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Your search keyword '"Rathi, M. K."' showing total 9 results
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9 results on '"Rathi, M. K."'

2. Retracted: Wide dynamic range tranimpedance amplifier using peaking capacitance technique for high speed optical wireless communication system

Author

Chandio, A. F., Das, B., Rathi, M. K., Marzuki, N. B., Abdullah, M. F. L, Khan, M. S. A., and Pandey, B.

Subjects
Bandwidth, Gain, Optical preamplifier, Optical transceivers
Abstract

This article was withdrawn and retracted by the Journal of Fundamental and Applied Sciences and has been removed from AJOL at the request of the journal Editor in Chief and the organisers of the conference at which the articles were presented (www.iccmit.net). Please address any queries to editor@jfas.info.

Published
2018

3. High antimony content GaAs1-zNz–GaAs1-ySby type-II “W” structure for long wavelength emission.

Author

Rathi, M. K., Khandekar, A. A., Song, Xueyan, Babcock, S. E., Mawst, L. J., and Kuech, T. F.

Subjects
*ANTIMONY, *LASERS, *FIBER optics, *OPTICAL communications, *OPTOELECTRONIC devices
Abstract

GaAs1-zNz–GaAs1-ySby type-II “W” structures were studied for long wavelength (1300–1600 nm) applications. These structures were grown on a GaAs substrate using metal-organic vapor phase epitaxy. The antimony and nitrogen compositions in the pseudomorphic GaAs1-ySby and GaAs1-zNz were estimated by separately growing GaAs1-ySby–GaAs and GaAs1-zNz–GaAs strained superlattices. X-ray studies indicate that a maximum of y=0.37 antimony can be incorporated in the pseudomorphic GaAs1-ySby film grown using triethyl gallium (TEGa), trimethyl antimony (TMSb) and arsine (AsH3) at the growth temperatures employed. A postgrowth anneal was used to improve the emission intensity but leads to shifts in the emission wavelength. An emission wavelength as long as 1.47 μm was realized using a GaAs1-zNz–GaAs1-ySby–GaAs1-zNz structure. [ABSTRACT FROM AUTHOR]

Published
2009
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