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Shunt resistance R sh is a critical parameter for photovoltaic cells designed for low light indoor applications because it negatively affects the open circuit voltage, fill factor, and conversion efficiency. Standard CIGS cells are known to have low R sh and are, therefore, unpromising candidates for indoor energy sources. In this paper, we extend the original work of Virtuani et al. by determining the electrical specifications of many CIGS cells with copper contents [Cu]/([Ga]+[In]) as low as 0.33 and gallium contents between 0.28 and 0.81. First, IV data are fitted by a standard single-diode electrical circuit model for each illumination, resulting in light-dependent parameters. Then, we use a procedure based on a single dataset of electrical variables, i.e., independent of light, corrected by the experimental collection function, which captures light-dependent physical mechanisms. In this way, we are able to correctly reproduce the illuminance dependence of the electrical response of the PV cell over three orders of magnitude, in particular with a fixed value of the shunt resistance. The highest R sh is obtained with a low copper composition of 0.5 , regardless of the gallium composition. [ABSTRACT FROM AUTHOR]

Tin-based perovskite solar cells are expected to replace lead-based perovskite solar cells to achieve environmentally friendly devices. Currently, a significant challenge lies in low filling factor and short-circuit current density, leading to an overall lower efficiency of these cells. In this context, we conducted a comprehensive comparative study on the deposition of these three inorganic small-molecule materials (CsBr, CsCl, CsI) on tin-based perovskite layers. The results showed that depositing these three inorganic small-molecule materials (CsBr, CsCl, CsI) on tin-based perovskite layers can improve the topography of the thin film and display an increased grain size. Simultaneously, the presence of the passivation layer facilitates preferred crystal orientation and enhanced charge carrier transport capabilities. Furthermore, devices with passivation layers exhibit reduced series resistance and increased shunt resistance, leading to a higher filling factor, a higher short-circuit current density, and a reduced leakage current in the passivated devices. This results in an elevated overall conversion efficiency of the devices. Notably, among the three halide materials employed for passivation, CsI demonstrates the most effective passivation, with the champion device achieving an efficiency of 6.0%. This study contributes valuable insights into the passivation strategies for tin-based perovskite solar cells. [ABSTRACT FROM AUTHOR]

The main challenge for solar cell devices is harvesting photons beyond the visible by reaching the red-edge (650–780 nm). Dye-sensitized solar cell (DSSC) devices combine the optical absorption and the charge separation processes by the association of a sensitizer as a light-absorbing material (dye molecules, whose absorption can be tuned and designed) with a wide band gap nanostructured semiconductor. Conformational and environmental effects (i.e., solvent, pH) can drastically influence the photophysical properties of molecular dyes. This study proposes a combined experimental and computational approach for the comprehensive investigation of the electronic and vibrational properties of a unique class of organic dye compounds belonging to the family of red-absorbing dyes, known as squaraines. Our focus lies on elucidating the intricate interplay between the molecular structure, vibrational dynamics, and optical properties of squaraines using state-of-the-art density functional theory calculations and spectroscopic techniques. Through systematic vibrational and optical analyses, we show that (i) the main absorption peak in the visible range is influenced by the conformational and protonation equilibria, (ii) the solvent polarity tunes the position of the UV–vis absorption, and (iii) the vibrational spectroscopy techniques (infrared and Raman) can be used as informative tools to distinguish between different conformations and protonation states. This comprehensive understanding offers valuable insights into the design and optimization of squaraine-based DSSCs for enhanced solar energy conversion efficiency. [ABSTRACT FROM AUTHOR]

A large open-circuit voltage (VOC) deficit is the major challenge hindering the efficiency improvement of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Cation substitution, or doping, is usually an effective strategy to achieve carrier regulation and improve efficiency. In this work, we developed a rare-earth element lanthanum (La) doped CZTSSe thin-film solar cell by directly introducing La3+ ions into the CZTS precursor solution. Such a proposed La doping approach could effectively enhance light harvesting, adjust the bandgap, and increase the electron diffusion length. Furthermore, appropriate concentrations of La doping can reduce harmful defect cluster. Benefiting from the La doping, the VOC significantly increases from 431 to 497 mV. Consequently, the power conversion efficiency is enhanced significantly from 6.54% (VOC = 431 mV, JSC = 25.50 mA/cm2, FF = 58.28%) for the reference cell to 10.21% (VOC = 497 mV, JSC = 35.20 mA/cm2, FF = 58.41%) for the optimized La-doped cell. This research provides a new direction for enhancing the performance of CZTSSe cells, offering promising prospects for the future of CZTSSe thin-film solar cells. [ABSTRACT FROM AUTHOR]

We present a comprehensive analysis of the structure–property relationship in small molecule non-fullerene acceptors (NFAs) featuring an acceptor–donor–acceptor configuration employing state-of-the-art quantum chemical computational methods. Our focus lies in the strategic functionalization of halogen groups at the terminal positions of NFAs as an effective means to mitigate non-radiative voltage losses and augment photovoltaic and photophysical properties relevant to organic solar cells. Through photophysical studies, we observe a bathochromic shift in the visible region for all halogen-functionalized NFAs, except type-2, compared to the unmodified compound. Most of these functionalized compounds exhibit exciton binding energies below 0.3 eV and ΔLUMO less than 0.3 eV, indicating their potential as promising candidates for organic solar cells. Selected candidate structures undergo an analysis of charge transport properties using the semi-classical Marcus theory based on hopping transport formalism. Molecular dynamics simulations followed by charge transport simulations reveal an ambipolar nature of charge transport in the investigated NFAs, with equivalent hole and electron mobilities compared to the parent compound. Our findings underscore the crucial role of end-group functionalization in enhancing the photovoltaic and photophysical characteristics of NFAs, ultimately improving the overall performance of organic solar cells. This study advances our understanding of the structure–property relationships in NFAs and provides valuable insights into the design and optimization of organic solar cell materials. [ABSTRACT FROM AUTHOR]

