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3. Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Author

Kumari, Shikha, primary, Singh, Rashmi, additional, Kumar, Shivam, additional, Murty, N V L Narasimha, additional, Planson, Dominique, additional, Raynaud, Christophe, additional, Sonneville, Camille, additional, Morel, Hervé, additional, Phung, Luong Viet, additional, Ngo, Thi Huong, additional, de Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Maher, Hassan, additional, Sommet, Raphael, additional, Nallatamby, Jean-Christophe, additional, and Raja, P. Vigneshwara, additional

Published
2024
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5. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Author

Cordier, Yvon, primary, Ngo, Thi Huong, additional, Comyn, Rémi, additional, Chenot, Sébastien, additional, Brault, Julien, additional, Nemoz, Maud, additional, Vennéguès, Philippe, additional, Damilano, Benjamin, additional, Frayssinet, Eric, additional, and Vézian, Stéphane, additional

Published
2024
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6. Petrological and geochemical characteristics of the Low- and High-Hf Nam Meng dioritoid, northwest Vietnam: Implication for the mantle partial melting, mixing, and magmatic differentiation

Author

Tran, Tuan-Anh, primary, Pham-Ngoc, Can, additional, Nguyen, Hoang, additional, Vu Hoang, Ly, additional, Ngo Thi, Huong, additional, Tran Quoc, Cong, additional, Pham Thi Phuong, Lien, additional, Tran Trong, Hoa, additional, Vuong Bui Thi, Sinh, additional, and Pham Thanh, Thuy, additional

Published
2024
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11. Assessment of influencer’s effects on customers’ online purchasing behavior in Vietnam

Author

Pham Minh, Dang Thao Yen, Ngo Thi Huong Quynh, Hoang Thi Hong Yen, Tran Thi Thanh Nga, and Nguyen Van Quoc

Subjects
behavior, influencer, online purchasing source credibility, technology acceptance model, Economic theory. Demography, HB1-3840
Abstract

Today, the development of the Internet and social networks has changed the lives of human beings. The ability of these technologies to connect people in real-time expands the influence of some people in the community. Therefore, this study is conducted to test whether customers change purchasing behavior in online environments under the impact of those influencers by using Technology Acceptance Model (TAM). The study conducted a survey of 503 Vietnameses on Google Form from November 2020 to mid-January 2021. The collected data were analyzed using AMOS 24 with CB-SEM analysis method. The results showed a positive relationship between influencers and customers’ online purchasing behavior. More specifically, customers are more likely to buy online if they trust influencers and their advertisements. This is the most influential factor among the three influencer traits (as source credibility): trustworthiness, expertise, and attractiveness. A remarkable point in this study is that Vietnamese people are more concerned with perceived ease of use when buying online than other factors in the TAM model. This is the basis for businesses to implement influencer marketing strategies and improve the competitiveness of their online business.

Published
2021
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13. Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate.

Author

Elwaradi, Reda, Mehta, Jash, Ngo, Thi Huong, Nemoz, Maud, Bougerol, Catherine, Medjdoub, Farid, and Cordier, Yvon

Subjects
MODULATION-doped field-effect transistors, BREAKDOWN voltage, GALLIUM nitride, MOLECULAR beam epitaxy, ATOMIC force microscopy, MATERIALS analysis, ALUMINUM construction
Abstract

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq. [ABSTRACT FROM AUTHOR]

Published
2023
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15. Effects of Iodine Treatment on the Development of Eggs and Larvae of Rabbitfish (Siganus guttatus Bloch, 1787).

Author

Kieu Thi Huyen, Tran Vinh Phuong, Tran Nguyen Ngoc, Ngo Thi Huong Giang, Ho Ngoc Tram Anh, Nguyen Xuan Huy, and Nguyen Quang Linh

