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10 results on '"Porshnev, Peter"'

1. Compact representation for electroweak lepton sector

Author

Porshnev, Peter

Subjects
High Energy Physics - Phenomenology
Abstract

A new representation of electroweak lepton sector is proposed. It consists of two Weyl spinors per one lepton family. It is shown that proposed representation is fully equivalent to the conventional left-handed iso-doublet. New type of plane wave solutions can be found under certain additional assumptions., Comment: This arXiv submission is next revision after DOI publication. Some text was moved into the appendix, both title and abstract changed, however all equations, results, and 99% of text are the same as in DOI publication

Published
2023
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2. Electric dipole moment in storage ring experiments

Author

Porshnev, Peter I

Subjects
High Energy Physics - Phenomenology
Abstract

The measurement of electric dipole moment in storage rings can potentially exceed the sensitivity of tests with neutral systems. The spin dynamics under such conditions is described by the Bargmann-Michel-Telegdi equation. It can be derived in the semiclassical approximation under several assumptions one of which is the zero pseudoscalar bilinear. However, many promising extensions to the standard model consider scalar-pseudoscalar couplings which assume nonzero electron pseudoscalar. We re-derive the spin precession equation under conditions that do not assume that pseudoscalar is zero. It leads to a correction term that might be required for matching the storage ring measurements with QFT evaluations., Comment: Accepted by Physica Scripta (Particles, fields, and nuclear physics)

Published
2021
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4. CO2/Sn LPP EUV sources for device development and HVM

Author

Brandt, David C., primary, Fomenkov, Igor V., additional, Farrar, Nigel R., additional, La Fontaine, Bruno, additional, Myers, David W., additional, Brown, Daniel J., additional, Ershov, Alex I., additional, Sandstrom, Richard L., additional, Vaschenko, Georgiy O., additional, Bowering, Norbert R., additional, Das, Palash, additional, Fleurov, Vladimir B., additional, Zhang, Kevin, additional, Srivastava, Shailendra N., additional, Ahmad, Imtiaz, additional, Rajyaguru, Chirag, additional, De Dea, Silvia, additional, Dunstan, Wayne J., additional, Baumgart, Peter, additional, Ishihara, Toshi, additional, Simmons, Rod D., additional, Jacques, Robert N., additional, Bergstedt, Robert A., additional, Porshnev, Peter I., additional, Wittak, Christopher J., additional, Rafac, Robert J., additional, Grava, Jonathan, additional, Schafgans, Alexander A., additional, Tao, Yezheng, additional, Hoffmann, Kay, additional, Ishikawa, Tedsuja, additional, Evans, David R., additional, and Rich, Spencer D., additional

Published
2013
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5. Laser produced plasma EUV sources for device development and HVM

Author

Brandt, David C., primary, Fomenkov, Igor V., additional, Lercel, Michael J., additional, La Fontaine, Bruno M., additional, Myers, David W., additional, Brown, Daniel J., additional, Ershov, Alex I., additional, Sandstrom, Richard L., additional, Bykanov, Alexander N., additional, Vaschenko, Georgiy O., additional, Böwering, Norbert R., additional, Das, Palash, additional, Fleurov, Vladimir B., additional, Zhang, Kevin, additional, Srivastava, Shailendra N., additional, Ahmad, Imtiaz, additional, Rajyaguru, Chirag, additional, De Dea, Silvia, additional, Dunstan, Wayne J., additional, Baumgart, Peter, additional, Ishihara, Toshi, additional, Simmons, Rod D., additional, Jacques, Robert N., additional, Bergstedt, Robert A., additional, Porshnev, Peter I., additional, Wittak, Christian J., additional, Woolston, Michael R., additional, Rafac, Robert J., additional, Grava, Jonathan, additional, Schafgans, Alexander A., additional, and Tao, Yezheng, additional

Published
2012
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6. Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