Alloying CdTe absorbers with Se is a critical advancement for the fabrication of highly efficient CdTe thin-film solar cells. Herein, the role of the Se concentration gradient in CdSexTe1−x/CdTe solar cells is stressed in addition to the decreased bandgap and passivation effect of Se. The buried graded CdSexTe1−x at the front interface of the device was stripped and analyzed by quasi in situ x-ray photoelectron spectroscopy depth profiling. A serial shift of Fermi level toward the valence band was probed as the Se concentration decreased in the graded CdSexTe1−x absorber, revealing the presence of n-type CdSexTe1−x region near the front contact. Kelvin probe force microscopy characterizations and voltage-dependent photocurrent collection analysis further confirmed the existence of a buried junction in the graded CdSexTe1−x absorber. The CdS-free CdTe solar cell with a graded CdSexTe1−x/CdTe absorber fabricated in this study showed an efficiency of 17.6%. These results indicated that the non-uniform distribution of Se introduced a built-in field in the graded CdSexTe1−x absorber and enabled efficient separation of photogenerated carriers, yielding high-performance CdTe solar cells in the absence of a conventional n-type CdS window layer. This study deepened the understanding of the performance enhancement in Se-containing CdTe solar cells and provided new ideas for further performance optimization. [ABSTRACT FROM AUTHOR]

Presented here is the optimization of a planar two-terminal perovskite/silicon tandem solar cell with a texture structure. The developed simulation model is fitted to published experimental results, and the importance of current matching in the two-terminal structure is discussed. With the texture structure optimized and considering current matching, the optimal texture structure improves J s c from 17.9 to 20.87 mA/cm 2 compared to the planar structure, as well as improving the power conversion efficiency from 25.8% to 35.9%. Furthermore, if the quality of the perovskite thin film and tunneling junction efficiency with a smaller voltage penalty can be improved, then the efficiency can be further improved to 38.13%. This indicates that this tandem solar cell still has much room for improvement. [ABSTRACT FROM AUTHOR]

We investigate magnetron-sputtered In2(OxS1−x)3 compounds acting as an alternative buffer system to the solution-grown CdS or Zn(O,S) buffer layers in Cu(In,Ga)Se2 (CIGS) thin-film solar cells. The influence of the oxygen content on the solar cell performance, microstructure of the mixed systems, bandgap, and band offsets to CIGS is investigated experimentally and also characterized by calculations based on density functional theory. Samples in a series with different chemical compositions ranging from In2S3 to In2O3 are either directly deposited from ceramic targets or from a pure In2S3 target by reactive sputtering by adding O2 in the Ar sputtering gas. The binary compounds In2S3 and In2O3 sputtered at 220 °C substrate temperature from ceramic targets exhibit a crystalline structure, whereas the ternary In2(O,S)3 compounds are either nanocrystalline in the case of In2(O0.25S0.75)3 or amorphous for In2(O0.5S0.5)3 and In2(O0.75S0.25)3. For [O]/([O] + [S]) ratios above 0.25, the cell efficiencies decrease drastically, mainly due to lower open-circuit voltages (VOC). This behavior can be explained by an increase of the negative conduction band offset between the CIGS absorber and the oxygen-rich In2(OxS1−x)3 or In2O3 buffer, resulting in pronounced VOC losses. Adding oxygen to In2S3 with optical bandgap energies of around 2 eV results in a bowing of the values to below 2 eV and finally reaching values of around 2.7 eV for In2O3 if an indirect band transition is assumed. In summary, our results reveal that pronounced oxygen incorporation in In2S3 is not beneficial in terms of CIGS device efficiency because oxygen is electronically inactive and poorly miscible. [ABSTRACT FROM AUTHOR]

Polymers are known to wet nanopores with high surface energy through an atomically thin precursor film followed by slower capillary filling. We present here light interference spectroscopy using a mesoporous membrane-based chip that allows us to observe the dynamics of these phenomena in situ down to the sub-nanometer scale at milli- to microsecond temporal resolution. The device consists of a mesoporous silicon film (average pore size 6 nm) with an integrated photonic crystal, which permits to simultaneously measure the phase shift of thin film interference and the resonance of the photonic crystal upon imbibition. For a styrene dimer, we find a flat fluid front without a precursor film, while the pentamer forms an expanding molecular thin film moving in front of the menisci of the capillary filling. These different behaviors are attributed to a significantly faster pore-surface diffusion compared to the imbibition dynamics for the pentamer and vice versa for the dimer. In addition, both oligomers exhibit anomalously slow imbibition dynamics, which could be explained by apparent viscosities of six and eleven times the bulk value, respectively. However, a more consistent description of the dynamics is achieved by a constriction model that emphasizes the increasing importance of local undulations in the pore radius with the molecular size and includes a sub-nanometer hydrodynamic dead, immobile zone at the pore wall but otherwise uses bulk fluid parameters. Overall, our study illustrates that interferometric, opto-fluidic experiments with mesoporous media allow for a remarkably detailed exploration of the nano-rheology of polymeric liquids. [ABSTRACT FROM AUTHOR]

