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A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition through the USB port. We find that it allows succesful ultra low noise studies of surfaces at cryogenic temperatures. We show results on different compounds, a type II Weyl semimetal (WTe$_2$), a quasi two-dimensional dichalcogenide superconductor (2H-NbSe$_2$), a magnetic Weyl semimetal (Co$_3$Sn$_2$S$_2$) and an iron pnictide superconductor (FeSe)., Comment: Instrumentation paper

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit excellent electrical and optical properties. Highly efficient photocurrent (PC) generation is reported in vertical few layer MoS2 devices contacted with semitransparent metallic electrodes. The light absorption of the device can be improved by fabricating vertical photodevices using few layer flakes, achieving a photoresponse of up to 0.11 A/W and an external quantum efficiency (EQE) of up to 30%. Because of the vertical design, the distance between electrodes can be kept in the range of a few nanometers, thus substantially reducing the collection time of photogenerated carriers and increasing the efficiency of the devices. The wavelength dependent PC, photoresponsivity, and EQE are measured over a photon energy range from 1.24 to 2.58 eV. Compared to previous in plane and vertical devices, these vertical few layer MoS2 photodevices exhibit very short response time, 60 ns, and a cutoff frequency of 5.5 MHz, while maintaining high photoresponsivity., Comment: Main text: 9 pages, 4 figures. Supp. Info: 8 pages, 5 figures

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers (up to 7 layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions., Comment: Main text: 10 pages, 3 figures. Supp. Info: 10 pages, 7 figures

We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite in a broad range of the visible spectrum through a fit of the acquired spectra to a Fresnel law based model., Comment: Main text (6 figures) + Supp. Info. (6 figures)

Using the break junction (BJ) technique we show that Au(RS)2 units play a significant role in thiol-terminated molecular junctions formed on gold. We have studied a range of thiol-terminated compounds, either with the sulfur atoms in direct conjugation with a phenyl core, or bonded to saturated methylene groups. For all molecules we observe at least two distinct groups of conductance plateaus. By a careful analysis of the length behavior of these plateaus, comparing the behavior across the different cores and with methyl sulfide anchor groups, we demonstrate that the lower conductance groups correspond to the incorporation of Au(RS)2 oligomeric units at the contacts. These structural motifs are found on the surface of gold nanoparticles but they have not before been shown to exist in molecular-break junctions. The results, while exemplifying the complex nature of thiol chemistry on gold, moreover clarify the conductance of 1,4-benzenedithiol on gold. We show that true Au-S-Ph-S-Au junctions have a relatively narrow conductance distribution., Comment: 9 pages, 7 figures

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices., Comment: 24 pages, 9 figures main text, 4 figures supporting information

We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO structures. The structures show rectifying I-V characteristics, with rectification ratios strongly dependent on the applied load. To understand these results, we compare the experimental I-Vs with a double Schottky barrier model, which is in good agreement with our experimental results and allows us to extract quantitative information about the electronic properties of the tip/MoS2/ITO structures and their dependence on the applied load. Finally, we test the stability of the studied structures using them as mechanically tunable current rectifiers., Comment: Main text: 14 pages, 4 figures. Supp. Info.: 11 pages, 5 figures. We include a Matlab script to numerically solve the back-to-back diode circuit

In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells., Comment: 29 pages, 5 figures in the main text, 9 figures in the Supporting Information. in J. Mater. Chem. C, 2016

The effect of quantum confinement in the optical absorption spectra of atomically thin {\alpha}-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated {\alpha}-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors., Comment: 3 Figures + 6 Supp. Info. figures

The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors (exploiting its narrow bandgap) and for p-n junctions based on the stacking of MoS2 (n-doped) and franckeite (p-doped), Comment: 5 Figures (main text) + 19 Supp. Info. Figures

The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far., Comment: 54 pages

Molecular junctions are a versatile test bed for investigating thermoelectricity on the nanoscale1-10 and contribute to the design of new cost-effective environmentally-friendly organic thermoelectric materials11. It has been suggested that transport resonances associated with the discrete molecular levels would play a key role in the thermoelectric performance12,13, but no direct experimental evidence has been reported. Here we study single-molecule junctions of the endohedral fullerene Sc3N@C80 connected to gold electrodes using a scanning tunnelling microscope (STM). We find that the magnitude and sign of the thermopower depend strongly on the orientation of the molecule and on applied pressure. Our theoretical calculations show that the Sc3N inside the fullerene cage creates a sharp resonance near the Fermi level, whose energetic location and hence the thermopower can be tuned by applying pressure. These results reveal that Sc3N@C80 is a bi-thermoelectric material, exhibiting both positive and negative thermopower, and provide an unambiguous demonstration of the importance of transport resonances in molecular junctions.

