 아동들은 어휘 습득 시 행동이나 상태 변화를 나타내는 동사 학습에 어려움을 보인다. 본 연구에서는 동사 학습의 용이성을 증대하기 위하여 표현언어발달지연아동에게 현실 환경에서 동작을 직접 보여주는 증강현실 기반 언어중재를 제공하여 동사 표현 정반응률과 일반화에 미치는 영향을 살펴보았다. 방법: 생활연령에 비하여 표현언어가...

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP–MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Tungsten diselenide (WSe

Currently 2D crystals are being studied intensively for use in future nanoelectronics, as conventional semiconductor devices face challenges in high power consumption and short channel effects when scaled to the quantum limit. Toward this end, achieving barrier-free contact to 2D semiconductors has emerged as a major roadblock. In conventional contacts to bulk metals, the 2D semiconductor Fermi levels become pinned inside the bandgap, deviating from the ideal Schottky-Mott rule and resulting in significant suppression of carrier transport in the device. Here, MoS

Currently 2D crystals are being studied intensively for use in future nanoelectronics, as conventional semiconductor devices face challenges in high power consumption and short channel effects when scaled to the quantum limit. Toward this end, achieving barrier-free contact to 2D semiconductors has emerged as a major roadblock. In conventional contacts to bulk metals, the 2D semiconductor Fermi levels become pinned inside the bandgap, deviating from the ideal Schottky-Mott rule and resulting in significant suppression of carrier transport in the device. Here, MoS2 polarity control is realized without extrinsic doping by employing a 1D elemental metal contact scheme. The use of high-work-function palladium (Pd) or gold (Au) enables a high-quality p-type dominant contact to intrinsic MoS2 , realizing Fermi level depinning. Field-effect transistors (FETs) with Pd edge contact and Au edge contact show high performance with the highest hole mobility reaching 330 and 432 cm2 V-1 s-1 at 300 K, respectively. The ideal Fermi level alignment allows creation of p- and n-type FETs on the same intrinsic MoS2 flake using Pd and low-work-function molybdenum (Mo) contacts, respectively. This device acts as an efficient inverter, a basic building block for semiconductor integrated circuits, with gain reaching 15 at VD = 5 V.

We have shown that chronic administration of the Toll-like receptor 2 (TLR2) agonist Pam3CSK(4) prevents diabetes in NOD mice by inducing TLR2 tolerance of dendritic cells (DCs). We have also reported that a novel dipeptidyl peptidase 4 (DPP4) inhibitor, DA-1229, could increase beta cell mass. Here we investigated whether a combination of DPP4 inhibition, with beneficial effects on beta cell mass, and TLR2 tolerisation, protecting beta cells from autoimmune destruction, could treat a model of established type 1 diabetes.Diabetic NOD mice were treated with 100 μg Pam3CSK(4), administered three times a week for 3 weeks, in combination with feeding with chow containing 0.3% DA-1229. Beta cell mass and proliferation were studied by immunohistochemistry. DC tolerance was assessed by studying diabetogenic CD4(+) T cell priming after adoptive transfer and expression of costimulatory molecules on DCs by flow cytometry.We observed reversal of diabetes in NOD mice by Pam3CSK(4)+DA-1229 but not by either Pam3CSK(4) or DA-1229 alone. Beta cell mass and the number of proliferating beta cells were significantly enhanced by Pam3CSK(4)+DA-1229, but not by either Pam3CSK(4) or DA-1229 alone. Diabetogenic T cell priming by DCs and upregulation of costimulatory molecules after ex vivo stimulation were attenuated in mice treated with Pam3CSK(4)+DA-1229, indicating DC tolerance. The relative proportions of CD4(+) T cells, CD8(+) T cells, B cells, DCs, macrophages and regulatory T cells, and T-helper polarisation were unchanged by treatment with Pam3CSK(4)+DA-1229.These data demonstrate that a combination of TLR2 tolerisation and DPP4 inhibition can reverse early-onset diabetes in NOD mice.

In this paper, we develop an Intelligent Wheelchair (IW) system to provide safe mobility to the disabled or elderly people with cognitive and motor impairments. Our IW provides two main functions: obstacle avoidance and situation awareness. Firstly, it detects a variety of obstacles by a combination of a camera and 8 range sensors, and finds the viable paths to avoid the collisions of obstacles based on learning-based classification. Secondly, it categorizes the current situation where a user is standing on as sidewalk, roadway and traffic intersection by analyzing the texture properties and shapes of the images, thus prevents the collisions of vehicle at the traffic intersection. The proposed system was tested on various environments then the results show that the proposed system can recognize the outdoor place types with an accuracy of 98.25% and produce the viable paths with an accuracy of 92.00% on outdoors.

ObjectiveTo determine bispectral index (BIS) values produced by equipotent concentrations of commonly used volatile anaesthetics.MethodsFemale patients undergoing thyroidectomy were randomly assigned to receive isoflurane, sevoflurane or desflurane anaesthesia. After induction, anaesthesia was maintained by the volatile agent at 1 minimum alveolar concentration and supplemented with remifentanil infusion. BIS values were recorded during 1 h surgical anaesthesia after a 15 min equilibrium phase.ResultsTime-averaged BIS value during the study period was significantly lower in the desflurane group ( n = 29) than the sevoflurane group ( n = 27) (37.0 ± 4.9 vs 41.5 ± 5.9). Duration of deep hypnosis (BIS ConclusionsDesflurane produces a greater hypnotic effect than sevoflurane during equipotent anaesthesia. Management of volatile anaesthesia using predetermined minimum alveolar concentration targets can lead to an unnecessarily long duration of deep hypnosis.