Atmospheric plasma etching (APE) has been used to texture Si surfaces due to anisotropic material removal capability. Controlling features and size of the light-trapping structure are keys to improving the reflection performance of silicon (Si) solar cells, which need to fully understand the interfacial etching behavior and the microscopic topography formation mechanism of the Si surface. In this study, microwave plasma with a temperature below 100 °C is employed to investigate the dependence of microstructure evolution on the O/F atom ratios in plasma. The results show that as the O/F atom ratios increase, the microstructure of the Si surface changes from square opening pits to spherical opening pits. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses indicate that the exciting F atoms dominate the orientation-selective etching process, causing the formation of square opening pits. The CFx and C2 radicals induce the generation of the Si interface reactive layer, resulting in the occurrence of amorphous layers and termination of the non ⟨111⟩-crystal face in APE. The exciting O atoms preferentially occupy the active site of Si surfaces, causing the isotropic etching and then the formation of spherical opening pits. In addition, the richer O atoms will weaken the anisotropic etching ability of F atoms, resulting in the etched surface trends' flattening. The insight into anisotropic etching behavior and topography formation mechanism of the silicon surface textured by atmospheric plasma is valuable for developing a new texturing approach to silicon solar cells. [ABSTRACT FROM AUTHOR]

Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional modeling and junction spectroscopy. By revisiting the ground-state structures of the boron-di-interstitial clusters (B I 2), we find that the calculated acceptor and donor levels of such defects agree well quantitatively with the carrier-induced deep-level transient spectroscopy (DLTS) hole emission signatures at 0.43 and 0.53 eV above the valence band edge (E v), respectively. We also find that the formation of B I 2 is thermally activated by an energy of 0.50 eV, which we explain theoretically by the reduction of the migration barrier of mono-interstitials to 0.53 eV in the presence of excess minority carriers. Moreover, we discover that the B I 2 are potentially mobile with a migration barrier of 1.18 eV, contrary to the present understanding. [ABSTRACT FROM AUTHOR]

In this study, the degradation behavior of flexible GaInP/GaAs/InGaAs (IMM3J) solar cells and their metamorphic subcells under 1 MeV electron irradiation was investigated. The remaining factors such as short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum power (Pmax) were 95.62, 85.52, and 79.73%, respectively, at an irradiation fluence of 2 × 1015 e/cm2. The spectral responses of the InGaAs and GaAs subcells degraded significantly, and the InGaAs subcell experienced greater degradation than the GaAs subcell after irradiation. In addition, the current-limiting unit was switched from GaInP to InGaAs after irradiation. Defect analysis by deep-level transient spectroscopy (DLTS) revealed that with increasing irradiation fluence, the defects that had the greatest impact on the performance of GaAs subcells were EV + 0.36 and EV + 0.42 eV. For InGaAs subcells, the defects that had the greatest impact on the performance were EV + 0.29 and EV + 0.24 eV. The decrease in the minority carrier lifetime is the main reason for the decrease in the electrical performance of solar cells, and the variation in the effective minority carrier lifetime (τeff) in the subcells with the irradiation fluence was calculated based on the DLTS results. At a fluence of 2 × 1015 e/cm2, the τeff of the GaAs and InGaAs subcells decreased from 2.93 × 10−10 and 9.10 × 10−10 s to 1.56 × 10−11 and 1.60 × 10−12 s, respectively. These results provide a reference for predicting the degradation of short-circuit current and open-circuit voltage of flexible IMM3J. [ABSTRACT FROM AUTHOR]

The high built-in polarization field is a fingerprint of III-nitride heterostructures. Alloy composition and doping profile significantly affect the magnitude of the electric field present in subsequent layers, but the sign of the electric field is usually defined by substrate polarity and external bias. Here, we propose to utilize acceptor and donor doping concentrations exceeding 1020 cm−3 to obtain a high junction field that can solely abolish built-in polarization for a polar (0001) InGaN/GaN quantum well (QW). We have used photoluminescence (PL), time-resolved PL (TRPL), and contactless electroreflectance in order to gain insight into the strength of the electric field present in the grown heterostructures. Good match between expected and measured electric field values was obtained. A dramatic decrease in the luminescence lifetime for a flat QW was confirmed using TRPL. The presented results open a way to realize devices that profit from the low built-in field, like photodetectors, using abundant polar substrates. [ABSTRACT FROM AUTHOR]

We investigate microlenses that selectively focus the light on only a small fraction of all nanowires within an arrayed InP nanowire solar cell. The nano-concentration improves both the short-circuit current (J s c ) and the open-circuit voltage (V o c ) of the solar cell. For this purpose, polymethyl methacrylate microlenses with 6 μm diameter were randomly positioned on top of an arrayed nanowire solar cell with 500 nm pitch. The microlenses were fabricated by first patterning cylindrical micropillars, which were subsequently shaped as lenses by using a thermal reflow process. The quality of the microlenses was experimentally assessed by Fourier microscopy showing strong collimation of the emitted photoluminescence. By analyzing the slope of the integrated photoluminescence vs excitation density, we deduce a substantial enhancement of the external radiative efficiency of a nanowire array by adding microlenses. The enhanced radiative efficiency of the lensed nanowire array results in a clear enhancement of the open-circuit voltage for a subset of our solar cells. The microlenses finally also allow to increase the short-circuit current of our relatively short nanowires, providing a route to significantly reduce the amount of expensive semiconductor material. [ABSTRACT FROM AUTHOR]