Subjects
SIGANIDAE, IODINE, FISH eggs, FISH larvae, DIETARY supplements
Abstract

Iodine is proven to be an effective disinfectant for fish eggs and is commonly used in a hatchery to improve hatching and survival rates. However, tolerance to iodine can vary in different fish species, and it is essential to determine the optimal concentration to ensure successful hatchery production. This study investigated the optimum concentration and exposure time to iodine during incubation to improve rabbitfish larvae's hatching and fertilization rate from 4/2022 -- 8/2022 in Thua Thien Hue, Vietnam. The study consisted of two experiments: Experiment 1 focused on different iodine concentrations: 0 ppm (C1), 50 ppm (C2), 100 ppm (C3), and 150 ppm (C4). Experiment 2 explored three exposure times: 10 minutes (T1), 20 minutes (T2), and 30 minutes (T3) to increase the fertilization, hatching, and survival rates at five days post-hatching. Data were compiled, analyzed, and compared by ANOVA using SPSS ver. 22.0. The results showed that 100 ppm iodine concentration at 20 minutes of exposure resulted in the optimum hatching, fertilization, and survival rates of S. guttatus during artificial reproduction. In the future, integrated solutions in the use of iodine solution for egg treatment and natural food supplementation at the larval stage should be recommended to improve the efficiency in artificial hatchery production of Rabbitfish. [ABSTRACT FROM AUTHOR]

Published
2024
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20. Effects of protein levels of commercial diets on the growth performance and survival rate of rabbitfish (Siganus guttatus) at the nursing stage

Author

Tran Vinh Phuong, Nguyen Anh Tuan, Nguyen Duy Thuan, Ngo Thi Huong Giang, Tran Nguyen Ngoc, Nguyen Duy Quynh Tram, and Nguyen Quang Linh

Subjects
General Veterinary, General Agricultural and Biological Sciences, General Biochemistry, Genetics and Molecular Biology
Abstract

This study aimed to determine the effect of a commercial diet's protein level on the fry-to-fingerling stage. Thirty days-old fries having the initial length and weight of 18.25 ± 0.15 mm fish-1 and 0.036 ± 0.50 g fish-1 respectively have been used in this study. Diet having three protein levels i.e. 30% (trial 1 as control), 35% (trial 2), 40% (trial 3), and 45% (trial 4), respectively, have been used to evaluate the effect of protein, and each trial has been repeated three times. During the study, stocking density was allocated to 1000 fish per composite tank with a volume of 1 m3. After 30 days of rearing, the weight of fingerlings in trial 1 reached up to 1.50 ± 0.02 g fish-1 and it was recorded as 1.52 ± 0.01g for trial 2, these two were lower than that of trials 3 and 4, where fingerling weight was reported 1.69 ± 0.01 and 1.58g fish-1 respectively and obtained the best weight compared to others. The length of fingerlings at the end of the experimental period was also changed in different trials and it was recorded 47.12; 46.92; 50.97; and 48.89 mm fish-1 for trail 1, 2, 3, and 4 respectively, among the tested combinations lower fingerlings length was recorded for trial 2 (35% CP), but it is not significantly different for trial 1 and 2 and a significant difference (P < 0.05) was reported for trail 2, 3, and 4. The survival rate of fingerlings ranged from 67.27 to 72.33%. Meanwhile, the herd distribution coefficient variation (CVW) in the treatment using 40% protein (trial 3) was the highest at 72.33% (p < 0.05). The results of the study can be concluded that the level of protein has a significant effect on the various growth parameters of fingerlings.

Published
2022

21. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Author

N’Dohi, Atse Julien Eric, primary, Sonneville, Camille, additional, Saidi, Soufiane, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Phung, Luong Viet, additional, Morancho, Frédéric, additional, Maher, Hassan, additional, and Planson, Dominique, additional

Published
2023
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22. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

Author

Gujrati, Rajat, primary, Srivastava, Ashutosh, additional, Vuong, Phuong, additional, Ottapilakkal, Vishnu, additional, Sama, Yves N., additional, Ngo, Thi Huong, additional, Moudakir, Tarik, additional, Patriarche, Gilles, additional, Gautier, Simon, additional, Voss, Paul L., additional, Sundaram, Suresh, additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2023
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24. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode.

Author

N'Dohi, Atse Julien Eric, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, De Mierry, Philippe, Frayssinet, Eric, Cordier, Yvon, Phung, Luong Viet, Morancho, Frédéric, Maher, Hassan, and Planson, Dominique

Subjects
SCHOTTKY barrier diodes, GALLIUM nitride, SPECTROMETRY, STRAY currents, BREAKDOWN voltage, DIODES, CATHODOLUMINESCENCE
Abstract

In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E 2 h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations. [ABSTRACT FROM AUTHOR]

Published
2023
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27. Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission.

