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1. General Strategies for Preparing Hybrid Polymer/Quantum Dot Nanocomposites for Color Conversion

Author

Guan-Hong Chen, Chen-Te Lin, Po-Hsun Chen, Tyng-Woei Jang, and Hsueh-Shih Chen

Subjects
quantum dots, acrylate, silica–titania, sol–gel, light extraction, display, Chemistry, QD1-999
Abstract

Quantum dots (QDs), with their exceptional optical properties, have emerged as promising candidates to replace traditional phosphors in lighting and display technologies. This study delves into the integration strategies of QDs within glass and polymer matrices to engineer advanced quantum dot color converters (QDCCs) at the industrial scale for practical applications. To achieve enhancements in the photostability and thermal stability of QDCCs, we explore two distinct approaches: the dispersion of QDs in a hydrophilic glass matrix via a sol–gel process and the incorporation of QDs into a non-polar acrylate monomer to formulate QD/polymer nanocomposites. This research further investigates the optical behaviors of these composites, focusing on their light-scattering and propagation mechanisms, which are critical for optimizing light extraction efficiency in QDCCs. Additional optical film and light-scattering particles can improve color conversion efficiency by ~140%. These advancements present a significant step forward in the development of high-performance, energy-efficient, QD-based lighting and display systems.

Published
2023
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2. A Novel Variable Flux Spoke Type Permanent Magnet Motor With Swiveling Magnetization for Electric Vehicles

Author

Yin-Hui Lee, Min Fu Hsieh, and Po-Hsun Chen

Subjects
Electric vehicle, variable flux motor, magnetization, spoke type, permanent magnet synchronous motor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

This article proposes a novel variable-flux spoke-type permanent magnet synchronous motor (VFS-PMSM), whose air gap flux density can be adjusted by “swiveling” magnetic pole directions in permanent magnet (PM). This is distinctive from conventional methods that require a large magnetizing field to magnetize and demagnetize (or partially) rotor PM along the same axis for variable flux motors. This paper first compares the proposed VFS-PMSM with two other typical types, i.e., series and parallel arrangements combining high- and low-coercivity PMs to achieve variable flux. It is found that the magnetic circuit of the proposed motor is identical to that of the series type at flux enhancing and to that of the parallel type at flux weakening. Therefore, the wide flux regulation range of the parallel type motors and the excellent on-load demagnetization-resisting capability of the series type motors can both be achieved in the proposed design. Another benefit of the proposed design is that the flux produced by the low-coercivity magnet constantly or aligns with that produced by the high-coercivity one whether the motor is flux enhanced or weakened. This allows the low-coercivity magnet to maintain its operating point within a safe range. These features make the proposed design suitable for electric vehicle tractions. Finite element analysis is used to compare the performance of various types of motors and highlight the advantages of the proposed VFS-PMSM. Experiments are conducted to validate the feasibility of the low-coercivity magnet to be magnetized with the method proposed in this paper. It is found that the field strength to magnetize or demagnetize the rotor can be significantly reduced, which improves the feasibility of this design.

Published
2022
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3. A Novel Robust Sensorless Technique for Field-Oriented Control Drive of Permanent Magnet Synchronous Motor

Author

That-Dong Ton, Min-Fu Hsieh, and Po-Hsun Chen

Subjects
Sensorless, field-oriented control, permanent magnet motor drive, sensorless vector control, current estimation, rotor position estimation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

This paper proposes a novel rotor position estimation technique based on stator flux linkage to implement robust sensorless field-oriented control for permanent magnet synchronous motor drives. The proposed method can accurately estimate rotor position by mitigating the dependence on quality of the magnitude and phase angle of the estimated stator flux linkage. A high-accuracy load angle calculation based on $d$ - $q$ -axis current estimation method is first developed for further rotor position determination. In the rotor position calculation, the reference flux linkage magnitude is used instead of the estimated one to avoid the influence of potential high noise levels during low speed operation. As a result, the rotor angle estimation depends only on the phase angle of stator flux linkage, without the effect of its magnitude. The estimation accuracy can thus be improved. Also, by employing a simple stator flux linkage phase lag compensator, the performance of the proposed sensorless method can be dramatically improved at low speed. Moreover, the problem of motor parameter variation (e.g., changes in winding resistance, stator inductances, and permanent magnetic flux linkage) has been analyzed and overcome. Finally, comparisons between conventional and proposed methods are presented with simulations and experiments to demonstrate the effectiveness and reliability of the proposed method.

Published
2021
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4. Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency

Author

Chih-Cheng Yang, Po-Hsun Chen, Ting-Chang Chang, Wan-Ching Su, Sung-Yu Chen, Shui-Chin Liu, Sheng-Yao Chou, Yung-Fang Tan, Chun-Chu Lin, Pei-Yu Wu, Tsung-Ming Tsai, and Hui-Chun Huang

Subjects
High-density hydrogen treatment (HDH), Solar cell, Interface traps, SiN, Passivation layer, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Abstract In this work, a high-density hydrogen (HDH) treatment is proposed to reduce interface traps and enhance the efficiency of the passivated emitter rear contact (PERC) device. The hydrogen gas is compressed at pressure (~ 70 atm) and relatively low temperature (~ 200 °C) to reduce interface traps without changing any other part of the device’s original fabrication process. Fourier-transform infrared spectroscopy (FTIR) confirmed the enhancement of Si–H bonding and secondary-ion mass spectrometry (SIMS) confirmed the SiN/Si interface traps after the HDH treatment. In addition, electrical measurements of conductance-voltage are measured and extracted to verify the interface trap density (Dit). Moreover, short circuit current density (Jsc), series resistance (Rs), and fill factor (F.F.) are analyzed with a simulated light source of 1 kW M−2 global AM1.5 spectrum to confirm the increase in cell efficiency. External quantum efficiency (EQE) is also measured to confirm the enhancement in conversion efficiency between different wavelengths. Finally, a model is proposed to explain the experimental result before and after the treatment.

Published
2019
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5. A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Author

Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, and Simon M. Sze

Subjects
Forming voltage, temperature, rising time, charge accumulation, 1T1R, RRAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing the temperature in the forming process. However, the resulting electronic RRAM characteristics after each of these methods differ. While increasing the rising time causes greater damage to the switching layer due to longer accumulation of charge, increasing temperature in the forming process does not. The high temperature-formed RRAM excels in retention and endurance tests, proving an effective means to decrease forming voltage.

Published
2018
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6. Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall

Author

Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, and Hang Zhou

Subjects
Resistive random access memory (RRAM), HfO2-based RRAM, forming voltage, spacer, switching speed, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when the device size is scaling down from 16.0 μm2 to 0.16 μm2, which is detrimental for application of high density HfO2-based RRAM. In this study, a high permittivity side wall spacer (high-k spacer) Ta2O5 is introduced to replace SiO2 spacer. The Ta2O5 side wall effectively suppress the forming voltage rising issues during RRAM device scaling without introducing costly processing steps. Moreover, compared to the conventional HfO2-based RRAM, the side wall enhanced device exhibits faster switching speed, smaller operation voltage, and higher reliabilities, including endurance and retention. As a result, the use of Ta2O5 side wall significantly enhances the overall switching characteristics of the HfO2-based RRAM device.

Published
2018
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7. Friction and Wear Performance of Staple Carbon Fabric-Reinforced Composites: Effects of Surface Topography

Author

Chang-Mou Wu, Yi-Ching Cheng, Wen-You Lai, Po-Hsun Chen, and Tzong-Der Way

Subjects
staple carbon fiber fabric, hybrid composites, impregnation ratio, surface topography, friction and wear, Organic chemistry, QD241-441
Abstract

Here, staple carbon fiber fabric-reinforced polycarbonate (PC)- and epoxy (EP)-based composites with different impregnating resin levels were fabricated using a modified film stacking process. The effects of surface topographies and resin types on the tribological properties of stable carbon fabric composites (sCFC) were investigated. Friction and wear tests on the carbon composites were conducted under unlubricated sliding using a disk-on-disk wear test machine. Experimental results showed that the coefficient of friction (COF) of the sCFC was dominated by matrix type, followed by peak material portion (Smr1) values, and finalized with core height (Sk) values. The COF of composites decreased by increasing the sliding speed and applied pressure. This also relied on surface topography and temperature generated at the worn surface. However, the specific wear rate was strongly affected by resin impregnation. Partially-impregnated composites showed lower specific wear rate, whereas fully-impregnated composites showed a higher wear rate. This substantially increased by increasing the sliding speed and applied pressure. Scanning electron microscopy observations of the worn surfaces revealed that the primary wear mechanisms were abrasion, adhesion, and fatigue for PC-based composites. For EP-based composites, this was primarily abrasion and fatigue. Results proved that partially-impregnated composites exhibited better tribological properties under severe conditions.

