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6 results on '"Rony, M. W."'

1. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Author

Li, Kan, primary, Luo, Xuyi, additional, Rony, M. W., additional, Gorchichko, Mariia, additional, Hiblot, Gaspard, additional, Van Huylenbroeck, Stefaan, additional, Jourdain, Anne, additional, Alles, Michael L., additional, Reed, Robert A., additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2023
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3. A System-Level Modeling Approach for Simulating Radiation Effects in Successive-Approximation Analog-to-Digital Converters

Author

Rony, M. W., primary, Zhang, En Xia, additional, Reaz, Mahmud, additional, Li, Kan, additional, Daniel, Andrew, additional, Rax, Bernard, additional, Adell, Philippe, additional, Kauppila, Jeffrey, additional, Karsai, Gabor, additional, Holman, Tim, additional, Reed, Robert A., additional, Witulski, Arthur, additional, and Schrimpf, Ronald D., additional

Published
2021
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4. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Author

Li, Kan, Luo, Xuyi, Rony, M. W., Gorchichko, Mariia, Hiblot, Gaspard, Van Huylenbroeck, Stefaan, Jourdain, Anne, Alles, Michael L., Reed, Robert A., Zhang, En Xia, Fleetwood, Daniel M., and Schrimpf, Ronald D.

Abstract

The temperature dependence of low-frequency noise is investigated from 80 to 320 K for nMOS and pMOS bulk Si FinFETs with SiO2/HfO2 gate dielectrics. Both types of devices show excellent stability during bias-temperature stress and high total-ionizing dose (TID) irradiation. nMOSFET 1/ $f$ noise generally decreases as measuring temperature increases, with three prominent individual defect-related peaks. These peaks in noise magnitude are most likely due to hydrogen shuttling near the interface and/or O vacancies in the HfO2. In contrast, the 1/ $f$ noise in pMOSFETs generally increases with increasing temperature without prominent peaks in noise magnitude. The gate-voltage dependence of low-frequency noise also is evaluated at different temperatures for both device types. Results confirm that the nMOS devices have effective border-trap energy distributions that are nonuniform and generally increase toward midgap, and the pMOS devices have more uniform defect-energy distributions that increase monotonically toward the valence band.

Published
2023
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5. Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs

Author

Rony, M. W., primary, Samsel, Isaak K., additional, Zhang, En Xia, additional, Sternberg, Andrew, additional, Li, Kan, additional, Reaz, Mahmud, additional, Austin, Stephanie M., additional, Alles, Michael L., additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2021
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