Machine learning (ML) is effective to establish the complicated trilateral relationship among structures, properties, and photovoltaic performance, which is fundamental issue in developing novel materials for improving power conversion efficiency (PCE) of organic solar cells (OSCs). Herein, we constructed the database of 397 donor–acceptor pairs of OSCs with photovoltaic parameters and descriptor sets, which include donor–acceptor weight ratio within the active layer of the OSCs, root mean square of roughness, and 1024-bit Morgan molecular fingerprint for donor (Fp-D) and acceptor (Fp-A). The ML models random forest (RF), adaptive boosting (AdaBoost), extra trees regression, and gradient boosting regression trees were trained based on the descriptor set. The metrics determination coefficient (R2), Pearson correlation coefficient (r), root mean square error, and mean absolute error were selected to evaluate ML model performances. The results showed that the RF model exhibits the highest accuracy and stability for PCE prediction among these four ML models. Moreover, based on the decomposition of non-fullerene acceptors L8-BO, BTP-ec9, AQx-2, and IEICO, 20 acceptor molecules with symmetric A–D–A and A–π–D–π–A architectures were designed. The photovoltaic parameters of the designed acceptors were predicted using the trained RF model, and the virtual screening of designed acceptors was conducted based on the predicted PCE. The results indicate that six designed acceptors can reach the predicted PCE higher than 12% when P3HT was adopted as a donor. While PM6 was applied as a donor, five designed acceptors can achieve the predicted PCE higher than 16%. [ABSTRACT FROM AUTHOR]

The deployment of fifth-generation mobile network (5G), beyond 5G and sixth-generation mobile network platforms encounters challenges of blockage, interference, and path loss in radio mobile environments. Metasurfaces provide a promising solution to address these limitations. In this paper, we present a methodology for developing ultrathin flexible metasurface-based frequency selective surfaces (FSSs). Our approach combines thermal evaporation for metallic thin films with a macroscopic metasurface mask (something analogous to screen-printing but using thermal evaporation instead of inks). As a proof of concept, we fabricate a sub-6 GHz metasurface-based FSS using gold deposition on a flexible polyethylene terephthalate substrate. Experimental results are validated through numerical full-wave simulations using COMSOL Multiphysics and equivalent-circuit model simulations. The metasurface operates within the primary frequency band utilized in 5G networks (3–5 GHz), indicating its potential applicability across a wide range of flexible, conformal, and wearable devices. The fabricated FSS can be installed on surfaces of any shape, such as flat or curved windows, as well as on walls or other external surfaces. This methodology offers practical solutions for wireless communications and enhancing signal transmission in diverse environments. [ABSTRACT FROM AUTHOR]

Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH3 to etch and redeposit scattering morphologies on Ga0.5In0.5P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH3 leads to redeposition during the vapor phase HCl etching of Ga0.5In0.5P and that HCl flow rate and time exposed to HCl-PH3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (JSC) without any loss in open-circuit voltage (VOC) relative to a planar control using only a 60 s in situ texturing treatment. [ABSTRACT FROM AUTHOR]

We report on the application of solution-based p-type electrical doping using 12-molybdophosphoric acid hydrate (PMA) to the fabrication of organic tandem solar cells. Such a doping approach leads to a spatially confined vertical doping profile down to a limited depth from the surface of polymer films, thus allowing the hole-collecting component of the charge recombination stack to be embedded in the photoactive layer of the bottom sub-cell. This simplifies the device architecture by removing the need for an extra dedicated hole-collecting layer. It is shown that this novel charge recombination stack comprising a PMA-doped bottom photoactive layer and a trilayer of Ag/AZO/PEIE is compatible with a solution-processed top photoactive layer. The fabricated inverted organic tandem solar cells exhibit an open-circuit voltage that is close to the sum of the open-circuit voltages of the individual sub-cells, and a fill factor that is close to the better fill factor of the two sub-cells. [ABSTRACT FROM AUTHOR]

Purpose: To assess the influence of the bonding system and restora5ve material on the marginal integrity and pull-off forces of monolithic all-ceramic crowns bonded to 5tanium base (5-base) abutments. Materials and Methods: A total of 108 5-bases were sandblasted and divided into nine experimental groups (n = 12) according to the combina5on of crown material (polymer-infiltrated ceramic-network [PI], lithium-disilicate [LD], and zirconia [ZI]) and bonding system (Mul5link Hybrid-Abutment [MH], Panavia V5 [PV], RelyX Ul5mate [RU]) with the respec5ve primers. AXer bonding the crowns to the 5-base abutments, the restora5ons were screw-retained on implants and thermomechanically aged (1,200,000 cycles, 49 N, 1.67 Hz, 5 to 55°C). Marginal integrity and bonding failures were evaluated under a light microscope, and pull-off forces (N) were calculated. Chi-square tests for marginal integrity as well as one-way and two-way ANOVA sta5s5cal tests for pull-off forces were applied (α = .05). Results: PI presented higher marginal integrity than LD (P = .023). Bonding system PV revealed higher marginal integrity than MH (P =.005) and RU (P =.029). Differences in pull-off forces were found between restora5ve material and resin cements (P < .001), with the highest values for ZI + RU (598 ± 192 N), PI + PV (545 ± 114 N), LD + MH (532 ± 116 N), and PI + RU (528 ± 81 N). Specimens with marginal integrity revealed higher pull-off forces than those with altera5on (P = .006). Specimens presen5ng bonding failures (micromovements) showed lower pull-off forces than those without bonding failures (P < .001). Conclusions: The tested CAD/CAM materials show favorable bonding performances with different bonding systems, nevertheless for each restora5ve material a specific bonding system has to be recommended. [ABSTRACT FROM AUTHOR]

