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1. Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy

Author

Derluyn, J., Moerman, I., Leys, M.R., Patriarche, G., Misiewicz, J., Sek, G., Rycko, K., Rudno-Rudzinski, W., and Kudraweic, R.

Subjects
Quantum wells -- Research, Gallium -- Research, Gallium -- Chemical properties, Nitrogen compounds -- Research, Nitrogen compounds -- Chemical properties, Physics
Abstract

Nitrogen incorporation behavior in GaNAs bulk layers and GaInNAs quantum wells (QWs), grown by metalorganic chemical vapor deposition is discussed. The optical quality of the quantum wells is linked to the abruptness of the QWs and the nitrogen content.

Published
2003

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