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor., Comment: Main text (11 figures) and supporting information (11 figures)

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier., Comment: 4 figures + 3 supp.info. figures

We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature., Comment: 24 pages, 10 figures

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices., Comment: 16 pages main text + 13 pages SI

By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition, we find that the monolayer and bilayer exhibits a transition from a direct to indirect gap when the strain is increased in the direction of easy transport. The ability to control the band gap and its nature can have an impact in the use of TiS$_3$ for optical applications. We verify our prediction via optical absorption experiments that present a band gap increase of up to 10\% upon tensile stress application along the easy transport direction., Comment: 12 pages, 5 figures, latex2e (pdflatex)

The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by developing a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence that only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other two-dimensional systems, including non-semiconducting materials where scanning photoluminescence cannot be employed., Comment: Main text: 4 figures. Supporting information: 4 figures

We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions., Comment: 10 pages, 4 figures

The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies., Comment: 3 pages, 7 figures

We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interaction strength, varies spatially from one position to other of the graphene supercell. This inhomogeneity in the electronic properties of graphene on Ru(0001) results from local variations of the carbon-ruthenium interaction due to the lattice mismatch between the graphene and the Ru(0001) lattices., Comment: 6 Pages, 3 figures

Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves., Comment: It includes supporting information

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2., Comment: 13 pages, 3 figures, include supporting information

An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are performed onto the sputtered cluster to mechanically anneal the tip apex and thus to ensure the stability of the tip. The efficiency of this method is confirmed by comparing the topography and spectroscopy data acquired with either unprepared or in situ prepared tips on epitaxial graphene grown on Ru (0001). We demonstrate that the use of in situ prepared tips increases the stability of the scanning tunneling images and the reproducibility of the spectroscopic measurements., Comment: 9 Pages, 4 figures (including supp. material)

We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects. Additionally, ultrathin mica shows low pre-strain and can withstand reversible deformations up to tens of nanometers without breaking. The low pre-tension and high Young's modulus and breaking force found in these ultrathin mica layers demonstrates their prospective use as a complement for graphene in applications requiring flexible insulating materials or as reinforcement in nanocomposites., Comment: 9 pages, 5 figures, selected as cover of Nano Research, Volume 5, Number 8 (2012)

We fabricate and characterize carbon-fiber tips for their use in combined scanning tunneling and force microscopy based on piezoelectric quartz tuning fork force sensors. An electrochemical fabrication procedure to etch the tips is used to yield reproducible sub-100-nm apex. We also study electron transport through single-molecule junctions formed by a single octanethiol molecule bonded by the thiol anchoring group to a gold electrode and linked to a carbon tip by the methyl group. We observe the presence of conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction., Comment: Conference Proceeding (Trends in NanoTechnology 2011, Tenerife SPAIN); Nanoscale Research Letters, (2012) 7:254

We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test experiment. MoS2 sheets show high elasticity and an extremely high Young's modulus (0.30 TPa, 50% larger than steel). These results make them a potential alternative to graphene in applications requiring flexible semiconductor materials., Comment: Conference Proceeding (Trends in NanoTechnology 2011, Tenerife SPAIN); Nanoscale Research Letters, (2012) 7:233

We use a piezoelectric quartz tuning fork to calibrate the displacement of ceramic piezoelectric scanners which are widely employed in scanning probe microscopy. We measure the static piezoelectric response of a quartz tuning fork and find it to be highly linear, non-hysteretic and with negligible creep. These performance characteristics, close to those of an ideal transducer, make quartz transducers superior to ceramic piezoelectric actuators. Furthermore, quartz actuators in the form of a tuning fork have the advantage of yielding static displacements comparable to those of local probe microscope scanners. We use the static displacement of a quartz tuning fork as a reference to calibrate the three axis displacement of a ceramic piezoelectric scanner. Although this calibration technique is a non-traceable method, it can be more versatile than using calibration grids because it enables to characterize the linear and non-linear response of a piezoelectric scanner in a broad range of displacements, spanning from a fraction of a nanometer to hundreds of nanometers. In addition, the creep and the speed dependent piezoelectric response of ceramic scanners can be studied in detail., Comment: 9 pages, 3 figures

We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers., Comment: 11 pages, 7 figures (including supplementary information)

We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential difference measurements using electrostatic force microscopy permit us to obtain the average charge density but it does not provide enough resolution to identify individual charges. We find that the tunneling current decay constant, which is related to the local tunneling barrier height, enables one to probe the electronic properties of graphene distorted at the nanometer scale by individual charged impurities. We observe that such inhomogeneities do not show long range ordering and their surface density obtained by direct counting is consistent with the value obtained by macroscopic charge density measurements. These microscopic perturbations of the carrier density significantly alter the electronic properties of graphene, and their characterization is essential for improving the performance of graphene based devices., Comment: 22 pages, 13 figures (including supporting information); Carbon (2011)