Published
2020
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8. Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes

Author

Ming-Lun Lee, Yao-Hong You, Ray-Ming Lin, Cheng-Ju Hsieh, Vin-Cent Su, Po-Hsun Chen, and Chieh-Hsiung Kuan

Subjects
Light-emitting diodes (LEDs), photonic crystals (PhCs), Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

This paper demonstrates that the optimal light extraction enhancement of the 2-D photonic crystals (PhCs) light-emitting diodes (LEDs) among different air duty cycles (ADADCsCs) is independent of the geometry and the shape of the 2-D PhCs. Moreover, it also discusses that the side-directional emission property of the 2-D PhCs LEDs in hexagonal lattice arrangement (HLA) is better than that in square lattice arrangement (SLA). Finally, the light output power of the 2-D PhCs LEDs in SLA and in HLA with the ADC of 51% are significantly improved by 60.4% and 81.9%, respectively, as compared with the reference LED at an injection current of 350 mA.

Published
2014
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9. Age can be a Problem: Clostridium difficile and Cytomegalovirus Colitis Coinfection in an Immunocompetent 90-year-old Patient

Author

Po-Hsun Chen, I-Ta Lu, Bor-Jen Lee, Chen-Yu Wang, and Chien-Kuan Lee

Subjects
Clostridium difficile colitis, coinfection, cytomegalovirus colitis, Geriatrics, RC952-954.6
Abstract

Clostridium difficile colitis and cytomegalovirus colitis coinfection has been documented in immunocompromised patients. However, this kind of coinfection has rarely been reported in immunocompetent patients. We present a 90-year-old, critically ill, immunocompetent patient, who had a C. difficile and cytomegalovirus colitis coinfection. Although the common risk factors of both types of colitis are well known, clinical physicians still need to be alert to this coinfection because severe complications of CMV colitis have been reported previously. Physicians should be more aggressive in the management of elderly immunocompetent patients with refractory symptoms of colitis.

Published
2015
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10. Chemical Constituents from the Stems of Tinospora sinensis and Their Bioactivity

Author

Sio-Hong Lam, Po-Hsun Chen, Hsin-Yi Hung, Tsong-Long Hwang, Chih-Chao Chiang, Tran Dinh Thang, Ping-Chung Kuo, and Tian-Shung Wu

Subjects
Menispermaceae, lignan, pyrrole alkaloid, superoxide anion generation, elastase release, Organic chemistry, QD241-441
Abstract

Fifty-seven compounds were purified from the stems of Tinospora sinensis, including three new compounds characterized as a lignan (1), a pyrrole alkaloid (11), and a benzenoid (17), respectively. Their structures were elucidated and established by various spectroscopic and spectrometric analytical methods. Among the isolates, fifteen compounds were examined for their anti-inflammatory potential in vitro. The results showed that several compounds displayed moderate inhibition of N-formyl-methionyl-leucyl-phenylalanine/cytochalasin B (fMLP/CB)-induced superoxide anion generation and elastase release.

Published
2018
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11. Live-cell dynamic sensing of Cd(2+) with a FRET-based indicator.

Author

Tai-Yu Chiu, Po-Hsun Chen, Cha-Ling Chang, and De-Ming Yang

Subjects
Medicine, Science
Abstract

Cd(2+) causes damages to several human tissues. Although the toxicological and carcinogenetic mechanisms of Cd(2+) have been previously established, some basic questions on this toxicant remain unclear. In this study, we constructed Met-cad 1.57, a new fluorescent resonance energy transfer (FRET)-based Cd(2+) indicator, which contains a portion of a Cd(2+)-binding protein (CadR) obtained from Pseudomonas putida as the Cd(2+) sensing key. We produced a human embryonic kidney cell line HEK-MCD157 which stably expresses the Met-cad 1.57 for further investigations. Both fluorescence spectroscopy and FRET microscopic ratio imaging were used to monitor the Cd(2+) concentration within the living HEK-MCD157 cells. The dissociation constant of Met-cad 1.57 was approximately 271 nM. The function of Ca(2+) channels as a potential Cd(2+) entry gateway was further confirmed in the HEK-MCD157 cells. The organelle-targeted property of the protein-based Cd(2+) indicator directly reveals the nucleus accumulation phenomena. In summary, a human kidney cell line that stably expresses the FRET-based Cd(2+) indicator Met-cad 1.57 was constructed for reliable and convenient investigations to determine the Cd(2+) concentration within living cells, including the identification of the entry pathway of Cd(2+) and sub-cellular sequestration.

Published
2013
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13. Design of Linear Motor of Electrical Nail Gun Using Magnetic Array Approach.

Author

Ming-Hung Lin, Cheng-Che Yang, Bo-Wun Huang, Po-Hsun Chen, Bing-Hong Chen, Cheng-Yi Chen, and Cheng-Fu Yang

Subjects
PERMANENT magnets, STUN guns, FINITE element method, ELECTRIC cables, MAGNETIC fields, GYROTRONS
Abstract

Electric tools have become indispensable in various industries owing to their convenient portability, high energy efficiency, and capability to operate without being constrained by power cords when using batteries. Referring to the currently marketed ST-64 specification gas-powered or compressed-air-powered nail guns commonly used for concrete and steel beams, we propose a linear motor design with superior output power and operational speed for use in electric nail guns. The design process begins with designing and simulating the stator and mover of the motor using Altair Flux 3D finite element analysis software. The stator is a combination of permanent magnets and electromagnetic iron and designed to possess magnetic field properties similar to those of the Halbach magnet array. On the other hand, the mover utilizes permanent magnets with different magnetic field directions to achieve a Halbach magnet array design, resulting in a magnetic field direction opposite to that of the stator. The linear motor, formed by a combination of the stator and mover, is then analyzed and adjusted through Flux 3D finite element analysis to design a short-stroke, high-thrust linear motor leveraging the concentrated magnetic field characteristics of the magnet array. Finally, it is experimentally verified that the linear motor designed in the experiment can achieve an output force of up to an average of 90 N even when using an inferior core, reinforcing the potential and reliability of this design for practical implementation. [ABSTRACT FROM AUTHOR]

Published
2024
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29. Investigating Selectorless Property within Niobium Devices for Storage Applications

Author

Po-Hsun Chen, Chih-Yang Lin, Ting-Chang Chang, Jason K. Eshraghian, Yu-Ting Chao, Wei D. Lu, and Simon M. Sze

Subjects
General Materials Science
Abstract

Resistive random-access memory (RRAM) crossbar arrays have shown significant promise as drivers of neuromorphic computing, in-memory computing, and high-density storage-class memory applications. However, leakage current through parasitic sneak paths is one of the dominant obstacles for large-scale commercial deployment of RRAM arrays. To overcome this issue without compromising on the structural simplicity, the use of inherent selectors native to switching is one of the most promising ways to reduce sneak path currents without sacrificing density associated with the simple two-electrode structure. In this study, niobium oxide (NbO

Published
2022

30. Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Author

Kuan-Ju Zhou, Po-Hsun Chen, Yu-Zhe Zheng, Mao-Chou Tai, Yu-Xuan Wang, Ya-Ting Chien, Pei-Jun Sun, Hui-Chun Huang, Ting-Chang Chang, and Simon M. Sze

Subjects
Materials Chemistry, General Chemistry
Abstract

In this study, a thin-film transistor with a heterogeneous channel structure was introduced into oxide semiconductors to improve their electrical properties, which resulted in high mobility and lower subthreshold swing (S.S.).

