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Time series data on area, production and productivity of major millets (2000-01 to 2019- 20) was analyzed for Bundelkhand region of Uttar Pradesh state. Sorghum was the most important millet crop that accounted for highest area (36.6%) and (34%) of total millet area and production in UP state, respectively. Chitrakoot district contributed highest area (31.6%) under millets. Among all the millets, pearl millet recorded highest growth rate in area (0.97%), production (3.57%) and productivity (1.59%) with low instability index for area. The overall area and production of millet crops recorded decline in all the seven districts of Bundelkhand region during overall study period (2000-20). Lalitpur district recorded highest decline in area (-22.02%), followed by Chitrakoot (-10.82%) and Jhansi district (- 10.63%) during overall study period, while during the same period Banda district recorded a growth in area (1.16%) and production (4.77 %) of pearl millet. The overall area, production and productivity of millets registered a decline in Bundelkhand region during 2000-20. This calls for aggressive promotional activities for enhancing millets production in the region.

The paper examines the temporal changes in the area, production and productivity of major pulse crops in Bundelkhand region of UP during last two decades (2000-2020). Published data on area, production and productivity was utilized for the purpose. Study period was divided into period-I (2000-10) and period II (2010-20) and overall period III (2000-2020). Consistent decline in overall pulse area (-0.64%) and production (-0.36%) was observed, however, the overall pulse productivity registered marginal upward trend (0.06%) during the analysis period (2000-20). Chickpea (-5.03% and -0.64 %) and lentil (-0.51% and – 4.37%) crops registered highest decline in overall area and production respectively. Urdbean registered highest decline (-6.52%) in productivity during the said period. In contrast, mungbean crop followed by urdbean recorded highest growth in area (3.48%, 3.02%), and production (3.61%, 2.71%), while field pea registered highest growth in productivity (1.96%). Instability of pulse production over the study period was high (30.31%), however the instability in pulse area was low (11.7%). Analysis of inter district variation in pulse performance reflected decline in area and production of pulses in all districts except in Lalitpur. Inter district variations helped in identifying the potential districts in the Bundelkhand region of UP state.

Thermally grown SiO2 thin films on a silicon substrate implanted with 100 keV silicon negative ions with fluences varying from 1 × 1015 to 2 × 1017 ions cm−2 have been investigated using Electron s...

100 keV energetic siliconnegative ions with fluences varying from 1 x 10 15 to 2 x 10 17 ions-cm-2 are implanted in SiO2 thin film of thickness 300 nm grown on silicon substrate. Structural properties of as-implanted samples have been investigated using glancing angle X-ray diffraction (GAXRD) and Raman Scattering. The topographical studies have been done by Atomic Force Microscopy (AFM) measurements. X-ray diffraction spectra of non-implanted sample showed the presence of broad XRD peak of SiO2 at 22° and silicon peak at 54°with d∼0.177 nm corresponding to (311) reflection. The GAXRD investigation of implanted samples showed increase in the X-ray peak intensity for glancing angle 2° as compared to 1.5°. Particle size decreases and found to vary with ion fluences at the angle of 2°as compared with 1.5°, this may be due to cluster formation varies within SiO2 matrix with depth. Raman scattering measurements reveals that theband spectra about 1100-1200 cm-1 appears due to oxide layer covering the silicon nanoclusters formed as well as the Si-O-Si stretching vibrations within SiO2 matrix. AFM studies reveal that as compared to non-implanted samples the roughness of implanted samples decreased after implantation.

Pulses assume special significance in the cropping systems and daily diets in India. Traditionally pulses are used for human consumption as dehusked seed splits after minimal processing. They are also the important ingredient of popular Indian snacks. The present paper reviews the research studies done on various components of value chain of pulses and draws upon the learnings. The value chains of pulses in India are long and complexed with a number of actors performing specific roles. The input providers, farmers, aggregators, wholesaler, commission agents, retailers, processors, millers, consumers, financial institutions, ware houses, researchers and policy makers together work to build the pulses value chains in India.

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1 × 1015 and 4 × 1017 ions cm−2 at 100 k...

