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High coercivity CoFe2O4 (CFO) thin films with large-area are very desirable for applications. Here, we report La0.7Sr0.3MnO3 (LSMO) layer decoration effects on coercivity in CFO thin films by solution processing. With LSMO layer decoration, the coercivity increases initially and then decreases with increasing LSMO layer thickness. Strain induced by the mismatched thermal expansion coefficient and magnetostrictive coefficient as well as the interfacial magnetic exchange coupling between CFO and LSMO are investigated. The room temperature out-of-plane and in-plane coercivity reached 7.6 and 4.9 kOe, respectively, are obtained, which are the highest values in solution derived CFO thin films. The improved coercivity is beneficial for applications and provides a facile route to enhance coercivity of CFO thin films through surface modification by soft magnetic layers. [ABSTRACT FROM AUTHOR]

Transparent conducting p-type Bi2Sr2Co2Oy thin films have been first grown on SrTiO3 substrates by a chemical solution deposition, showing c-axis self-orientation. The figure of merit can reach as high as 800 MΩ-1, which is the highest value for p-type transparent conducting thin films by solution methods. [ABSTRACT FROM AUTHOR]

Upper critical field of polycrystalline δ-Mo1-xZrxN ( 0x0.3) thin films by sol-gel was investigated. It showed that the upper critical field was continuously improved with Zr doping content, and the improvement of10 T in upper critical field was mainly attributed to the combined effects of obvious enhancements in normal-state resistivity with slight changes in Tc, obvious decrease in crystallite/grain size and enhanced microstrains. Flux jump was observed in low-level doped thin films due to enhanced critical current density by Zr doping. Finally, the vortex phase diagram of δ-Mo1-xZrxN thin films was presented, which will provide guidance for investigation about the vortex mechanisms of δ-Mo1-xZrxN thin films. [ABSTRACT FROM AUTHOR]

High room temperature coercivity CoFe2O4 (CFO) thin films are desirable in view of many applications, which is seldom achieved over 3 kOe in solution deposited CFO thin films. Herein, grain growth kinetic is investigated in the solution derived CFO thin films with coercivity larger than 4 kOe, showing a relaxation mechanism. The coercivity and magnetization increase initially and then decrease with increasing dwell time. The high coercivity is originated mainly from the critical grain size and the growth strain induced by the small crystallites and poorly developed grains. The results will provide a route to fabricate larger-area CFO thin films with high coercivity on silicon wafers by low-cost solution processing. [ABSTRACT FROM AUTHOR]