A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS

Currently 2D crystals are being studied intensively for use in future nanoelectronics, as conventional semiconductor devices face challenges in high power consumption and short channel effects when scaled to the quantum limit. Toward this end, achieving barrier-free contact to 2D semiconductors has emerged as a major roadblock. In conventional contacts to bulk metals, the 2D semiconductor Fermi levels become pinned inside the bandgap, deviating from the ideal Schottky-Mott rule and resulting in significant suppression of carrier transport in the device. Here, MoS