113 results on '"Rafferty, C. S."'
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2. Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques
3. An Accurate NMOS Mobility Model for 0.25µm MOSFETs
4. Technology CAD at AT&T
5. Device Simulation for Silicon ULSI
6. Shallow Boron Implant Activation
7. Modeling of {311} Defects
8. Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon
9. Junctions for Deep Sub-100 NM MOS: How Far will Ion Implantation Take Us?
10. Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si
11. The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET
12. Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence
13. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon.
14. Diffusion parameters of indium for silicon process modeling.
15. Influence of fluorine implant on boron diffusion: Determination of process modeling parameters.
16. Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers.
17. Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy.
18. Simulation of Silicon Processing
19. A low dark current and high quantum efficiency monolithic germanium-on-silicon CMOS imager technology for day and night imaging applications
20. Enhanced low temperature electrical activation of B in Si
21. Germline transformation of the malaria vector, Anopheles gambiae, with the piggyBac transposable element
22. Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
23. Depth dependence of {311} defect dissolution
24. Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
25. Sub-50 nm Local Channel MOSFETs by SALVO Process
26. Electrical Properties of Cobalt and Copper Contamination in Processed Silicon
27. The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET.
28. Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence.
29. Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si.
30. Junctions for Deep Sub-100 NM MOS: How Far will Ion Implantation Take Us?
31. Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si
32. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
33. Junctions for Deep Sub-100 NM MOS: How Far will Ion Implantation Take Us?
34. Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion
35. Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si
36. Dopant dose loss at the Si–SiO[sub 2] interface
37. Boron pileup and clustering in silicon-on-insulator films
38. Activation and deactivation of implanted B in Si
39. B cluster formation and dissolution in Si: A scenario based on atomistic modeling
40. Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography
41. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model
42. B diffusion and clustering in ion implanted Si: The role of B cluster precursors
43. The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C
44. Simulation of cluster evaporation and transient enhanced diffusion in silicon
45. Fast metal diffusers in Si in the presence of Si self‐interstitial traps
46. The role of the surface in transient enhanced diffusion
47. Behavior of intrinsic Si point defects during annealing in vacuum
48. Properties of Point-Defects in Si for Process Modeling
49. Response to ‘‘Comment on ‘Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects’ ’’ [Appl. Phys. Lett.65, 1320 (1994)]
50. Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects
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