100 keV silicon negative ions implanted SiO2 thin films with fluences varying from 1 x 10 15 to 2 x 10 17 ion cm−2 were investigated using Electron spin resonance (ESR) at low temperature and Energy dispersive X-ray spectroscopy (EDX) techniques. ESR studies showed the presence of oxygen vacancies related to silicon dangling bonds (Pb-centres) at g-values ranging between 2.0034 to 2.0038. The ESR signal intensity was found to increase with decrease in the temperatures from 223K to 123K. The defect density estimated from ESR signal was found to increase from 1.9 x 1016 cm-2 to 3.5 x 1016 cm-2 with decrease in the temperature from 223K to123K. EDX studies revealed the decrease in the atomic percentage ratio of oxygen to silicon with respect to increase in the silicon ion fluences in SiO2 thin film layer. EDX results showed the increase in Si-Si bonds formed as compared to Si-O bonds due to breakdown of SiO2 lattice after implantation.

In recent years negative ion implantation technology has established itself as a very good alternative technique to positive ion implantation, as it has the advantage of low surface charging voltage effect, which is one of the essential criteria in designing of large scale integrating devices. The present work describes the modification of structural and electrical properties of semi insulating GaAs sample implanted with 100 keV silicon negative ions with fluences varying from 5 x 1014 to 2 x 1016 ions cm−2. The Glancing angle X-ray diffraction study showed decrease in the intensity of GaAs (311) Bragg’s plane for implanted sample compared to un-implanted sample. The crystallite size calculated from FWHM and Debye – Scherrer formula was found to vary from 10.20 nm to 11.20 nm. The current-voltage measurements showed increase in the conductivity with respect to ion fluence for implanted samples.

Background Prevention of genetic disorders in the family is gaining significance because of the burden of these untreatable and devastating disorders. Sir Ganga Ram Hospital (SGRH) has been at the forefront for prenatal diagnosis (PND) in India for the last 2 decades. Aims and objectives Evaluation of pregnant women for prenatal diagnosis in year 2017, and comparison with the centre's historical 5-year data published in 2003. Material and methods Pregnant women attending genetic clinics at SGRH and prenatal samples received from elsewhere were enrolled. Cytogenetic, molecular, biochemical and non-invasive methods were utilized for PND. Results Among 3351 pregnant women from SGRH, 2530 presented with obstetric indications, and 821 women had a background family history. In cytogenetic laboratory, 706 prenatal samples from SGRH and 553 samples from elsewhere were analyzed. Additional 623 women opted for Non-invasive prenatal test (NIPT) for aneuploidies. In molecular genetics laboratory, 733 prenatal samples were analyzed. Highlights in the study included the introduction of NIPT, and other major advances - chromosomal microarrays and next-generation sequencing enabling PND in 130 and 20 cases, respectively. NIPT detected 10 cases of aneuploidy, with 10% false positivity in 623 women. Comparison with 5-year data from SGRH revealed a 6–10 fold rise in number of PNDs being performed, and addition of newer indications, materialized by newer methods of NGS and CMAs. Conclusion Advanced genetic testing methodologies like NIPT, NGS and CMA are rapidly changing the scenario of prenatal diagnosis in our country, which is reflected in our data of last one year.

In the present work, the effects of swift silver ion irradiation in crystalline gallium phosphide samples with various fluences ranging between 1 × 1011 and 2 × 1013 ions cm−2 have been described. Atomic force microscopy images of the samples irradiated with different fluences showed the existence of hillocks at the surface, the diameter and density of these clusters were found to be depend on the ion fluence. As the ion fluence increased (⩾1 × 1013 ions cm−2), the big size hillocks having arbitrary shapes were observed due to outflow of the molten material to the sample surface or defect induced swelling of track areas accumulated during the track overlapping. Phonon confinement model employed to first order Raman scattering from longitudinal optical phonon mode revealed the decrease in phonon coherence length from 73.0 nm to 23.7 nm with the increase in ion fluence from 1 × 1012 to 2 × 1013 ion cm−2.

A comparative study of three nanoparticles Zn, ZnO and CuO doped in Nematic Liquid Crystal Polymer System (NLCPS) with different concentration was studied. The NLCPS combines the orientational ordering properties of liquid crystals, polymer and nanoparticles. The investigations were performed using Polarizing Microscopic Studies (PMS) and Fabry Perot Spectroscopic Studies (FPSS). After doping Zn, ZnO and CuO nanoparticles with liquid crystal polymer system, the response was studied at high temperature. The phase transition temperatures obtained by FPSS were confirmed by PMS. LCPS is useful for displays and may also be used for tunable wavelength filters, tunable liquid-crystal lenses and polarization-independent phase modulators.

