27 results on '"Olson, B. V."'
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2. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices.
3. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices.
4. Post growth annealing study on long wavelength infrared InAs/GaSb superlattices.
5. Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors
6. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices
7. Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers
8. Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices
9. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices
10. Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers
11. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices
12. Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure
13. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
14. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
15. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
16. Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices
17. Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs
18. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1-xSbx type-II superlattices.
19. Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
20. Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
21. All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
22. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1-xSbx type-II superlattices.
23. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors.
24. Annealing effect on the long wavelength infrared InAs/GaSb superlattice materials
25. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
26. The role of InAs thickness on the material properties of InAs/GaSb superlattices
27. Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices
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