Detailed characterization of deep-level color centers requires understanding their electronic and atomic structure, which is most commonly investigated utilizing the Kohn–Sham density functional theory. Standard semilocal functionals based on the generalized gradient approximation (GGA) are inclined toward an imprecise quantitative description of defects' electronic structure. Hybrid functionals provide an improved prediction of electronic properties, albeit at a much higher computational cost. In this work, we test the newly developed Strongly Constrained and Appropriately Normed (SCAN) family of meta-GGA density functionals for selected color centers in diamond. In particular, we study nitrogen-, silicon-, germanium-, and tin-vacancy centers that have been recently investigated for their use in quantum technological applications. We show that SCAN and its derivatives, the rSCAN and r2SCAN functionals, significantly improve the calculated energies of optical transitions within the delta-self-consistent-field approach, almost reaching the accuracy of the hybrid Heyd–Scuseria–Ernzerhof (HSE) functional. In the case of the NV− center, we also show that the SCAN family of functionals improves the description of the adiabatic potential energy surfaces compared to both GGA and hybrid functionals, improving calculated luminescence lineshapes. As a result of these findings, we recommend using the SCAN family of functionals as a promising alternative for studying color centers in solids. [ABSTRACT FROM AUTHOR]

Developing dyes with high open-circuit photovoltage (Voc) is a vital strategy to improve the power conversion efficiency (PCE) of co-sensitized solar cells (co-DSSCs). Herein, three organic fluorine-containing dyes [YY-ThP(3F), YY-ThP(2F), and YY-ThP(26F)] are designed and synthesized for investigating the fluorine-induced effect on photophysical and photovoltaic performances. Consequently, this effect can significantly broaden the UV–vis absorption spectra of dyes but fail to improve the light-harvesting capability of DSSCs. Strikingly, YY-ThP(3F), featuring 3-position fluorine substitution to cyanoacrylic acid, yields a relatively high Voc compared to the corresponding fluorine-free dye (YY-ThP). Furthermore, the co-sensitization of YY-ThP+YY-ThP(3F) achieves a remarkably high PCE and long-term stability. This work implies that the combination of judicious molecular engineering and co-sensitization is a promising strategy for highly efficient and stable DSSCs. [ABSTRACT FROM AUTHOR]

Photoluminescence imaging under sunlight excitation has in the recent years been proposed as a promising inspection technique of field-installed photovoltaic modules. Virtually, all studies have been conducted in full sunlight and clear sky conditions. A study in which photoluminescence images had been acquired at an irradiance level below 100 W m−2 using the lock-in technique has shown the potential of these images with respect to defect analysis. Additionally, as on-site measurement techniques are subject to weather conditions, it would be favorable to extend the applicability of photoluminescence imaging to a wider range of irradiance levels. A method for photoluminescence imaging which does not use the lock-in technique for the purpose of filtering of sunlight was proposed recently. The present study extends the application of this approach to diffuse irradiance conditions. We demonstrate that the method gives valuable information about the modules also in the case of image acquisition under diffuse global in-plane irradiance as low as 40 W m−2. Photoluminescence images acquired under low irradiance are comparable to electroluminescence images acquired at 10% of short-circuit current. Photoluminescence imaging has also been conducted successfully from the rear of bifacial modules in these illumination conditions. [ABSTRACT FROM AUTHOR]

We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE) through the use of a low substrate temperature of 420 °C and subsequent elimination of surface segregation. First, a Te surface pre-dose layer and reduced substrate temperature were required to achieve abrupt profiles at doping >1 × 1018 cm−3 in calibration samples, while reduced doping of 5.7 × 1017 cm−3 did not require the surface layer. Next, we demonstrate front-junction n+/p GaInP cells with an improved internal quantum efficiency (IQE) after Te doping of the n-type emitter directly attributable to an ∼2.5× higher carrier diffusion length, with IQE-derived short-circuit current density increasing from 13.2 to 14.1 mA/cm2. Rapid thermal annealing further boosted the performance through improvements in the minority carrier lifetime of the p-GaInP base. The use of low substrate temperature in MBE-grown GaInP enables abrupt Te doping profiles to be attained in a straightforward manner and is promising for both solar cells and tunnel junctions. [ABSTRACT FROM AUTHOR]

We studied photoinduced charge transfer (CT) states and their dissociation processes at the donor/acceptor (D/A) interface of PTB7/BTAx (x = 1 and 3) nonfullerene organic thin-film solar cells using density functional theory (DFT) and time-dependent DFT calculations. We focused on the CT distances and electron coupling in the CT state generated by photoexcitation and the Huang–Rhys (HR) factors that describe the nonadiabatic processes associated with vibronic interactions. The PTB7/BTA3 system with a large short-circuit current density (JSC) exhibited a large charge CT distance and electronic coupling. Contrastingly, the PTB7/BTA1 system with a low JSC has a large HR factor because of the low-wavenumber vibrational modes in the CT state of the D/A complex and is prone to nonadiabatic relaxation to the ground state. Systematic theoretical analysis of the excitonic states in the D/A complex has provided insight into the control of CT exciton dynamics, namely JSC and electron–hole recombination. [ABSTRACT FROM AUTHOR]

GaSb grown on GaAs through interfacial misfit (IMF) arrays grown via molecular beam epitaxy has been heavily studied; there is limited research, however, on IMF growth through metal-organic vapor phase epitaxy. To demonstrate viability for integration in a multijunction solar cell for terrestrial use, it is imperative to demonstrate high quality GaSb grown on GaAs through metal-organic vapor phase epitaxy. The preferred gallium precursors for n-type and p-type GaSb for longest minority carrier diffusion length were determined to be trimethylgallium and triethylgallium, respectively. A heteroepitaxial GaSb-on-GaAs device attained an open-circuit voltage of 190 mV and an efficiency of 2.2%. Extracted threading dislocation density from the minority carrier lifetime for the heteroepitaxial GaSb-on-GaAs device was determined to be 7.5 × 10 6 cm − 2 . In a modeled multijunction solar cell, this device attributes to an overall efficiency of 33.1% under AM1.5g illumination. [ABSTRACT FROM AUTHOR]