Author

Ruterana, Pierre, Morales, Magali, Chery, Nicolas, Ngo, Thi Huong, Chauvat, Marie-Pierre, Lekhal, Kaddour, Damilano, Benjamin, and Gil, Bernard

Subjects
TRANSMISSION electron microscopy, X-ray diffraction, LOW temperatures, QUANTUM wells
Abstract

In this work, InGaN/GaN multi-quantum Wells (MQWs) with strain compensating AlGaN interlayers grown by metalorganic vapor-phase epitaxy have been investigated by high-resolution x-ray diffraction, transmission electron microscopy, and photoluminescence (PL). For different AlGaN strain compensating layer thicknesses varying from 0 to 10.6 nm, a detailed x-ray diffraction analysis shows that the MQW stack becomes completely strained on GaN along a and c. The compensation is full from an AlGaN layer thickness of 5.2 nm, and this does not change up to the largest one that has been investigated. In this instance, AlGaN was grown at the same temperature as the GaN barrier, on top of a protective 3 nm GaN. It is found that the crystalline quality of the system is progressively degraded when the thickness of the AlGaN interlayer is increased through strain concentrated domains, which randomly form inside the 3 nm GaN low temperature layer. These domains systematically contribute to a local decrease of the QW thickness and most probably to an efficient localization of carriers. Despite these defects, the PL is highly improved toward the red wavelengths and compares with the reports on ultrathin AlGaN layers where this has been correlated with the improvement of the crystalline quality, although with less strain compensation. [ABSTRACT FROM AUTHOR]

Published
2020
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28. Assessment of influencer’s effects on customers’ online purchasing behavior in Vietnam

Author

Tran Thi Thanh Nga, Hoang Thi Hong Yen, Dang Thao Yen, Pham Minh, Ngo Thi Huong Quynh, and Nguyen Van Quoc

Subjects
HB1-3840, technology acceptance model, influencer, behavior, online purchasing source credibility, Economic theory. Demography, Business, Marketing, Purchasing
Abstract

Today, the development of the Internet and social networks has changed the lives of human beings. The ability of these technologies to connect people in real-time expands the influence of some people in the community. Therefore, this study is conducted to test whether customers change purchasing behavior in online environments under the impact of those influencers by using Technology Acceptance Model (TAM). The study conducted a survey of 503 Vietnameses on Google Form from November 2020 to mid-January 2021. The collected data were analyzed using AMOS 24 with CB-SEM analysis method. The results showed a positive relationship between influencers and customers’ online purchasing behavior. More specifically, customers are more likely to buy online if they trust influencers and their advertisements. This is the most influential factor among the three influencer traits (as source credibility): trustworthiness, expertise, and attractiveness. A remarkable point in this study is that Vietnamese people are more concerned with perceived ease of use when buying online than other factors in the TAM model. This is the basis for businesses to implement influencer marketing strategies and improve the competitiveness of their online business.

Published
2021

29. Raskolnikov's confession in 'Crime and Punishment': a buddhist perspective

Author

Huong, Luong Thi Thu and Ngo Thi Huong

Abstract

This article is devoted to the analysis of the confession of Raskolnikov, the main character of F.M. Dostoevsky's novel "Crime and Punishment", from the point of view of Buddhism. It is determined that Raskolnikov in the novel is depicted as an intelligent, sympathetic, well-educated, compassionate young man with a promising future, but he commits murder. The main purpose of this study is to review Raskolnikov's mental state before and after the crime in order to assess the contrast between his seemingly happy life and his heinous crime. The second intention is to demonstrate that Sonya is Raskolnikov's karma, in her role as a prostitute who voluntarily followed him to prison in order to get to the essence of his personality, since she is an external projection of the killer's karma that needs to be led and punished.

Published
2022
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30. Multiphysics Characterizations of Vertical GaN Schottky Diodes

Author

Eric N’dohi, Atse Julien, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, de Mierry, P., Frayssinet, Eric, Cordier, Yvon, Phung, Luong Viêt, Morancho, Frédéric, Isoird, Karine, Tasselli, Josiane, Maher, Hassan, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Cathodo-luminescence (CL), [SPI.NRJ]Engineering Sciences [physics]/Electric power, GaN Schottky diodes, Current-voltage I (V), micro-Raman spectroscopy
Abstract

International audience; In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and currentvoltage I(V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.