Author

Ortolland, Claude, primary, Horiguchi, Naoto, additional, Kerner, Christoph, additional, Chiarella, Thomas, additional, Eyben, Pierre, additional, Everaert, Jean-Luc, additional, del Agua Borniquel, Jose Ignacio, additional, Poon, Tze, additional, Santhanam, Kartik, additional, Porshnev, Peter, additional, Foad, Majeed, additional, Schreutelkamp, Robert, additional, Absil, Philippe, additional, Vandervorst, Wilfried, additional, Felch, Susan, additional, Hoffmann, Thomas, additional, Seebauer, Edmund G., additional, Felch, Susan B., additional, Jain, Amitabh, additional, and Kondratenko, Yevgeniy V., additional

Published
2008
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8. CO2/Sn LPP EUV sources for device development and HVM

Author

Naulleau, Patrick P., Brandt, David C., Fomenkov, Igor V., Farrar, Nigel R., La Fontaine, Bruno, Myers, David W., Brown, Daniel J., Ershov, Alex I., Sandstrom, Richard L., Vaschenko, Georgiy O., Böwering, Norbert R., Das, Palash, Fleurov, Vladimir B., Zhang, Kevin, Srivastava, Shailendra N., Ahmad, Imtiaz, Rajyaguru, Chirag, De Dea, Silvia, Dunstan, Wayne J., Baumgart, Peter, Ishihara, Toshi, Simmons, Rod D., Jacques, Robert N., Bergstedt, Robert A., Porshnev, Peter I., Wittak, Christopher J., Rafac, Robert J., Grava, Jonathan, Schafgans, Alexander A., Tao, Yezheng, Hoffmann, Kay, Ishikawa, Tedsuja, Evans, David R., and Rich, Spencer D.

Published
2013
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9. Laser produced plasma EUV sources for device development and HVM

Author

Brandt, David C., Fomenkov, Igor V., Lercel, Michael J., La Fontaine, Bruno M., Myers, David W., Brown, Daniel J., Ershov, Alex I., Sandstrom, Richard L., Bykanov, Alexander N., Vaschenko, Georgiy O., Böwering, Norbert R., Das, Palash, Fleurov, Vladimir B., Zhang, Kevin, Srivastava, Shailendra N., Ahmad, Imtiaz, Rajyaguru, Chirag, De Dea, Silvia, Dunstan, Wayne J., Baumgart, Peter, Ishihara, Toshi, Simmons, Rod D., Jacques, Robert N., Bergstedt, Robert A., Porshnev, Peter I., Wittak, Christian J., Woolston, Michael R., Rafac, Robert J., Grava, Jonathan, Schafgans, Alexander A., and Tao, Yezheng

Abstract

Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. We present the latest results on exposure power generation, collection, and clean transmission of EUV through the intermediate focus. Semiconductor industry standards for reliability and source availability data are provided. We report on measurements taken using a 5sr normal incidence collector on a production system. The lifetime of the collector mirror is a critical parameter in the development of extreme ultra-violet LPP lithography sources. Deposition of target material as well as sputtering or implantation of incident particles can reduce the reflectivity of the mirror coating during exposure. Debris mitigation techniques are used to inhibit damage from occuring, the protection results of these techniques will be shown over multi-100's of hours.

Published
2012
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10. Advanced packaging lithography trends.

Author

Porshnev, Peter

Subjects
*LITHOGRAPHY, *INTEGRATED circuit packaging, *ECONOMIC trends, *ELECTRONIC industries forecasting, *INTEGRATED circuit design
Abstract

The article offers the author's insights on the market trends for advanced packaging (AP) lithography. Topics discussed include the expected increase in the worldwide adoption and innovation of AP lithography, possible growth of wafer-level packaging (WLP) content, and the major lithography challenges which include high aspect ratios of imaging submicron redistribution layers (RDL), overlay errors reduction, and handling of warped substrates.

Published
2019

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