20 results on '"Omprakash, Anup P."'
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2. Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam
3. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
4. A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology
5. DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures
6. The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology
7. Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits
8. Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures
9. Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs
10. Predicting hard failures and maximum usable range of sige HBTs
11. An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology
12. Operation of SiGe HBTs Down to 70 mK
13. Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs
14. Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology
15. On the potential of using SiGe HBTs on SOI to support emerging applications up to 300°C
16. On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology
17. Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology
18. On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology
19. A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K
20. A 0.8 THz fMAX SiGe HBT Operating at 4.3 K.
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