Published
2022

31. Multiphysics Characterizations of Vertical GaN Schottky Diodes

Author

N'Dohi, Atse Julien Eric, primary, Sonneville, Camille, additional, Saidi, Soufiane, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Phung, Luong Viet, additional, Morancho, Frederic, additional, Isoird, Karine, additional, Tasselli, Josiane, additional, Maher, Hassan, additional, and Planson, Dominique, additional

Published
2022
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33. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Author

Eric N’Dohi, Atse Julien, primary, Sonneville, Camille, additional, Phung, Luong Viet, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Maher, Hassan, additional, Tasselli, Josiane, additional, Isoird, Karine, additional, Morancho, Frédéric, additional, Cordier, Yvon, additional, and Planson, Dominique, additional

Published
2022
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36. MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Author

Eric N’dohi, Atse Julien, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, de Mierry, P., Frayssinet, Éric, Cordier, Yvon, Phung, Luong Viêt, Morancho, Frédéric, Planson, Dominique, Maher, Hassan, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Sonneville, Camille

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience

Published
2021

37. MATERIAL-ECONOMIC FACTORS OF THE KÝ YÊN FESTIVAL AT VĨNH BÌNH COMMUNAL TEMPLE, TIÊN GIANG, VIETNAM.

Author

Nguyen Ngoc Tho and Ngo Thi Huong

Abstract

The economic reform (Đổi mới) that began in 1986 and the current strong development of the market economy have left many marks on almost all aspects of social life in Vietnam, including community beliefs and public ritual space. Material-economic factors penetrate into public ritual spaces (such as a communal temple) and become one of the important driving forces for ritual spaces in some places. Moreover, material-economic values have become important resources to promote the development of rural public. This study of a festival held at the Vĩnh Bình Communal Temple (Tiền Giang province) describes the trend of materialeconomic factors in rural festivals and identifies a new phase of development and a new experience of a local communal temple festival. The material-economic factors are the intrinsic factors of the festival. If used properly, they can enhance the festival atmosphere, promote community cohesion, and enhance the atmosphere of the festival. This case study shows that material-economic factors can be appropriately used as the catalysts for improving the effectiveness of communal festivals and they play a significant role in helping to protect and develop communal institutions in Vietnam today. [ABSTRACT FROM AUTHOR]

Published
2023
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39. Chemical compositions of amphiboles and their references to formation conditions of granitoids from Nam Rom and Song Ma massifs, Northwest Vietnam

Author

Vu Hoang Ly, Ngo Thi Huong, Pham Ngoc Can, Pham Thi Phuong Lien, Tran Trong Hoa, and Tran Tuan Anh

Subjects
geography, geography.geographical_feature_category, Geochemistry, General Earth and Planetary Sciences, Massif, Amphibole, Geology
Abstract

In this paper, the mineralogical and geochemical characteristics of amphiboles and plagioclases of granitoids from the Nam Rom and Song Ma massifs have been investigated to understand their formation conditions. The Nam Rom amphibole and plagioclase are subhedral to euhedral fine- to medium-grained crystals. Whereas, the Song Ma amphibole and plagioclase are anhedral to subhedral fine-grained crystals. Geochemical compositions of amphiboles suggest that Nam Rom and Song Ma amphiboles are edenite and ferro-edenite, respectively. Nam Rom edenite has higher contents of basic constituents (Mg and Ca) and lower contents of felsic constituents (Na and K) compared with the Song Ma ferro-edenite. On the other hand, Si-(Na+K) and Si-Ca apfu ratios of the Nam Rom edenite and the Song Ma ferro-edenite and Al/(Na+K)-Al/(Ca+Na+K) atom per formula unit (apfu) ratios of the Nam Rom edenite and andesine and the Song Ma ferro-edenite, andesine and oligoclase are similar. Formation conditions of the Nam Rom and Song Ma granitoids were calculated using amphibole-plagioclase geobarometer. The Nam Rom granitoid was formed at 3.07-5.32 kbar (10.1-17.6 km under paleo-surface) and 750-785°C. The Song Ma granitoid was formed at 1.04-3.08 kbar (3.4-10.2 km under paleo-surface) and 715-745°C. Therefore, Nam Rom and Song Ma granitoids are thought to be crystallized from the same magma. The former was formed from the immature and more basic stage of magma; the latter was formed from the mature and more felsic stage of magma.

