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Triboelectric nanogenerators (TENGs) are crucial for applications such as smart sensors and bio-electronics. In the current work, we aimed for improved performance of TENGs with incorporation of BaTiO3 powder, which is known for its strong ferroelectric properties, combining it with epoxy resin to improve the flexibility of our devices. We observed that our TENGs can operate for over 24 000 cycles with no degradation of function. Additionally, we improved the electrical performance of the TENGs by incorporating various aluminum concentrations that change the electronic properties in the form of mixed epoxy resin, BaTiO3, and Al nanopowders. To identify the optimum conditions for the best performance, we analyzed the electrical characteristics and material properties by employing scanning electron microscopy, energy dispersive x-ray spectroscopy, and x-ray diffractometry characterization techniques. Our findings suggest that this innovative combination of materials and optimization techniques can significantly improve the performance of TENGs, making them ideal for practical applications in various fields, such as low-power electronics, environmental monitoring and healthcare. Moreover, these enhanced TENGs can serve as sustainable and dependable energy sources for various applications. [ABSTRACT FROM AUTHOR]

The complexity and uncertainty of power sources connected to transmission networks need to be considered. Planners need information on the sustainability and economics of transmission network expansion planning (TNEP). This work presents a newly proposed method for TNEP that considers high-penetration solar energy by using the particle swarm optimization (PSO) algorithm. The power sources, thermal and hydropower plants, and conditions of load were set in the account, including an uncertain power source and solar energy (PV). The optimal sizing and locating of the PV to be connected to the network were determined by the PSO. The PV grid code was set in the account. The new line's investment cost and equipment was analyzed. The PV cost was considered based on the power loss, and the system's reliability was improved. The IEEE 118 bus test system and Lao PDR's system were requested to test the proposed practice. The results demonstrate that the proposed TNEP method is robust and feasible. The simulation results will be applied to guide the power system planning of Lao PDR. [ABSTRACT FROM AUTHOR]

Spin-transfer torque magnetic random-access memory (STT-MRAM) based on a single-barrier magnetic tunnel junction (SBMTJ) and a double-barrier magnetic tunnel junction (DBMTJ) has evolved along with a low switching current and low energy consumption to obtain a high areal density and a fast switching speed. The increment of initial temperature, ${T}_{{\text {in}}}$ , in STT-MRAM can achieve low switching energy, ${E}_{{\text {SW}}}$. However, this leads to an unavoidable decrease in $\Delta $ and switching efficiency. In this paper, SBMTJ and DBMTJ were analyzed in terms of the switching efficiency factor with ${E}_{{\text {SW}}}$ reduction by increasing the ${T}_{{\text {in}}}$. The switching temperature, ${T}_{{\text {SW}}}$ , was investigated using a finite-element method simulation. The results show that the DBMTJ(A) and SBMTJ with the same MgO layer thickness of 0.9 nm provide a higher switching current, ${I}_{{\text {C}}}$ , than the DBMTJ(B) with a MgO layer thickness of 1.3 nm. The ${T}_{{\text {SW}}}$ in a DBMTJ(A) is higher than that in an SBMTJ, while ${T}_{{\text {SW}}}$ for a DBMTJ(B) is the smallest because of its low ${I}_{{\text {C}}}$. The DBMTJ(A) and DBMTJ(B) can be applied in a higher temperature range than the SBMTJ at a $\Delta $ of 40. In addition, the STT efficiency factor, $\Delta /{I}_{{\text {C0}}}$ , for a DBMTJ is better than the factor for an SBMTJ. Although the temperature increment would cause an undesirable reduction in $\Delta $ , it can reach a low ${E}_{{\text {SW}}}$ for the requirement of a fast write access time. Therefore, the control device for increasing the ${T}_{{\text {in}}}$ in the MTJs is attractive and should be promoted in the advancement of memory technology. [ABSTRACT FROM AUTHOR]