This work deals with the simulation of a perovskite solar cell with structure, ITO/SnO2/MAPbI 3 − x Clx/Spiro-MeOTAD/Ag using SCAPS-1D software. The optimization of absorber thickness and carriers' lifetime results in PCE = 1 9. 7 0 % ( V oc = 1. 1 4 V, J sc = 2 4. 3 1 mA/cm2 and FF = 7 0. 8 8 %). The same structures are also analyzed without ETL and HTL for making cost-effective solar cell. The efficiencies for both ETL and HTL free structures are found to be 17.42% and 9.98%, respectively. Further, the optimization of gradient doping shows a significant increment in performance parameters i.e. PCE = 2 4. 4 2 % ( V oc = 1. 1 9 V, J sc = 2 3. 9 8 mA/cm2 and FF = 8 4. 8 4 %). Moreover, the analysis of various factors like average doping concentration, number of absorber sublayers, recombination velocities and temperature on the cell performance are performed to examine device stability. Present observations suggest that by considering only two sublayers, one can achieve the highest cell performance by using the gradient doping method. We have also validated the cell performance by comparing it with the experimental results and found a good agreement in both. Our findings may provide an effective route to fabricate highly efficient solar cell devices. [ABSTRACT FROM AUTHOR]

This paper considers an electric-hydrogen hybrid energy storage system composed of supercapacitors and hydrogen components (e.g., electrolyzers and fuel cells) in the context of a microgrid with photovoltaic generators. To manage the power and hydrogen flows within the microgrid and coordinate the coupling between the microgrid and a hydrogen refueling station, this paper proposes an energy management framework. The outer layer of the framework takes the hydrogen compressor power as part of the microgrid load and optimizes the hydrogen flow from the microgrid to the hydrogen refueling station. The inner layer develops a two-stage scheme to optimize the power allocation between the electric and hydrogen systems within the microgrid. A low pass filter with an adaptive cutoff frequency is utilized to split the net load power of the microgrid into high-frequency and low-frequency components, which are then assigned to the electric and hydrogen systems, respectively. The adaptive cutoff frequency is determined based on the power split factor tuned twice during the two stages of the power allocation scheme based on the supercapacitor state of charge. The effectiveness of the proposed framework is validated by performing real-time simulations using a dSPACE platform. • Proposes an energy management framework for electric-hydrogen systems. • Optimizes the hydrogen flow from the microgrid to the hydrogen refueling station. • Develops a two-stage power allocation scheme based on artificial potential field. • Validates the framework using a dSPACE DS1202 real-time simulation system. [ABSTRACT FROM AUTHOR]

All‐polymer solar cells have experienced rapid development in recent years by the emergence of polymerized small molecular acceptors (PSMAs). However, the strong chain entanglements of polymer donors (PDs) and polymer acceptors (PAs) decrease the miscibility of the resulting polymer mixtures, making it challenging to optimize the blend morphology. Herein, we designed three PAs, namely PBTPICm‐BDD, PBTPICγ‐BDD and PBTPICF‐BDD, by smartly using a BDD unit as the polymerized unit to copolymerize with different Y‐typed non‐fullerene small molecular acceptors (NF‐SMAs), thus achieving a certain degree of distortion and giving the polymer system enough internal space to reduce the entanglements of the polymer chains. Such effects increase the chances of the PD being interspersed into the acceptor material, which improve the solubility between the PD and PA. The PBTPICγ‐BDD and PBTPICF‐BDD displayed better miscibility with PBQx‐TCl, leading to a well optimized morphology. As a result, high power conversion efficiencies (PCEs) of 17.50 % and 17.17 % were achieved for PBQx‐TCl : PBTPICγ‐BDD and PBQx‐TCl : PBTPICF‐BDD devices, respectively. With the addition of PYFT‐o as the third component into PBQx‐TCl : PBTPICγ‐BDD blend to further extend the absorption spectral coverage and finely tune microstructures of the blend morphology, a remarkable PCE of 18.64 % was realized finally. [ABSTRACT FROM AUTHOR]

Lightweight and semi‐transparent organic solar cells (ST‐OSCs) offer bright promise for applications such as building integrated photovoltaics. Diluting donor content in bulk‐heterojunction active layers to allow greater visible light transmittance (AVT) effectively enhances device transparency, yet the ineluctable compromise of the donor‐phase continuity is challenging for efficient charge transport. Herein, a trace amount of n‐type N‐DMBI dopant is incorporated, which facilitates the donor:acceptor (D:A) de‐mixing by strengthening both acceptor polarity and D/A crystallization. With the diminution of component inter‐mixing, the limited number of donors increasingly self‐aggregate to establish the more continuous phases. For the benchmark PM6:Y6‐based ST‐OSCs, when the donor content is reduced from regular 45 to optimal 30 wt.%, the device AVT is remarkably raised by more than a quarter, accompanied by a marginal drop in power conversion efficiency from 13.89% to 13.03%. This study reveals that by decreasing the donor content to <30 wt%, acceptor excitons induced by Förster resonance energy transfer are prone to severe radiative recombination. This is nonetheless mitigated by dopant inclusion within the acceptor phase by providing extra energy offset and prolonging charge transfer state lifetime to assist exciton dissociation. [ABSTRACT FROM AUTHOR]