Published
2020

40. Compact automatic solution to detect and warn abandoned children on school buses

Author

Van Binh Nguyen and Ngo Thi Huong

Subjects
Structure (mathematical logic), Identification (information), Computer science, Real-time computing, Task analysis, Embedded processing, Convolutional neural network, Electronic mail
Abstract

This paper proposes a compact automatic system, which could be installed easily on vehicles, to detect and send warnings if pupils are accidentally left on school buses. The detection and identification method is mainly based on MobileNets - the new structure of convolutional neural networks. The information is then fed to an embedded processing module and alarms are provided to relevant people via sound, text messages, phone-calls and/or emails in order to avoid unfortunate consequences. The device is tested on a real bus to show the efficiency and safety with various situations.

Published
2021

41. EVALUATION OF ROOT CANAL OBTURATION RESULTS WITH THE CANAL SHAPING SYSTEM WAVE ONE AND GUTTA THERMAFIL

Author

Ta Anh Cuong, Ngo Thi Huong Lan, Steven Wijaya, and Ta Thu Anh

Subjects
Root Canal Obturation, Materials science, business.industry, Gutta, Dentistry, business
Abstract

Objective: To evaluate the results of root canal obturation with Wave One (WO) canal shaping system and Gutta Thermafil obturation system. Design: Nonrandomized prospective experimental trial between December 2020 and March 2021. Setting: Central Military Hospital 108. Subject: 30 lower incisors extracted teeth without stem rupture, without root damage such as fracture, stray, fissure. Results: The number of slices with the biggest gaps accounting for 16.7%. The number of slices with the smallest gaps accounting for 10%. The number of slices with gaps over the total slices accounted for 14.4%. The void area in the apical slice was 1,413 ± 519.5 µm2 and the largest void area was 38,654.2 ± 3,939.8 µm2. Conclusion: Thermafil Gutta Percha has a good fit to the canal wall, which can seal the canal more easily and accurately.

Published
2021

43. Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Author

Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, N., Barros, Maxime Garcia, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Remi, Ngo, Thi Huong, Alquier, Daniel, CORDIER, Yvon, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), This work was supported by the technology facility network RENATECH and the French National Research Agency (ANR) through the projects ASTRID GoSiMP (ANR-16-ASTR-0006-01) and the 'Investissements d’Avenir' program GaNeX (ANR-11-LABX-0014)., Renatech Network, ANR-16-ASTR-0006,GoSiMP,Optimisations combinées par l'épitaxie pour composants hyperfréquences de puissance GaN sur Silicium(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Lesecq, Marie, Optimisations combinées par l'épitaxie pour composants hyperfréquences de puissance GaN sur Silicium - - GoSiMP2016 - ANR-16-ASTR-0006 - ASTRID - VALID, Laboratoires d'excellence - Réseau national sur GaN - - GANEX2011 - ANR-11-LABX-0014 - LABX - VALID, and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

ORAL; International audience; This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique. SCM and SSRM measurements evidence a p-type conductive channel as well as a pn-junction beneath the AlN/Si interface. The diffusion depths of Al and Ga atoms obtained by Secondary Ion Mass Spectroscopy (SIMS) are in good agreement with those deduced from SCM and SSRM. Sample grown at lower temperature (1000°C) exhibits a conductive channel and a junction over a shallow depth explaining its lower propagation losses in comparison with those synthesized at higher temperature (1150°C). Thus, monitoring the dopant diffusion beneath the AlN/Si interface is crucial to achieve efficient GaN-on-Si microwave power devices.

Published
2021

44. AlGaN/GaN HEMTs on AlN substrate for power electronics

Author

Mehta, Jash, Abid, Idriss, Ngo, Thi Huong, Cordier, Yvon, Medjdoub, F, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), This work was supported by the French RENATECH network, the French National grant ANR-17-CE05-00131 project called BREAKUP and the ANR-11-LABX-0014 within the national network GaNeX., Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.

