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1. Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Author

Jian Lin and Dongge Ma

Subjects
Organometallic compounds -- Electric properties, Organometallic compounds -- Design and construction, Quinoline -- Chemical properties, Quinoline -- Electric properties, Holes (Electron deficiencies) -- Analysis, Physics
Abstract

The fabrication and characterization of stable negative differential resistance (NDR) devices based on tris(8-hydroxyquinoline) aluminum ([Alq.sub.3]) are described. The studies have shown that injection of holes in these devices have played a vital role in NDR and resistive switching processes.

Published
2008

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