The reverse bias stability is a key concern for the commercialization and reliability of halide perovskite photovoltaics. Here, the robustness of perovskite‐silicon tandem solar cells to reverse bias electrical degradation down to −40 V is investigated. The two‐terminal tandem configuration, with the perovskite coupled to silicon, can improve the solar cell resistance to severe negative voltages when the tandem device is properly designed. While perovskite cells typically exhibit early reverse bias breakdown voltages, the serial connection with silicon cells with large shunt resistances and high voltage breakdown limits their negative polarization and prevent the passage of large current densities when reverse biased. The importance of careful optical design is illustrated, with bottom‐limited conditions required to prevent the perovskite top cell from exploring its own breakdown. This aspect is of great importance in the case of partial shading events when the solar spectrum is richer in the IR components than the standard AM1.5G. Notably, 100% of efficiency retained after polarization at −40 V in different stressing conditions is observed. The results presented suggest that standard industrial bypass diode schemes may be compatible with silicon/perovskite tandem photovoltaics and provide new guidelines for the standardization of the stressing protocols. [ABSTRACT FROM AUTHOR]

Energy demand has dramatically increased globally, posing a serious risk of future energy crises. While various energy sources have been utilized, solar energy has emerged as the most promising renewable option, convertible to electrical energy via solar cells. Among the developed solar cells, perovskite solar cells (PSCs) have recently received significant attentions due to their simple fabrication, high performance, and cost‐effectiveness. In particular, lead (Pb) halide‐based PSCs have achieved the highest power conversion efficiency. However, despite their excellent performance, Pb halide‐based PSCs are hindered by the toxicity of Pb in their structures. Consequently, researchers have explored germanium (Ge) and tin (Sn) halide perovskite materials for the development of Pb‐free PSCs (LFPSCs). The past few years have seen rapid advancements in the numerical simulation of LFPSCs using SCAPS software. These simulation studies are crucial for developing PSCs with enhanced performance. This mini‐review article summarizes the recent progress in the simulation of tin‐based LFPSCs. [ABSTRACT FROM AUTHOR]

A fourth-order generalized integrator (GI)-based frequency locked loop (AFOGI-FLL) controller is proposed to provide switching pulses for a three-phase IGBT-based voltage source converter. Accurate frequency synchronization, lower- and higher-order harmonic elimination, power quality refinement, and reactive power compensation are the features of the presented controller. As a renewable energy solution to meet energy demands, grid-interfaced photovoltaic systems are described in this paper. To stabilize DC link voltage, a novel ANFIS-based hybrid intelligent controller is proposed. In addition, a comparative analysis has been performed between the proposed controller and the third-order generalized integrator (TOGI). The comparative analysis results show that fourth-order generalized integrator has higher DC offset elimination capability and better dynamic performance as well and THD is less compared with the TOGI controllers. The THD of the proposed controller is 1.10% which is less than the IEEE standard. The proposed controller robustness is validated by an experimental prototype setup and test results exhibit the performance under non-linear loading. Additionally, the feasibility of the proposed control scheme is demonstrated by using MATLAB/SIMULINK software. The system is well executed under irradiance variations, load fluctuations, and frequency variations as well. The laboratory prototype is used to demonstrate the proposed system's simulated behavior and experimental test results. [ABSTRACT FROM AUTHOR]

This work provides a new mathematical model of photovoltaic (PV) solar panels integrated with proton exchange membrane (PEM) water electrolyzer cells for optimal hydrogen production. The proposed mathematical model evaluates the operating temperature of the PV solar panel and PEM water electrolyzer and the effect of membrane thickness on hydrogen production performance. In the model results, when the operating temperature of the PEM water electrolyzer increased from 25 °C to 80 °C, the hydrogen flow rate of about 1.44 and 1.82 mL/min at 2 A/cm2, respectively. Moreover, the maximum flow rate of hydrogen produced in a 7-cell and 14-cell PV-assisted PEM water electrolyzer stack is around 349.98 mL/min and 699.91 mL/min, respectively. The total efficiency of the integrated PV-assisted PEM water electrolyzer stack is around 6.0–6.5%, depending on the solar irradiance values. This mathematical model significantly contributes to green hydrogen production using the integrated PV-assisted PEM water electrolyzer system. Moreover, the mathematical model of PV-assisted PEM water electrolyzer will be a pioneer in determining the hydrogen production potential of the PEM water electrolyzer systems. • Evaluation of a new mathematical model of hydrogen production with PV-assisted PEM water electrolyzer. • Mass transfer modeling for single-cell PEM water electrolyzer is presented. • The hydrogen production rate relies on solar irradiation, temperature, and membrane thickness. • The efficiencies of PEM water electrolyzer and PV module are ∼65.5% and ∼15.37%, respectively. • Total average hydrogen production with a PV-assisted PEM water electrolyzer is ∼9.970 mL/min. [ABSTRACT FROM AUTHOR]