Published
2022

36. Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

Author

Wei-Chun Hung, Fu-Yuan Jin, Kai-Chun Chang, Yi-Han Ye, Cheng Tung Huang, Yu-Shan Lin, Chien-Hung Yeh, Ting-Tzu Kuo, Ting-Chang Chang, Fong-Min Ciou, Osbert Cheng, Jui-Tse Hsu, Po-Hsun Chen, and Jia-Hong Lin

Subjects
Physics, Condensed matter physics, Field-effect transistor, Electrical and Electronic Engineering, Type (model theory), Mosfet circuits, Hot carrier stress, Hot carrier degradation, Electronic, Optical and Magnetic Materials, Threshold voltage
Abstract

In this study, we fabricated an n- type fin field-effect transistor (FinFET) and a p- type FinFET (p-FinFET) to compare their hot carrier degradation (HCD) in 14-nm technology nodes. We analyzed the HCD under different gate voltages ( $\text{V}_{\text {G}}$ ) and found that in a 14-nm technology node, the HCD of the p- FinFET was more serious than that of the n- type FinFET (n-FinFET). In addition, as $\text{V}_{\text {G}}$ increased, the HCD mechanism of the p- FinFET changed from electron–electron scattering (EES) to multiple-vibration excitation (MVE) faster than that of the n- FinFET did; thus, a larger threshold voltage ( $\text{V}_{\text {T}}$ ) shift was observed for the n- FinFET. When $\text{V}_{\text {G}}$ increased to $\text{V}_{\text {T}}+1.2$ V for the n- FinFET and to $\text{V}_{\text {T}} -{0.8}$ V for the p- FinFET, $\Delta \text{V}_{\text {T}}$ began to increase rapidly under hot carrier stress. The distributions of $\tau \times {(}\frac {I_{B}}{I_{D}}{)}^{-{2.7}}$ - ${I}_{D}$ for the n- FinFET and p- FinFET used in this study indicated that the mechanism of HCD changed from EES to MVE as $\text{V}_{\text {G}}$ increased. This result suggests that the p- FinFET experienced more serious HCD than did the n- FinFET because of the dominance of MVE in the p- FinFET. The HCD mechanism changed with a lower $\text{V}_{\text {G}}$ value for the p- FinFET than for the n- FinFET. Finally, HCD occurred more uniformly in the entire channel for the p- FinFET than for the n- FinFET.

Published
2021

38. Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

Author

Kuan-Ju Zhou, Hong-Yi Tu, Ting-Chang Chang, Tsung-Ming Tsai, Yang-Hao Hung, Chia-Chuan Wu, Yu-Xuan Wang, Po-Hsun Chen, Yu-Shan Shih, Pei-Jun Sun, Yu-Zhe Zheng, Yu-Fa Tu, and Yu-An Chen

Subjects
010302 applied physics, Materials science, business.industry, Low-temperature polycrystalline silicon, Transistor, engineering.material, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, law.invention, Active layer, Polycrystalline silicon, law, Thin-film transistor, 0103 physical sciences, engineering, Optoelectronics, Grain boundary, Electrical and Electronic Engineering, Alternating current, business
Abstract

This letter investigates degradation during alternating current (AC) operations in low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) produced using the selective excimer laser annealing (ELA). Different degrees of degradation, on-current increase and threshold voltage (Vth) shift were observed after AC operation stress in three devices with different ELA energies. Although a higher ELA energy device has a higher on-current, this will lead to higher protrusion and a stronger electrical field in the active layer. This stronger electrical field will cause serious electron trapping in the grain boundary trap (Ntrap), leading to more serious degradation than that found in the lower ELA energy devices. Finally, COMSOL simulations and C-V measurements were executed to verify the physical mechanism.

Published
2021

39. Impact of duration of mechanical support on heart transplantation: Hasty transplantation may not have a good long‐term outcome

Author

Sz‐Han Yu, Heng‐Wen Chou, Chih‐Hsien Wang, Chuan‐I Tsao, Hsun‐Yi Fu, Kevin Po‐Hsun Chen, Nai‐Hsin Chi, Shu‐Chien Huang, Nai‐Kuan Chou, Ron‐Bin Hsu, Hsi‐Yu Yu, Jou‐Wei Lin, and Yih‐Sharng Chen

Subjects
Heart Failure, Transplantation, Treatment Outcome, Time Factors, Humans, Heart Transplantation, Heart-Assist Devices, Retrospective Studies
Abstract

Mechanical circulatory support (MCS) has been widely utilized in critically ill cardiac transplant candidates. Few studies have investigated the impact of duration of MCS before heart transplantation (HTx) on long-term patient survival.A retrospective HTx database was reviewed between 2009 and 2019. Patients who did not or did undergo MCS before HTx were categorized into two groups: (1) A (did not) and (2) B (did), respectively. A receiver operating characteristic (ROC) curve was plotted to assess the cutoff level of MCS duration before HTx in evaluating 5-year survival.A total of 270 HTx patients (group A: 120, group B: 150) were analyzed. Group B patients had a higher percentage of blood type O, a higher incidence of resuscitation, a shorter listing duration, and a higher likelihood of having United Network for Organ Sharing (UNOS) 1A status than group A. The ROC curve revealed 24 days as a good cut-off level for determining the best MCS before HTx timing. Group B was categorized into two subgroups: (1) B1 (MCS 24 days, n = 65) and (2) B2 (MCS 24 days, n = 85). B2 had a higher incidence of cardiopulmonary resuscitation (CPR), hemodialysis, longer waiting time after MCS, and better ventricular assist device implantation than B1. However, the survival curves showed that B1 outcomes were significantly worse than in groups A and B2. Groups A and B2 had similar survival curves without an increased incidence of infection.The preliminary data demonstrated that a longer duration of MCS may be associated with better outcomes than urgent HTx.

Published
2022

40. EPG2S: Speech Generation and Speech Enhancement based on Electropalatography and Audio Signals using Multimodal Learning

Author

Li-Chin Chen, Po-Hsun Chen, Richard Tzong-Han Tsai, and Yu Tsao

Subjects
FOS: Computer and information sciences, Sound (cs.SD), Computer Science - Machine Learning, Audio and Speech Processing (eess.AS), Applied Mathematics, Signal Processing, FOS: Electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Computer Science - Sound, Machine Learning (cs.LG), Electrical Engineering and Systems Science - Audio and Speech Processing
Abstract

Speech generation and enhancement based on articulatory movements facilitate communication when the scope of verbal communication is absent, e.g., in patients who have lost the ability to speak. Although various techniques have been proposed to this end, electropalatography (EPG), which is a monitoring technique that records contact between the tongue and hard palate during speech, has not been adequately explored. Herein, we propose a novel multimodal EPG-to-speech (EPG2S) system that utilizes EPG and speech signals for speech generation and enhancement. Different fusion strategies based on multiple combinations of EPG and noisy speech signals are examined, and the viability of the proposed method is investigated. Experimental results indicate that EPG2S achieves desirable speech generation outcomes based solely on EPG signals. Further, the addition of noisy speech signals is observed to improve quality and intelligibility. Additionally, EPG2S is observed to achieve high-quality speech enhancement based solely on audio signals, with the addition of EPG signals further improving the performance. The late fusion strategy is deemed to be the most effective approach for simultaneous speech generation and enhancement., Accepted By IEEE Signal Processing Letter