Published
2021

45. DUV LEDs based on AlGaN quantum dots

Author

Brault, Julien, primary, Al Khalfioui, Mohamed, additional, Leroux, Mathieu, additional, Matta, Samuel, additional, Ngo, Thi-Huong, additional, Zaiter, Aly, additional, Courville, Aimeric, additional, Damilano, Benjamin, additional, Chenot, Sébastien, additional, Duboz, Jean-Yves, additional, Massies, Jean, additional, Valvin, Pierre, additional, and Gil, Bernard, additional

Published
2021
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46. Activité électrique de l'interface AlN/Si: identification de l'origine principale des pertes de propagation en hyperfréquences dans les composants GaN sur Silicium

Author

Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, Nicolas, Garcia barros, Maxime, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Rémi, Ngo, Thi Huong, Alquier, Daniel, Cordier, Yvon, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), This work was supported by the technology facility network RENATECH and the French National Research Agency (ANR) through the projects ASTRID GoSiMP (ANR-16-ASTR-0006-01) and the 'Investissement d’Avenir' program GaNeX (ANR-11-LABX-0014)., Renatech Network, ANR-16-ASTR-0006,GoSiMP,Optimisations combinées par l'épitaxie pour composants hyperfréquences de puissance GaN sur Silicium(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. AlN/Si structures are grown by Metalorganic Vapor Phase Epitaxy. Acceptor dopant in-diffusion (Al and Ga) into the Si substrate is studied by Secondary Ion Mass Spectroscopy and is mainly located in the first 200 nm beneath the interface. In this region, an acceptor concentration of a few 1018cm-3 is estimated from Capacitance-Voltage (C-V) measurements while the volume hole concentration of several 1017 cm-3 is deduced from sheet resistance. Furthermore, the combination of scanning capacitance microscopy and scanning spreading resistance microscopy enables the 2D profiling of both the p-type conductive channel and the space charge region beneath the AlN/Si interface. We demonstrate that samples grown at lower temperature exhibit a p-doped conductive channel over a shallower depth which explains lower propagation losses in comparison with those synthesized at higher temperature. Our work highlights that this p-type channel can increase the propagation losses in the high-frequency devices but also that a memory effect associated with the previous sample growths with GaN can noticeably affect the physical properties in absence of proper reactor preparation. Hence, monitoring the acceptor dopant in-diffusion beneath the AlN/Si interface is crucial for achieving efficient GaN-on-Si microwave power devices.

Published
2020

49. Carotenoid producing Bacillus aquimaris found in chicken gastrointestinal tracts

Author

Do Thi Viet Huong, Nguyen Hoa Anh, Pham Thi Thu Huong, Tran Thi Luong, Quach Thi Ha Van, Nguyen Thi Van Anh, Bui Thi Viet Ha, Ngo Thi Huong, and Phan Tuan Nghia

Subjects
chemistry.chemical_classification, chemistry, Food science, Biology, Carotenoid, Bacillus aquimaris
Abstract

Pigmented spore-forming bacterial strains were isolated from the gastrointestinal tracts of chickens for screening for heat-stable carotenoid-producing strains that could be applied as feed supplements. Of the seven heat-stable pigmented isolates screened, only two, yellow Sporosarcina saromensis CH1 and red-orange Bacillus aquimaris CH9, produced pigments with typical carotenoid absorbance peaks (400–500 nm). The CH9 carotenoids exhibited higher scavenging activity (73.2%) of DPPH free radicals than the CH1 carotenoids (35.9%) and carotenoids of the reference B. indicus HU36 strain (78.4%), in comparison to 100% activity of acid ascorbic at 18.75 M as the standard. The CH9 strain produced high levels of carotenoids (439 g [g DW]-1) and formed nearly 100% spores, whereas the CH1 strain produced low levels of carotenoids (92 g [g DW]-1) and only achieved 30% sporulation. Chromatographic and spectral profiles of the carotenoids found in CH9 indicated the presence of as many as 11 different carotenoid types closely related to 1-HO-demethylspheroidene and keto/hydroxyl derivatives of  carotene. We successfully produced concentrated orange CH9 spore powder at a high concentration of 6.1 × 1011 CFU g-1; these spores were much more heat-stable (66% survival at 80°C for 20 min) than the reference B. indicus HU36 spores (9% survival at 50°C for 20 min). In conclusion, B. aquimaris CH9 is a promising probiotic carotenoid-producing strain, with heat-stable spores that should withstand the heat-treatment processing required for feed and food supplement production.

Published
2018

50. Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

Author

Frayssinet, Eric, primary, Nguyen, Luan, additional, Lesecq, Marie, additional, Defrance, Nicolas, additional, Garcia Barros, Maxime, additional, Comyn, Rémi, additional, Ngo, Thi Huong, additional, Zielinski, Marcin, additional, Portail, Marc, additional, De Jaeger, Jean-Claude, additional, and Cordier, Yvon, additional

Published
2020
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