As demand for clean energy continues to increase, scientists are exploring alternative sources to fossil fuels, which are a major contributor to climate change. Hydrogen (H 2) has been identified as a promising solution due to its ability to be derived from water-splitting using electricity, solar, or thermal energies. Solar water-splitting is a conventional and eco-friendly approach for producing green H 2 with high energy storage capacity among various power sources. Perovskite (PSK) minerals have emerged as a popular choice for H 2 production due to their unique optoelectronic properties, including high carrier mobility, tunable bandgap, and strong light absorption. These properties make PSK materials suitable for perovskite-based H 2 generation processes, including photocatalytic, electrocatalytic, photo-electrocatalytic, and thermochemical processes for hydrogen generation. This investigation comprehensively overviews recent breakthroughs, challenges, and perspectives in PSK-based hydrogen generation systems. We discuss the reasons behind the selection of PSK materials, including their high efficiency, stability, and low cost, as well as opportunities to enhance their performance through material optimization and device engineering. Overall, PSK-based H 2 Evolution systems hold significant promise for addressing the pressing energy and environmental challenges of our time. [Display omitted] • Perovskite materials offer high efficiency & stability, driving green H 2 production. • Solar water-splitting with PSKs enables eco-friendly H 2 generation. • Tunable bandgap & strong light absorption make PSKs ideal for H 2 systems. • Material optimization & device engineering enhance perovskite-based H 2 evolution. [ABSTRACT FROM AUTHOR]

The modernization that is currently taking over across the world is resulting in numerous advancements in a variety of industries, and the most notable and apparent development is the rising use of solar energy, which has become more prevalent every day. Most companies, residences, schools, and other organizations rely mostly on solar energy as the main source of electricity. It was discovered that anti-reflective coating (ARC) had been applied to solar cells with the goal of increasing power conversion efficiency, decreasing reflection loss, and improving absorption. Although a single layer of ARC is sufficient, applying an additional layer might improve the solar cell application's effectiveness. Hence, the modeling and analysis of double layers of anti-reflection coating (ARC) with different types of materials have been investigated and evaluated using personal computer one-dimensional (PC1D) simulation software. In this study, the double-layer anti-reflection coating on the solar cell was modeled using PC1D, where this software allowed for one-dimensional simulation of the parameters required for the operation of semiconductor-based solar energy systems. The PC1D simulation reveals that SiO2/TiO2 has the highest efficiency (22.82%) and lowest reflection compared to Si3N4/TiO2 and ZnO/TiO2. Also, SiO2/TiO2 generates the highest external quantum efficiency (EQE) among ARC double layers, making it ideal for silicon solar cell applications in order to boost the solar cell's efficiency. The results for the effects of current, voltage, reflection, and EQE of the different double layers of ARC have also been studied in this paper. [ABSTRACT FROM AUTHOR]

This paper proposes a systematic approach to enhance the performance of a 21‐level asymmetrical multilevel inverter (MLI) with less power electronics switches and DC voltage sources. In the first step (Configuration 1), the voltage level is improved at the cost of DC‐link voltage utilization. In the second step (Configuration 2), the ratio of the DC‐link voltages is modified to improve the utilization of DC‐link voltage, with an insignificant reduction of voltage levels as compared to Configuration 1. Finally, another modification of the MLI configuration is proposed (Configuration 3), by incorporating an H‐bridge in place of a T‐type module for further improvement of DC source utilization and increasing the number of voltage levels. Thus, Configuration 3 improves the inverter's total standing voltage (TSV) and efficiency. To reduce the number of DC sources, the output voltage levels are obtained in Configuration 3 by adding and subtracting the input DC sources. Moreover, conducting switches are reduced to minimize conduction loss and maximize efficiency. The DS1103‐based digital controller is used to verify the performance of the proposed configurations, which are compared with the literature‐based MLI models. [ABSTRACT FROM AUTHOR]

In response to the issue of short-term fluctuations in photovoltaic (PV) output due to Cloud movement, this paper proposes a method for forecasting short-term PV output based on a Depthwise Separable Convolution Visual Geometry Group (DSCVGG) and a Deep Gate Recurrent Neural Network (DGN). Initially, a cloud motion prediction model is constructed using a DSCVGG, which achieves edge recognition and motion prediction of clouds by replacing the previous convolution layer of the pooling layer in VGG with a depthwise separable convolution. Subsequently, the output results of the DSCVGG network, along with historical PV output data, are introduced into a Deep Gate Recurrent Unit Network (DGN) to establish a PV output prediction model, thereby achieving precise prediction of PV output. Through experiments on actual data, the Mean Absolute Error (MAE) and Mean Squared Error (MSE) of our model are only 2.18% and 5.32 x 10-5, respectively, which validates the effectiveness, accuracy, and superiority of the proposed method. This provides new insights and methods for improving the stability of PV power generation. [ABSTRACT FROM AUTHOR]

The reliability‐oriented optimized sizing and placement of electric vehicle (EV) charging stations (EVCSs) has received less attention. In addition, the literature review shows that a research gap exists regarding a clustering‐based method to optimize the allocation of DGs and EVCSs, considering the system uncertainties. This article tries to fill such a knowledge gap by proposing a new clustering‐based method to optimize the allocation of DGs and EVs simultaneously, considering the uncertainties of EV behaviours and stochastic behaviours of renewable DGs. Developing a new stochastic model for EVs using the clustering algorithm is one of the essential contributions. The uncertain parameters, e.g. EV charging loads based on EV owners' behaviours (arrival time, departure time, and driving distance) and renewable DGs, would be clustered. The proposed method could solve the execution time challenges of Monte Carlo simulation‐based approaches to concern the stochastic behaviours of smart grids. The simultaneously reliability‐oriented optimal allocation of EVCSs, DGs, and protection equipment, using the proposed clustering‐based algorithm is another main contribution. The IEEE 33‐bus test system is studied to examine the introduced method. Simulation results imply that a 1.45% accuracy improvement could be obtained compared to available analytical ones, while its execution time is appropriate. [ABSTRACT FROM AUTHOR]