Published
2022

41. Angular analysis of the decay B+ → K∗(892)+ μ + μ − in proton-proton collisions at s $$ \sqrt{\mathrm{s}} $$ = 8 TeV

Author

Changwoo Joo, Alessandro Calandri, M. Calderon De La Barca Sanchez, N. Deelen, D. Domínguez Damiani, Diego Beghin, Julie Malcles, Fengwangdong Zhang, Oleg Teryaev, A. Scribano, I. Babounikau, A. Ranieri, Izzeddin Suat Donertas, Livia Soffi, R. B. Garg, Christopher Seez, Matthias Kasemann, Luca Giommi, Cole Lindsey, Ada Solano, Paola Salvini, Yi-ting Duh, Boris Grynyov, B. De La Cruz, Jose F Benitez, Samuel Higginbotham, Salvatore Costa, J. Puerta Pelayo, Indara Suarez, Yong Ban, Florian Beaudette, Devdatta Majumder, Shengquan Tuo, Abhigyan Dasgupta, Daniel Arcaro, Christina Wang, Marek Walczak, Andrea Gelmi, Kinga Anna Wozniak, Stephen Sanders, Maciej Górski, Andrea Malara, Melanie Eich, Anna Macchiolo, Thomas Bergauer, A. Escalante Del Valle, Tariq Aziz, Dave M Newbold, B. Tali, Colin Bernet, Prasant Kumar Rout, J. Mejia Guisao, Ugur Kiminsu, G. P. Van Onsem, Seth Cooper, Luigi Guiducci, Riccardo Paramatti, Andrea Giammanco, Priyanka Kumari, Martti Raidal, Gregory R Snow, Igor Volobouev, Hirak Bandyopadhyay, Marguerite Tonjes, David Mark Raymond, E. O. Olaiya, Christophe Delaere, Özlem Özçelik, Carlos Willmott, R. Del Burgo, Jorge Fraga, Daniel Savoiu, J. Kaspar, Victor Kim, S. May, Semra Turkcapar, Linda Finco, Y-J Lee, Alexander Spiridonov, Marko Dragicevic, Burin Asavapibhop, Xunwu Zuo, I. A. Melzer-Pellmann, Willem Verbeke, Armando Lanaro, Francesca Nessi-Tedaldi, C. Adloff, Yongho Jeong, Karl Gill, Bora Akgun, Awder Mohammed Ahmed, Mingshui Chen, W. A. T. Wan Abdullah, Jamal Rorie, George Karathanasis, Jason Gilmore, Daniel Bloch, Mohamed Rashad Darwish, James Bueghly, Matthew Nguyen, V. Rodríguez Bouza, E. Gurpinar Guler, Pedro G Mercadante, Hans-Christian Kaestli, Ankush Reddy Kanuganti, Marco Paganoni, Don Lincoln, Giuseppe Benedetto Cerati, Y. Choi, Brandon Allen, James D. Olsen, Gyorgy Bencze, Arne Reimers, Xuejun Wang, N. V. Krasnikov, V. Sharma, Andreas Werner Jung, Chandiprasad Kar, G. L. Pinna Angioni, Dimitri Bourilkov, Li Yuan, Caterina Aruta, Flavia Cetorelli, Prabhat Ranjan Pujahari, W. De Boer, Jory Sonneveld, Hafeez R Hoorani, M. A. Mahmoud, Jingzhou Zhao, Yacine Haddad, Q. Wang, Alessandro Cardini, A. García Alonso, Jingyan Li, L. J. Sanchez Rosas, Robert Hirosky, Branislav Ristic, Balashangar Kailasapathy, S. Sanchez Cruz, Lucas Corcodilos, Antonin Kveton, Mauro Menichelli, A. Da Rold, Luca Perniè, Roland Horisberger, M. G. Albrow, Deepak Kumar, J. S. Lange, Manfred Jeitler, Urs Langenegger, Alexander Morton, Pierluigi Paolucci, Wei Zhang, Simona Cometti, Scott Thomas, Ludivine Ceard, Michele Arneodo, Garvita Agarwal, Ka Tung Lau, Demetra Tsiakkouri, Shawn Zaleski, Stavros Mallios, Bisnupriya Sahu, Anadi Canepa, Walaa Elmetenawee, Sophie Wuyckens, Pedro Silva, Regina Demina, Leonid Didukh, S. Luo, Brieuc Francois, Paul Edmund Karchin, Thomas Madlener, Rishi Patel, Y. D. Oh, Andris Skuja, Markus Stoye, Kai Yi, C. Wissing, A. Castaneda Hernandez, Fabrizio Palla, Reyer Band, Dario Menasce, Hyejin Kwon, S. W. Lee, Ivica Puljak, Hans Reithler, Zuhal Seyma Demiroglu, L. Hay, Felipe Ramirez, Matevz Tadel, Berkan Kaynak, J. D. Richman, Yannik Rath, Marek Gruchala, Simranjit Singh Chhibra, Owen Baron, Pritam Kalbhor, Samila Muthumuni, Steve Schnetzer, Saranya Ghosh, Klaas Padeken, Sourabh Dube, Daniele Bonacorsi, Nicholas Haubrich, Aleksandr Iuzhakov, Christopher Rogan, Erika Garutti, L. Borgonovi, Renato Campanini, Qianming Huang, Rosamaria Venditti, Crisostomo Sciacca, Maxim Goncharov, K. Ehataht, Marco Pieri, Gilvan Alves, M. Pelliccioni, Anna Teresa Meneguzzo, Roland Koppenhöfer, Melissa Quinnan, Korbinian Schweiger, Ali Eren Simsek, David Barney, Aleksandra Lelek, Stephanie Beauceron, Vladimir Chekhovsky, Marc Osherson, J. H. Kim, Ben Bylsma, A. 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Chang, Eduardo De Moraes Gregores, Marco Monteno, Ohannes Kamer Köseyan, Nazar Bartosik, Juliette Alimena, Paul Asmuss, Dennis Schwarz, Ekaterina Kuznetsova, Yves Sirois, Nicholas Manganelli, Vladimir Ivanchenko, Alexey Volkov, Zhenbin Wu, Bhawna Gomber, Alessio Boletti, Jie Zhang, Carlo Rovelli, Hevjin Yarar, Ashim Roy, Maria Toms, Andre Frankenthal, Silvio Donato, E. De La Cruz-Burelo, Vincenzo Innocente, Mattia Lizzo, C. A. Carrillo Montoya, Zoltan Gecse, Francesca Romana Cavallo, Viktor Savrin, Sarah Freed, T. R. Fernandez Perez Tomei, F. De Guio, A. David, Ksenia Shchelina, Albert M. Sirunyan, Steffie Ann Thayil, Marcello Mannelli, Alicia Calderon, Christian Schwanenberger, K. Vellidis, E. 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Van Putte, Fotios Ptochos, Stefan Grünendahl, Diogo Bastos, Chiara Amendola, A. Di Florio, Vincent Lemaitre, K. Wichmann, P. Kyberd, Dhanush Anil Hangal, Joshuha Thomas-Wilsker, Wolfgang Adam, Somnath Choudhury, Robert Schöfbeck, Gabriel Madigan, Kenichi Hatakeyama, Anna Woodard, Philip Harris, Ruchi Chudasama, Nikolai Golubev, D. Matos Figueiredo, Noemi Beni, C. S. Moon, D. R. Claes, Marcel Rieger, Anders Ryd, Gavin Davies, K. S. Lee, Geetanjali Chaudhary, M. Della Negra, Marc Dünser, Maria Isabel Josa, Davide Fiorina, Paul Baillon, Riccardo Bellan, Artur Apresyan, Marc Besancon, C. Chen, Dinyar Rabady, Jan Steggemann, Wolfram Dietrich Zeuner, Suresh C Tonwar, Sylvie Braibant-Giacomelli, Jeffrey Roskes, Kalliopi Manitara, Janek Bechtel, Marcos Cerrada, Giovanni Petrucciani, Eva Halkiadakis, A. De Wit, Frans Meijers, Stephen Trembath-Reichert, Wing Yan Wong, Brian L Winer, Frank Glege, Hessamoddin Kaveh, Edward Scott, Kristian Harder, Alexander Lanev, Anne Dabrowski, Bryan Caraway, C. Martin Perez, Thoth Gunter, Malgorzata Kazana, Claudio Grandi, Kirti Ranjan, Mayda Velasco, Ketino Kaadze, T. Kress, Susan Dittmer, Georgios Daskalakis, Milos Dordevic, Carsten Hensel, Andrei Gritsan, Sergei Gninenko, J. C. Freeman, M. Shi, Senka Duric, Benjamin Tannenwald, Guler Karapinar, S. Petrushanko, Giuseppe Latino, E. W. Vaandering, Alexander Titterton, V. Re, Werner Sun, Santeri Laurila, Christian