We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists., Comment: 11 pages, 5 figures, 1 graphical abstract

We study electron transport through single-molecule junctions formed by an octanethiol molecule bonded with the thiol anchoring group to a gold electrode and the opposing methyl endgroup to a carbon tip. Using the scanning tunneling microscope based break junction technique, we measure the electrical conductance of such molecular junctions. We observe the presence of well-defined conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction., Comment: 10 pages, 5 figures (including supplementary information)

We have studied the dynamics of quartz tuning fork resonators used in atomic force microscopy taking into account mechanical energy dissipation through the attachment of the tuning fork base. We find that the tuning fork resonator quality factor changes even for the case of a purely elastic sensor-sample interaction. This is due to the effective mechanical imbalance of the tuning fork prongs induced by the sensor-sample force gradient which in turn has an impact on the dissipation through the attachment of the resonator base. This effect may yield a measured dissipation signal that can be different to the one exclusively related to the dissipation between the sensor and the sample. We also find that there is a second order term in addition to the linear relationship between the sensor-sample force gradient and the resonance frequency shift of the tuning fork that is significant even for force gradients usually present in atomic force microscopy which are in the range of tens of N/m., Comment: 9 pages, 3 figures and supplemental information

We report the fabrication and the characterization of carbon fibre tips for their use in combined scanning tunnelling and force microscopy based on piezoelectric quartz tuning fork force sensors. We find that the use of carbon fibre tips results in a minimum impact on the dynamics of quartz tuning fork force sensors yielding a high quality factor and consequently a high force gradient sensitivity. This high force sensitivity in combination with high electrical conductivity and oxidation resistance of carbon fibre tips make them very convenient for combined and simultaneous scanning tunnelling microscopy and atomic force microscopy measurements. Interestingly, these tips are quite robust against occasionally occurring tip crashes. An electrochemical fabrication procedure to etch the tips is presented that produces a sub-100 nm apex radius in a reproducible way which can yield high resolution images., Comment: 14 pages, 10 figures

We have performed an experimental characterization of the dynamics of oscillating quartz tuning forks which are being increasingly used in scanning probe microscopy as force sensors. We show that tuning forks can be described as a system of coupled oscillators. Nevertheless, this description requires the knowledge of the elastic coupling constant between the prongs of the tuning fork, which has not yet been measured. Therefore tuning forks have been usually described within the single oscillator or the weakly coupled oscillators approximation that neglects the coupling between the prongs. We propose three different procedures to measure the elastic coupling constant: an opto-mechanical method, a variation of the Cleveland method and a thermal noise based method. We find that the coupling between the quartz tuning fork prongs has a strong influence on the dynamics and the measured motion is in remarkable agreement with a simple model of coupled harmonic oscillators. The precise determination of the elastic coupling between the prongs of a tuning fork allows to obtain a quantitative relation between the resonance frequency shift and the force gradient acting at the free end of a tuning fork prong., Comment: 16 pages, 6 figures, 2 Tables

We present a systematic study of the optical contrast of diselenide (NbSe2) and molybdenum disulphide (MoS2) flakes deposited onto Si wafers with a thermally grown SiO2 layer. We measure the optical contrast of flakes whose thickness ranges from 200 layers down to a monolayer using different illumination wavelengths in the visible spectrum. The refractive index of these thin crystals has been obtained from the measured optical contrast dependence on the flake thickness by using a simple model based on the Fresnel law. With the refractive index of these NbSe2 and MoS2 crystallites, the optical microscopy data can be quantitatively analyzed to determine the thickness of the flakes in a fast and non-destructive way., Comment: 8 pages, 3 figures and 3 supplemental figures

We study pentanedithiol molecular junctions formed by means of the break-junction technique with a scanning tunneling microscope at low temperatures. Using inelastic electron tunneling spectroscopy and first-principles calculations, the response of the junction to elastic deformation is examined. We show that this procedure makes a detailed characterization of the molecular junction possible. In particular, our results indicate that tunneling takes place through just a single molecule., Comment: 5 pages, 4 figures (accepted in Phys. Rev. B)

We report on tunneling spectroscopy experiments in small grains of the new binary intermetallic superconductor MgB2. Experiments have been performed at 2.5 K using a low temperature scanning tunneling microscope. Good fit to the BCS model is obtained, with a gap value of 2 meV. In the framework of this model, this value should correspond to a surface critical temperature of 13.2 K. No evidence of gap anisotropy has been found., Comment: 3 pages with 3 figures, resubmitted to Phys.Rev.Lett 28-February