280 results on '"Rajagopal Reddy, V."'
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2. Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer
3. Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer
4. Digital etching of AlGaN/GaN heterostructures with GaN cap using inductively coupled oxygen plasma process combined with wet chemical treatment
5. Structural, chemical, optical, electrical and photodiode properties of Au/ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer
6. Analysis of photodiode and barrier properties of CoPc/n-Ge heterojunction under various illumination wavelengths
7. Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features
8. Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications
9. Chemical states and electrical features of Ti/CaTiO3 (CT)/p-InP MIS-type Schottky diode with a high-k CT interlayer
10. Exploration of current–voltage (I–V) behaviour of Au/SnO2/n-type InP heterojunction in the temperature range of 200–400 K
11. Current-voltage (I-V) characteristics of Au/n-Ge heterostructure based on cobalt phthalocyanine (CoPc) interlayer
12. Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range
13. Chemical, electrical and carrier transport properties of Au/cytosine/undoped-InP MPS junction with a cytosine polymer
14. Microstructural, chemical and electrical characteristics of Au/magnetite (Fe3O4)/n-GaN MIS junction with a magnetite interlayer
15. Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
16. Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer.
17. Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN
18. Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer
19. Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer
20. Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3
21. Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization
22. Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer
23. Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
24. Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer
25. Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction
26. Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
27. Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction
28. Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures
29. Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer
30. Effect of annealing temperature on the electrical and structural properties of V/p-GaN Schottky structures
31. Statistical distribution of barrier heights, current conduction mechanism and voltage-dependent capacitance–frequency characteristics of Au/Fe3O4/n-GaN heterojunction
32. On the current conduction mechanisms of WO3/n-Ge Schottky interfaces
33. Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n-type InP
34. Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range
35. Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure
36. Energy-level alignment and electrical properties of Al/p-type Si Schottky diodes with sorbitol-doped PEDOT:PSS as an organic interlayer
37. Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode
38. Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier
39. Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer
40. Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices
41. Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP
42. Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer
43. Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H–SiC
44. Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer
45. CdS microflowers and interpenetrated nanorods grown on Si substrate: Structural, optical properties and growth mechanism
46. Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures
47. Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode
48. Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures
49. Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode
50. Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP
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