Dziwok, Mehmet Özgür Sahin, Donato Creanza, Marc Dobson, M. Gola, Alessandro Giassi, Süleyman Durgut, John Paul Chou, W. Snoeys, Michael Benjamin Andrews, Rishabh Uniyal, Brian Paul Padley, Justin Williams, Zhaozhong Shi, Simone Paoletti, Abhijith Gandrakota, Suchandra Dutta, J. A. Murillo Quijada, Giulio Mandorli, Anne-Marie Magnan, Wagner Carvalho, M. M. Defranchis, J. Taylor, Alexander Schmidt, Nadir Daci, M. Teklishyn, S. M. Silva Do Amaral, Greg Landsberg, Cécile Caillol, Roberto Dell'Orso, J. W. Gary, Sergey Troshin, Gregory Iles, T. Boccali, Riccardo Salvatico, Maurizio Pierini, David Cussans, David D'Enterria, G. Bagliesi, C. Madrid, Helio Nogima, W. H. Smith, Elif Asli Yetkin, Anna Colaleo, Yildiray Komurcu, Alberto Orso Maria Iorio, Felice Pantaleo, Chanwook Hwang, Mário Costa, E. A. De Wolf, J. L. Dulemba, P. Rebello Teles, Amandeep Kaur Kalsi, Leonard Spiegel, Apichart Hortiangtham, Dezso Horvath, Shuang-Nan Zhang, Christina Reissel, Ryan Mueller, Francesco Romeo, Robert Klanner, M. Fernandez, S. Somalwar, Z. Y. You, Liam Wezenbeek, Yuta Takahashi, Torben Dreyer, Alessia Tricomi, Nikolay Tyurin, Roumyana Hadjiiska, Igor Smirnov, Pedrame Bargassa, Bekhzod S Yuldashev, Nikolay Voytishin, K. H. M. Kwok, C. Oropeza Barrera, Sioni Summers, Mikko Voutilainen, Kerstin Hoepfner, Eirini Tziaferi, Kira Burt, Zehui Zhang, Eleni Erodotou, Sumit Keshri, Alice Florent, Andrea Benaglia, Gabriel Ayala, Darin Acosta, Kristian Allan Hahn, Giorgia Rauco, Nancy Marinelli, Benjamin Charles Radburn-Smith, Plamen Iaydjiev, S. Fonseca De Souza, Simone Pigazzini, Grigory Pivovarov, Ibrahim Soner Zorbakir, Gianny Mestdach, E. Eskut, Natasa Raicevic, David Vannerom, Anne A. Campbell, Sunil Bansal, Giuseppe Iaselli, Vincenzo Mastrapasqua, Georgi Sultanov, Evan Wolfe, David Cutts, Kevin Stenson, C. Mora Herrera, Nicholas Smith, Jean-Charles Fontaine, A. De Cosa, Anton Dimitrov, Achim Stahl, B. Singh, M. Mohammadi Najafabadi, Emil Sørensen Bols, Panja-Riina Luukka, Luciano Di Fiore, Werner Lustermann, Andromachi Tsirou, Roberto Salerno, Scarlet Norberg, Olga Kodolova, Ram Krishna Dewanjee, Bora Isildak, A. Di Pilato, James Strait, Daniel Winterbottom, Thorben Quast, N. Cavallo, Po-Hsun Chen, Stefano Mersi, Mykyta Haranko, Tom A. Williams, Cristina Mantilla, D. Y. Wang, Lalit Mohan Pant, Aaron Dominguez, Felicitas Pauss, Angira Rastogi, Ayse Polatoz, Austin Baty, Paolo Giacomelli, Shin-Shan Yu, Wenxing Fang, Geoffrey Hall, G. N. Kim, Georgios Tsipolitis, Sanjay Padhi, B. Chazin Quero, Dener De Souza Lemos, Panagiotis Kokkas, S. K. Pflitsch, Niels Dupont, Gabriella Pugliese, Zhengcheng Tao, Biagio Rossi, J. M. Hernandez, Edward Laird, Aurore Savoy-Navarro, Luca Mastrolorenzo, Sanchita Bhattacharya, Kevin Lannon, Vieri Candelise, Ted Kolberg, C. Uribe Estrada, Muhammad Shoaib, Claude Charlot, G. Della Ricca, Reddy Pratap Gandrajula, Younes Otarid, Guenakh Mitselmakher, S. Orfanelli, Jordan Damgov, Tobias Pook, Jay Hauser, A. Vilela Pereira, Peter Hansen, Kisung Lee, Francisco Garcia, Basile Vermassen, Jay Mathew Lawhorn, Claude Amsler, P. Klabbers, S. Roy Chowdhury, Andrea Bellora, Laurent Favart, Cristian Pena, Thomas Reis, Christophe Royon, Elizabeth Sexton-Kennedy, Bobae Kim, Matthias Wolf, Paolo Ronchese, Badder Marzocchi, Sanjay Kumar Swain, Marc M Baarmand, Martin Lipinski, Frank Würthwein, Angela Taliercio, Manas Maity, Alexi Mestvirishvili, Ulrich Goerlach, Massimo Casarsa, Steve Nahn, Wren Vetens, Daniele Trocino, Ian Laflotte, C. Mills, Winston Ko, Marco Meschini, Paolo Capiluppi, Frigyes Nemes, James Rohlf, Carlos Avila, Ricardo Eusebi, William Tabb, C. Neu, Thong Nguyen, David Overton, Sang Il Pak, I. De Bruyn, Reza Goldouzian, Mohd Nizam Yusli, Vivan Nguyen, Renato Potenza, Guenter Eckerlin, Armen Tumasyan, Tejinder Virdee, Nicolò Tosi, M. Jones, Camilla Galloni, Paula Eerola, Manoj Sharan, Julia Thom, Finn Rebassoo, M. D. M. Capeans Garrido, C. E. Flores, Neeti Parashar, Klaus Rabbertz, Sebastiano Albergo, Igor Lokhtin, Rui Xiao, Kevin Burkett, Myriam Schönenberger, Zachary Lesko, J. Seixas, Merve Ince, Suyong Choi, Etiennette Auffray, Maurizio Biasini, D. R. Muller, Sinan Sagir, Marta Felcini, Negin Shafiei, Y. Mohammed, Jaana Kristiina Heikkilä, Nikitas Loukas, Mani Tripathi, Rachel Bartek, Marco Peruzzi, Usama Hussain, Owen Rosser Long, M. Csanad, Nicola Amapane, R. Sharma, Andreas Nowack, Olena Karacheban, Koushik Mandal, S. Cooperstein, Michael Reichmann, Anton Babaev, Eric Adams, Dennis Noll, Maria Agnese Ciocci, Maria Florencia Canelli, Fabrizio Ferro, Thomas Ferbel, Stepan Obraztsov, Changgi Huh, Anshul Kapoor, Vipin Bhatnagar, T. Liu, K. F. Chen, L. Malgeri, Kamuran Dilsiz, Seema Bahinipati, Paolo Rumerio, Lorenzo Uplegger, Alexander Fröhlich, Kenneth Bloom, G. Quast, Hannsjoerg Artur Weber, Gordon H. Hanson, Furong Yan, Raffaele Gerosa, Huaqiao Zhang, Alexander Ledovskoy, Vincent J Smith, F. Vazzoler, Shameena Bonomally, Andrey Pozdnyakov, Peter Fackeldey, J. Mijuskovic, R. D. Field, Jack King, Kuntal Mondal, Paraskevas Gianneios, Daniel Pitzl, Joaquin Emilo Siado, R. E. Sosa Ricardo, Oliver Pooth, Andrés Cabrera, Maksat Haytmyradov, Paolo Montagna, Thomas Berger, J. Madhusudanan Sreekala, Othmane Bouhali, Carlos Erice, David Mason, Luigi Moroni, Luca Lista, M. A. Segura Delgado, James G Branson, Samandeep Sharma, He He, Simone Bologna, Georg Steinbrück, David Krofcheck, J. P. Fernández Ramos, S. Gianì, Andrew Evans, Markus Merschmeyer, Eduardo Coelho, Ozlem Kaya, Sevil Salur, Y. Wang, D. Soldi, Barbara Clerbaux, Irene Zoi, Marcello Maggi, Davide Piccolo, Cristina Tuve, S. Sánchez Navas, Jose Chinellato, Richard Cavanaugh, Tomasz Gadek, Marco Rovere, Marco Toliman Lucchini, Mauricio Thiel, Ilya Gorbunov, R. G. Kellogg, Peter Timothy Cox, Alexander Pauls, Torben Lange, Michael Mulhearn, Borislav Pavlov, Vladimir Karjavine, Csaba Hajdu, Jie Xiao, Ilya Kravchenko, Jeroen Hegeman, Maria Teresa Grippo, Anatoli Zarubin, Federica Maria Simone, O. Zenaiev, James Wetzel, S. Seif El Nasr-storey, W. L. Aldá Júnior, Emyr Clement, B. McMaster, Ddc Wickramarathna, C. Fallon, Mario Masciovecchio, Huilin