Ye, Shuming, Duan, Xiaoxiao, Wang, Yong, Chen, Tao, Xu, Tian, Ke, Shaoying, Rong, Kang, Liu, Ruliang, Li, Xiaonan, Lv, Xinze, Yang, Jie, Wang, Rongfei, Qiu, Feng, Cui, Haoyang, and Wang, Chong
Silicon (Si) has been established for a long time as the footing stone of the whole microelectronics industry. This does not come into true in the photonics domain yet, where the limited degrees of freedom in material design and the indirect bandgap are the major constraints. Therefore, making Si as an efficient light-emitting material is an important approach for Si photonics, even for achieving the all-Si-based photoelectronic and microelectronic integration engineering. Here we reported a facile and effective method for enhancing the photoluminescence (PL) from the Si+/N+ ion co-implanted Si film by coating the polystyrene (PS)-sphere@metal complex core-shell structure upon the Si film on insulator (SOI) wafers. The PL enhanced phenomena have been demonstrated in the violet-blue waveband by the three kinds of single-layer PS sphere array capping with different metal films (namely Ag, Au, and Al), respectively. The experiments and theoretic calculation based on the finite difference time domain (FDTD) model indicate that the plasma resonance is responsible for the PL enhancement, and these core-shell structures take advantage of both metal plasma and photonic crystal in the PL enhancing process. • The photoluminescence origin of Si+-N+ co-implanted Si film on insulator wafers was studied and identified systematically. • After coating the polystyrene-sphere@metal (Al, Au and Ag) core-shell structure upon the Si film on insulator wafers, the photoluminescence intensity has been enhanced. • The mechanism for the mode of local surface plasmon resonance was investigated through the FDTD model. [ABSTRACT FROM AUTHOR]