89 results on '"O'Sullivan, B.J."'
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2. Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
3. Shallow electron traps in high-k insulating oxides
4. When should we test for voltage-gated potassium channel complex antibodies? A retrospective case control study
5. Atomic and Electrical Characterisation of Amorphous Silicon Passivation Layers
6. Passivation of a Metal Contact with a Tunneling Layer
7. First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO₂
8. STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application
9. Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
10. Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer
11. Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
12. Electrical characterization of HfO 2 films obtained by UV assisted injection MOCVD
13. Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source
14. Interface of tantalum oxide films on silicon by UV annealing at low temperature
15. Investigation of TiO 2-doped HfO 2 thin films deposited by photo-CVD
16. Characterisation of HfO 2 deposited by photo-induced chemical vapour deposition
17. Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices
18. Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
19. Flat band voltage shift and oxide properties after rapid thermal annealing
20. Lysophosphatidic Acid Drives Recruitment and Fibroblastic Differentiation of Mesenchymal Stromal Cells in Chronic Lung Allograft Dysfunction
21. Accumulation of Intragraft CD15s+Tregs in Long-term Lung Transplant Survivors
22. Quantification of metal oxide semiconductor field effect transistor device reliability with low-[V.sub.t] lanthanum-incorporated high permittivity dielectrics
23. Reliability study of [La.sub.2][O.sub.3] capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
24. Improving the low-frequency noise performance of input/output DRAM peripheral pMOSFETs
25. Gate stack engineering to enhance high-κ/metal gate reliability for DRAM I/O applications
26. Process simplification for 15.6×15.6 cm2 interdigitated back contact silicon solar cells by laser doping
27. Analysis of P(sub b) centers at the Si(III)/SiO2 interface following rapid thermal annealing
28. (507) - Accumulation of Intragraft CD15s+Tregs in Long-term Lung Transplant Survivors
29. (79) - Lysophosphatidic Acid Drives Recruitment and Fibroblastic Differentiation of Mesenchymal Stromal Cells in Chronic Lung Allograft Dysfunction
30. Passivation of a Metal Contact with a Tunneling Layer
31. ALD-Al2O3 Passivation for Solar Cells: Charge Investigation
32. Ozone Base Cleaning: Impact on High Efficiency Interdigitated Back Contact Solar Cells
33. Electrical characterisation of HfO2 films obtained by UV assisted injection MOCVD
34. Interdigitated rear contact solar cells with amorphous silicon heterojunction emitter
35. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
36. Oxygen-Vacancy-Induced Vt shift in La-containing Devices
37. Estimation of fixed charge densities in hafnium-silicate gate dielectrics
38. Cross-wafer controlled interface layer thickness variation, and its application to SiO2 / high-¿ stack characterisation
39. On the Recovery of Simulated Plasma Process Induced Damage in High-κ Dielectrics
40. Interface of ultrathin HfO2 films deposited by UV-photo-CVD
41. Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
42. Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
43. Ubiquitous relaxation in BTI stressing—New evaluation and insights.
44. Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack.
45. A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack.
46. On the Recovery of Simulated Plasma Process Induced Damage in High-κ Dielectrics.
47. Cross-wafer controlled interface layer thickness variation, and its application to SiO2 / high-κ stack characterisation.
48. Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation
49. Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source
50. Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid Source
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