Qu, Dietrich Liko, Mykhailo Dalchenko, Tamás Álmos Vámi, Jingyu Luo, Prafulla Kumar Behera, Riccardo Andrea Manzoni, Christian Veelken, Yu. Andreev, Markus Klute, Joel Goldstein, Luciano Ristori, Milena Misheva, Luigi Calligaris, Kevin Pedro, Silvano Tosi, Ryan Heller, Maxime Guilbaud, Daniel Treille, Kelvin Mei, S. R. Dugad, James Letts, D. De Jesus Damiao, Sebastian Wuchterl, L. Viliani, Seungkyu Ha, Tamas Novak, S. Y. Hoh, F. L. Fabbri, Daniele Fasanella, A. M. Vargas Hernandez, German Martinez, T. Susa, Cristina Botta, Jonathon Langford, Viesturs Veckalns, Dario Bisello, Pascal Paganini, R. Walsh, Jonas Rembser, D. Green, Sema Zahid, Sergei Gleyzer, Ana Ovcharova, Andrea Venturi, M. Khakzad, Rino Castaldi, Brian Dorney, Mariarosaria D'Alfonso, Mario Galanti, Zoltan Szillasi, Jussi Viinikainen, Edoardo Bossini, Andrey Uzunian, E. Asilar, Christopher Palmer, Alice Bean, Balazs Ujvari, Margaret Eminizer, Andrea Piccinelli, S. Belforte, Nabarun Dev, Johan Borg, A. Bermúdez Martínez, Min Suk Kim, Radek Zlebcik, Debabrata Bhowmik, A. Meyer, Conor Henderson, A. Hervé, Prasenjit Mal, Christina Snyder, H. Becerril Gonzalez, Konstantin Matchev, J. J. Hollar, Jean-Marie Brom, Xavier Coubez, Shih-Chang Lee, Fabrice Couderc, Egidio Longo, Francesca Ricci-Tam, Ivan Marchesini, Mohsan Waseem Ather, Anna Stakia, Sébastien Wertz, Salvatore Rappoccio, L. Kreczko, Loukas Gouskos, Matthew P. Johnson, Maksim Azarkin, J. Alcaraz Maestre, Basil Schneider, Xavier Janssen, Nicolo Cartiglia, Shane Breeze, Iban Jose Cabrillo, Michael Krohn, Piotr Zalewski, C. Kleinwort, Xinmei Niu, Dragos Velicanu, Nuno Leonardo, C-E Wulz, Ashutosh Bhardwaj, Lata Panwar, Peter Raics, Peicho Petkov, Erik Brücken, R. Loveless, Dan Brunner, Achille Petrilli, G. Ortona, Sanghyun Ko, V. Makarenko, Sushil Chauhan, Kajari Mazumdar, Nickolas Mccoll, Atul Gurtu, Benjamin Krikler, Junquan Tao, O. Kukral, Abhisek Datta, O. Hlushchenko, Peter Meiring, Manfred Paulini, Jessica Prisciandaro, Genady Gavrilov, Marcus Hohlmann, Byung-Sik Hong, Milan Stojanovic, Mahmod Moussa Abdelkhalek Gadallah, Michael Hildreth, M. S. Meyer, Ugo Gasparini, Veikko Karimäki, Tiziano Rovelli, Sharad Malik, Byeonghak Ko, Sara Fiorendi, Vasken Hagopian, Carlos Florez, G. M. Dallavalle, Bhargav Madhusudan Joshi, Georgios Krintiras, Matteo Presilla, Zeynep Demiragli, Marina Kolosova, Yalcin Guler, Roger Wolf, Lev Dudko, Jeremy Andrea, Tanmay Sarkar, Matthew Joyce, Alberto Ruiz-Jimeno, D. A. Perez Navarro, Ilaria Vai, Nicolas Postiau, Siqi Yuan, Marco Musich, Redwan Habibullah, Hong Ni, Hannes Sakulin, Tilman Rohe, Sara Nabili, Anastasia Karavdina, W. T. Ford, P. J. Fernández Manteca, Luca Guzzi, M. Bluj, Pierluigi Zotto, Robert Bainbridge, T. W. Wang, J. Ripoll Sau, Bożena Boimska, Kerem Cankocak, Andrew Levin, Anton Stepennov, Andrew Loeliger, Andrey Gribushin, Gobinda Majumder, H. Rejeb Sfar, Harrison Prosper, V. Smirnov, Jane Nachtman, Mario Deile, Stephen Robert Wagner, Sergio F Novaes, Samet Lezki, Morgan Lethuillier, Yasar Onel, Filippo Errico, Jean-Louis Faure, Brian Francis, Tamas Ferenc Csorgo, Paolo Checchia, Didar Dobur, Himal Acharya, S. Goy Lopez, Kadir Ocalan, P. Priyanka, David Walter, Amedeo Staiano, Alberto Messineo, John Almond, Austin Ball, S. M. Spanier, Vladimir Blinov, Nathaniel Odell, Ignacio Redondo, J. Berenguer Antequera, Yurii Maravin, Vladimir Gavrilov, Baokai Wang, Z. A. Liu, Jennifer Chu, Viktor Khristenko, M. Lu, Gaël Perrin, Umesh Joshi, H. Sert, Hongbo Liao, Aleko Khukhunaishvili, Daniele Ruini, Stefano Marcellini, Sonaina Undleeb, Michail Bachtis, Alexandra Tews, Bennett Marsh, Sa. Jain, Spandan Mondal, Luc Pape, William Arthur Nash, Vassili Kachanov, Jared Sturdy, Doris Eckstein, Achim Geiser, Batoul Diab, Moritz Guthoff, Marc Weber, Reham Aly, Javier Cuevas, L. Urda Gómez, Fatma Boran, Lara Zygala, Ioannis Papakrivopoulos, Laurent Thomas, Raffaella Tramontano, A. C. Le Bihan, Marcello Abbrescia, Metin Yalvac, Stephan Lammel, Daniel Noonan, D. Valsecchi, Sanjay Kumar, Danila Tlisov, Sourav Chatterjee, M. Alhusseini, R. M. Brown, John Alison, Aliakbar Ebrahimi, Leonardo Cristella, Hannes Jung, Markus Spanring, Mark Saunders, N. De Filippis, Victor Murzin, Q. Li, Arash Jofrehei, Samuel Nathan Webb, Katja Klein, Giovanni Mocellin, Ashish Sharma, A. M. Rossi, Evgueni Vlasov, Qianying Guo, A.-M. Lyon, Kurtis F Johnson, Greg P Heath, Th. Müller, R. Granier de Cassagnac, Alexey Kalinin, Maxime Gouzevitch, Alexander Zhokin, Andrea Beschi, Paul Sheldon, Yuichi Kubota, Andreas Albert, Martijn Mulders, Alexander Dierlamm, A. Rose, S. Kaur, Marius Metzler, A. Bragagnolo, Song-Ming Wang, Kamal Lamichhane, Mary Hadley, Martino Margoni, Daniel Guerrero, Roberto Mulargia, Dylan Gilbert, Michal Szleper, Chia-Ming Kuo, P. Major, Nadia Pastrone, Candan Dozen, Michael Wayne Arenton, J. Duarte, Marek Niedziela, Christoph Schäfer, Alexander Grohsjean, Siddhesh Sawant, S. Meola, Natale Demaria, Xuyang Gao, Shalini Thakur, Navid Rad, N. Turini, Susan Gascon, Gabriel Ramirez-Sanchez, James John Brooke, Cédric Prieels, F. Fiori, Gunther Roland, K. El Morabit, Zheng Wang, Ji Hwan Bhyun, Jeffrey Krupa, Illia Khvastunov, Lev Uvarov, Rajdeep Mohan Chatterjee, Martina Ressegotti, Oleksii Turkot, Michele Selvaggi, O. Behnke, Gulsen Onengut, Viktor Matveev, Lea Caminada, Rong-Shyang Lu, H. Lee, Carlo Civinini, Clemens Lange, K. Sandeep, Santiago Folgueras, George Alverson, Roman Kogler, Satoshi Hasegawa, A. Bodek, Oleksii Toldaiev, Andrew Wildridge, Mark Pesaresi, Claudia Ciocca, S. Shmatov, Kaitlin Salyer, F. Torres Da Silva De Araujo, Markus Seidel, Vineet Kumar, Simon Regnard, Jiajing Mao, Leonid Levchuk, Luca Scodellaro, Christos Roskas, Maria Cepeda, Jorgen D'Hondt, Daniela Schäfer, Tim Ziemons, T. Mitchell, Matthias Komm, Nadeesha Wickramage, Q. Ingram, L. Valencia Palomo, Salvatore Buontempo, Paul Avery, Lisa Benato, L. I. Estevez Banos, Quentin Python, Randy Ruchti, Joe Incandela, Luca Cadamuro, Colin Jessop, Cecilia Elena Gerber, Belforte, S., Candelise, V., Casarsa, M., Cossutti, F., DA ROLD, A., DELLA RICCA, G., Vazzoler, F., and ET AL (the CMS, Collaboration)

Subjects
Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, Library science, QC770-798, 01 natural sciences, B physics, Hadron-Hadron scattering (experiments), Nuclear and particle physics. Atomic energy. Radioactivity, 0103 physical sciences, media_common.cataloged_instance, ddc:530, European union, 010306 general physics, Montenegro, China, Nuclear Experiment, media_common, Physics, 010308 nuclear & particles physics, PARTICLE PHYSICS, LARGE HADRON COLLIDER, CMS, Industrial research, Chinese academy of sciences, language.human_language, Physics and Astronomy, language, Physics::Accelerator Physics, Science policy, High Energy Physics::Experiment, Sri lanka, Portuguese
Abstract

BMBWF (Austria); FWF (Austria)Austrian Science Fund (FWF); FNRS (Belgium)Fonds de la Recherche Scientifique - FNRS; FWO (Belgium)FWO; CNPq (Brazil)Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPQ); CAPES (Brazil)Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES); FAPERJ (Brazil)Fundacao Carlos Chagas Filho de Amparo a Pesquisa do Estado do Rio De Janeiro (FAPERJ); FAPERGS (Brazil)Fundacao de Amparo a Ciencia e Tecnologia do Estado do Rio Grande do Sul (FAPERGS); FAPESP (Brazil)Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP); MES (Bulgaria); CERN; CAS (China)Chinese Academy of Sciences; MoST (China)Ministry of Science and Technology, China; NSFC (China)National Natural Science Foundation of China (NSFC); COLCIENCIAS (Colombia)Departamento Administrativo de Ciencia, Tecnologia e Innovacion Colciencias; MSES (Croatia); CSF (Croatia); RIF (Cyprus); SENESCYT (Ecuador); MoER (Estonia); ERC PUT (Estonia); ERDF (Estonia); Academy of Finland (Finland)Academy of Finland; MEC (Finland); HIP (Finland); CEA (France)French Atomic Energy Commission; CNRS/IN2P3 (France)Centre National de la Recherche Scientifique (CNRS); BMBF (Germany)Federal Ministry of Education & Research (BMBF); DFG (Germany)German Research Foundation (DFG); HGF (Germany); GSRT (Greece)Greek Ministry of Development-GSRT; NKFIA (Hungary); DAE (India)Department of Atomic Energy (DAE); DST (India)Department of Science & Technology (India); IPM (Iran); SFI (Ireland)Science Foundation Ireland; INFN (Italy)Istituto Nazionale di Fisica Nucleare (INFN); MSIP (Republic of Korea); NRF (Republic of Korea); MES (Latvia); LAS (Lithuania); MOE (Malaysia); UM (Malaysia); BUAP (Mexico); CINVESTAV (Mexico); CONACYT (Mexico)Consejo Nacional de Ciencia y Tecnologia (CONACyT); LNS (Mexico); SEP (Mexico); UASLP-FAI (Mexico); MOS (Montenegro); MBIE (New Zealand); PAEC (Pakistan); MSHE (Poland); NSC (Poland); FCT (Portugal)Portuguese Foundation for Science and TechnologyEuropean Commission; JINR (Dubna); MON (Russia); RosAtom (Russia); RAS (Russia)Russian Academy of Sciences; RFBR (Russia)Russian Foundation for Basic Research (RFBR); NRC KI (Russia); MESTD (Serbia); SEIDI (Spain); CPAN (Spain); PCTI (Spain); FEDER (Spain)European Commission; MOSTR (Sri Lanka); Swiss Funding Agencies (Switzerland); MST (Taipei); ThEPCenter (Thailand); IPST (Thailand); STAR (Thailand); NSTDA (Thailand); TUBITAK (Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK); TAEK (Turkey)Ministry of Energy & Natural Resources - Turkey; NASU (Ukraine); STFC (U.K.)UK Research & Innovation (UKRI)Science & Technology Facilities Council (STFC); DOE (U.S.A.)United States Department of Energy (DOE); NSF (U.S.A.)National Science Foundation (NSF); Marie-Curie program (European Union); European Research Council (European Union)European Research Council (ERC)European Commission [675440, 724704, 752730, 765710]; Horizon 2020 Grant (European Union) [675440, 724704, 752730, 765710]; Leventis Foundation; A.P. Sloan FoundationAlfred P. Sloan Foundation; Alexander von Humboldt FoundationAlexander von Humboldt Foundation; Belgian Federal Science Policy OfficeBelgian Federal Science Policy OfficeEuropean Commission; Fonds pour la Formation a la Recherche dans l'Industrie et dans l'Agriculture (FRIA-Belgium)Fonds de la Recherche Scientifique - FNRS; Agentschap voor Innovatie door Wetenschap en Technologie (IWT-Belgium)Institute for the Promotion of Innovation by Science and Technology in Flanders (IWT); F.R.S.-FNRS (Belgium) under the Excellence of Science -EOS -be.h projectFonds de la Recherche Scientifique - FNRS [30820817]; FWO (Belgium) under the Excellence of Science -EOS -be.h projectFWO [30820817]; Beijing Municipal Science & Technology CommissionBeijing Municipal Science & Technology Commission [Z191100007219010]; Ministry of Education, Youth and Sports (MEYS) of the Czech RepublicMinistry of Education, Youth & Sports - Czech Republic; Deutsche Forschungsgemeinschaft (DFG) under Germany's Excellence StrategyGerman Research Foundation (DFG) [EXC 2121, 390833306]; Lendulet (Momentum) Program of the Hungarian Academy of Sciences (Hungary); Janos Bolyai Research Scholarship of the Hungarian Academy of Sciences (Hungary); New National Excellence Program UNKP (Hungary); NKFIA research grants (Hungary) [123842, 123959, 124845, 124850, 125105, 128713, 128786, 129058]; Council of Science and Industrial Research, IndiaCouncil of Scientific & Industrial Research (CSIR) - India; HOMING PLUS program of the Foundation for Polish Science (Poland); European Union, Regional Development Fund (Poland); Mobility Plus program of the Ministry of Science and Higher Education (Poland); National Science Center (Poland)National Science Centre, Poland [Harmonia 2014/14/M/ST2/00428, Opus 2014/13/B/ST2/02543, 2014/15/B/ST2/03998, 2015/19/B/ST2/02861, Sonata-bis 2012/07/E/ST2/01406]; National Priorities Research Program by Qatar National Research Fund; Ministry of Science and Higher Education (Russia) [02.a03.21.0005]; Tomsk Polytechnic University Competitiveness Enhancement Program; Programa Estatal de Fomento de la Investigacion Cientifica y Tecnica de Excelencia Maria de Maeztu [MDM-2015-0509]; Programa Severo Ochoa del Principado de Asturias; Thalis program - EU-ESF; Aristeia program - EU-ESF; Greek NSRFGreek Ministry of Development-GSRT; Rachadapisek Sompot Fund for Postdoctoral Fellowship (Thailand); Chulalongkorn University (Thailand)Chulalongkorn University; Chulalongkorn Academic into Its 2nd Century Project Advancement Project (Thailand); Kavli Foundation; Nvidia Corporation; SuperMicro Corporation; Welch FoundationThe Welch Foundation [C-1845]; Weston Havens Foundation (U.S.A.)

Published
2021

42. Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Author

Hao-Xuan Zheng, Shih-Kai Lin, Chih-Cheng Yang, Pei-Yu Wu, Po-Hsun Chen, Wen-Chung Chen, Hui-Chun Huang, Yong-Ci Zhang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Tsung-Ming Tsai, and Jian-Jie Chen

Subjects
010302 applied physics, Materials science, Doping, chemistry.chemical_element, Plasma, 01 natural sciences, Supercritical fluid, Electronic, Optical and Magnetic Materials, Hafnium, Resistive random-access memory, Reliability (semiconductor), chemistry, Chemical engineering, 0103 physical sciences, Electrical and Electronic Engineering, Current (fluid), Voltage
Abstract

This research investigates one of the process or element doping methods used to enhance the reliability of resistive random access memory (RRAM). A supercritical fluid process combines the advantages of the high permeability of gas with the solubility of liquids, and this novel process introduces water molecules into the supercritical fluid for oxidation in order to improve the resistance of random storage. In terms of reliability of the memory, while previous research has used an oxygen plasma treatment to improve RRAM device performance, this work performed a comparison of the two methods and found that the supercritical oxidation treatment can reduce the forming voltage by 25% and produce superior electrical operation, with an endurance test exhibiting an increase to 108 cycles and an improvement of 102. The material analysis confirmed that, during the resistance switching process, the switching layer was more oxidized after this novel supercritical oxidation, resulting in the reduction of operating current and improved reliability compared with the plasma oxidation device.

Published
2021

43. Operating efficiency enhancement of hybrid energy storage system for IPMSM drives

Author

Fu Sheng Pai, Min-Fu Hsieh, Po Hsun Chen, and Yan Zhen Huang

Subjects
business.product_category, Permanent magnet synchronous motor, Computer science, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Hybrid energy, 02 engineering and technology, Automotive engineering, Motor drive, Electric vehicle, Computer data storage, 0202 electrical engineering, electronic engineering, information engineering, Inverter, Electrical and Electronic Engineering, business
Abstract

This paper proposes a control strategy to enhance the operating efficiency of a Hybrid Energy Storage System (HESS) for an Interior Permanent Magnet Synchronous Motor (IPMSM) drive. In this method,...

Published
2021

44. Mesomorphic Intermediate Stages During Brill Transition of Nylon 6/6

Author

An-Chung Su, U-Ser Jeng, Cheng-Yo Ho, Po-Hsun Chen, and Ching-Feng Yang

Subjects
Phase transition, Materials science, Polymers and Plastics, biology, Process Chemistry and Technology, Organic Chemistry, Brill, Triclinic crystal system, biology.organism_classification, Lattice (module), chemistry.chemical_compound, Crystallography, Nylon 6, chemistry
Abstract

The Brill transition in nylon 6/6 is generally perceived as a fully reversible solid–solid transformation between a low-temperature triclinic lattice (α-phase) and a high-temperature pseudohexagona...

Published
2021

46. A Novel Robust Sensorless Technique for Field-Oriented Control Drive of Permanent Magnet Synchronous Motor

Author

Po-Hsun Chen, That-Dong Ton, and Min-Fu Hsieh

Subjects
Vector control, General Computer Science, Computer science, Noise (signal processing), Rotor (electric), Stator, Phase angle, General Engineering, Sensorless, current estimation, Flux linkage, field-oriented control, law.invention, TK1-9971, Quantitative Biology::Subcellular Processes, permanent magnet motor drive, Reliability (semiconductor), Control theory, Position (vector), law, General Materials Science, Electrical engineering. Electronics. Nuclear engineering, rotor position estimation, sensorless vector control
Abstract

This paper proposes a novel rotor position estimation technique based on stator flux linkage to implement robust sensorless field-oriented control for permanent magnet synchronous motor drives. The proposed method can accurately estimate rotor position by mitigating the dependence on quality of the magnitude and phase angle of the estimated stator flux linkage. A high-accuracy load angle calculation based on $d$ - $q$ -axis current estimation method is first developed for further rotor position determination. In the rotor position calculation, the reference flux linkage magnitude is used instead of the estimated one to avoid the influence of potential high noise levels during low speed operation. As a result, the rotor angle estimation depends only on the phase angle of stator flux linkage, without the effect of its magnitude. The estimation accuracy can thus be improved. Also, by employing a simple stator flux linkage phase lag compensator, the performance of the proposed sensorless method can be dramatically improved at low speed. Moreover, the problem of motor parameter variation (e.g., changes in winding resistance, stator inductances, and permanent magnetic flux linkage) has been analyzed and overcome. Finally, comparisons between conventional and proposed methods are presented with simulations and experiments to demonstrate the effectiveness and reliability of the proposed method.

Published
2021

47. Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Author

Kai-Chun Chang, Chien-Hung Yeh, Yu-Shan Lin, Yun-Hsuan Lin, Ting-Tzu Kuo, Yen-Cheng Chang, Min-Chen Chen, Kuan-Hsu Chen, Wei-Chun Hung, Po-Hsun Chen, Chien-Yu Lin, Ting-Chang Chang, Fong-Min Ciou, and Fu-Yuan Jin

Subjects
010302 applied physics, Materials science, Silicon, Passivation, Hydrogen, business.industry, Annealing (metallurgy), Dangling bond, chemistry.chemical_element, 01 natural sciences, Supercritical fluid, Electronic, Optical and Magnetic Materials, Silicon-germanium, chemistry.chemical_compound, chemistry, 0103 physical sciences, Energy level, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

This work investigates a low-temperature and high-pressure (LTHP) hydrogen treatment in Si-channel and SiGe-channel metal–oxide–semiconductor capacitors (MOSCAPs). The LTHP hydrogen treatment can repair dangling bonds in the SiO2/Si and SiO2/SiGe interfaces to enhance device performance. Additional parameters of the treatment, including treatment pressure and time, are also investigated to better understand the reaction mechanisms, which further proves the effectiveness and potential of this supercritical fluid (SCF)-based treatment. In addition, this treatment will not damage the front structure and materials due to the relatively low process temperature (120 °C). Therefore, this treatment can be a nondestructive postannealing process. The results of extracting interface defect density ( ${D}_{{\text {it}}}{)}$ by the conductance method show that there is an ~51% reduction in the defect density after this posttreatment, a significant decrease. Finally, a TCAD simulation of different defect densities verifies the repair mechanism of deep-level defects.

Published
2020

48. Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode

Author

Chun-Chu Lin, Chih-Yang Lin, Yi-Ting Tseng, Ching-Ting Lee, Ting-Chang Chang, Hsin Ying Lee, Po-Hsun Chen, Wen-Chung Chen, and Tsung-Han Yeh

Subjects
010302 applied physics, Fabrication, Materials science, business.industry, Vanadium, chemistry.chemical_element, 01 natural sciences, Vanadium oxide, Electronic, Optical and Magnetic Materials, Switching time, Semiconductor, chemistry, 0103 physical sciences, Electroforming, Electrode, Optoelectronics, Electrical and Electronic Engineering, business, Tin
Abstract

In this study, vanadium (V) was used as a top electrode in a vanadium oxide (VOx)-based selector device. Electroforming was performed to form a threshold region with metal–insulator transition (MIT) at both V electrode and VOx switching layers without annealing during fabrication. The simple V/VOx/TiN structure obtained was scalable and compatible with complementary metal–oxide–semiconductors. All electrical measurement results indicated that V/VOx/TiN selectors exhibited excellent characteristics such as high uniformity, a short switching time of 60 ns, a robust endurance of >109 cycles, and high reliability and stability. Both the simulation analysis and current fitting method were applied to further validate experimental results. Consequently, we developed a nanoscale V/VOx/TiN selector with excellent characteristics, which can be potentially applied to future highdensity crossbar memory devices to overcome sneak-path problems.

Published
2020

49. Effects of Charge Quantity Induced by Different Forming Methods in Solid Electrolyte GeSO-Based Resistance Switching Device With Copper Electrode

Author

Po-Hsun Chen, Chen-Yi Hsieh, and Hong-Yi Yang

Subjects
010302 applied physics, Materials science, business.industry, chemistry.chemical_element, Forming processes, Charge (physics), Electrolyte, Thermal conduction, 01 natural sciences, Copper, Electronic, Optical and Magnetic Materials, Resistive random-access memory, chemistry, 0103 physical sciences, Electrode, Optoelectronics, Electrical measurements, Electrical and Electronic Engineering, business
Abstract

In this article, two different resistance switching (RS) behaviors are demonstrated after using dc and constant bias stressed (CBS) forming methods in GeSO-based resistive random access memory (RRAM) with a copper top electrode. Electrical measurements show that the amount of charge during the forming process significantly affects their RS behaviors. Large memory windows appear when applying CBS forming, while traditional dc forming did not exhibit such characteristics. Both current–voltage ( $I-V$ ) fitting and high temperature retention test are used to further investigate the RS property and verify the stability. Finally, conduction models for devices using these different forming methods are also proposed to better illustrate their different conducting behaviors in the GeSO-based RRAM device.

Published
2020

50. Nyanpass wins Minishogi and Diceshogi tournaments

Author

Jr-Chang Chen, Hsuan-Yu Wang, and Po-Hsun Chen

Subjects
Human-Computer Interaction, Computer science, Computational Mechanics, Computer Science (miscellaneous), Computer Graphics and Computer-Aided Design
Published
2020

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