p-Type silicon samples irradiated with 70 MeV 56Fe5+ ions for various fluences varying between 5 × 1012 and 4 × 1014 ions cm−2 have been studied using spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The microstructure of the irradiated samples was modeled from ellipsometric data, using a multilayer optical model and Bruggeman effective medium approximation. The values of pseudodielectric function, absorption coefficient and Penn gap energy were determined with respect to ion fluence. The effective medium analysis suggests that the superficial silicon layer can be explained as a mixture of crystalline and damaged silicon. The thickness of the damaged layer and percentage of voids present in the layer were found to increase with increase in the ion fluence. The effect of disorder on the interband optical spectra, especially on the critical point E1 at 3.4 eV was found to vary with ion fluence. A red shift in the critical point E1 with increasing ion fluence was observed. FTIR study showed of silicon samples irradiated with 70 MeV 56Fe5+ ions produced the oscillations in the spectral region 1000–400 cm−1. As irradiated sample showed more pronounced fringes, while contrast of the fringes and amplitude both were found to decrease with increase in depth.

Indium phosphide sample was irradiated with 200 MeV Ag9+ ions for the fluence of 2 × 1013 ions cm−2. The sample was chemically etched down up to 240 nm depth to investigate the distribution of defects at different regions. Raman scattering and glancing incidence X-ray diffraction spectra were recorded at different depths. The stress estimated from Raman shift was found to increase with depth up to 160 nm and thereafter it decreased and at a depth of 224 nm sample did not show any stress. Phonon coherence length estimated from the Phonon Confinement Model was found to vary between 43 and 18 nm with respect to depth. Glancing incidence X-ray diffraction results revealed the decrease in crystallite size from 16.12 to 1.00 nm in different depth regions.

The beam column joint is the crucial zone in a reinforced concrete moment resisting frame. It is subjected to large forces during severe ground shaking and its behaviour has a significant influence on the response of the structure. The assumption of rigid joint fails to consider the effects of high shear forces developed within the joint. The shear failure is always brittle in nature which is not an acceptable structural performance especially in seismic conditions. This paper presents a review of the postulated theories associated with the behaviour of joints. Understanding the joint behaviour is essential in exercising proper judgments in the design of joints. The paper discusses about the seismic actions on various types of joints and highlights the critical parameters that affect joint performance with special reference to bond and shear transfer.

In this study, seismic analysis of high rise building frames have been carried out considering four buildings of different geometrical plan but same area , three diaphragms and four seismic zones. In this way total 48 frames were analysed for 27 load combinations. STADD-Pro software has been used for analysis purpose. Structural analyses results are collected in terms of maximum moments in columns and beams, storey displacement, peak storey displacement which are critically analysed to quantify the effects of various parameters.

This paper presents a study carried out on reinforced concrete infilled beams. In reinforced concrete beams, less stressed concrete near neutral axis can be replaced by some light weight material like bricks to reduce the weight of the structure and also achieve the economy. Infilled zone is obtained with the help of stress block diagram, used for limit state design of reinforced concrete beams as per IS 456. Method of initial functions is used for the analysis of infilled reinforced concrete composite beams. The method of initial function (MIF) is an analytical method of elasticity theory. The results obtained by MIF are compared with those predicting by Finite Element Method (FEM) based software ANSYS, and it is observed that they are comparable.

Behaviour of beam depends on its depth. A beam is considered as deep, if the depth span ratio is 0.5 or more. In the available beam theories, we have to apply correction in case of deep beams. In the present work, method of initial functions (MIF) is used to study the effect of depth on the behaviour of concrete beam. The MIF is an analytical method of elasticity theory. It gives exact solutions of different types of problems without the use of assumptions about the character of stress and strain. In this method, no correction factor is required for beams having larger depth. Results are obtained for three different cases of depth span ratios and compared with available theory and finite element method-based software ANSYS. It is observed that deep beam action starts at depth span ratio equal to 0.25.

Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of SiGaAs in GaAs sample after implantation with 50[Formula: see text]keV silicon negative ions with fluences varying between [Formula: see text] and [Formula: see text] ions cm[Formula: see text]. The GaAs samples were investigated using X-ray photoelectron spectroscopy (XPS), UV-Vis.-NIR spectroscopy and X-ray diffraction (XRD) techniques. The X-ray photoelectron spectra for unimplanted sample showed peaks at binding energy of 18.74[Formula: see text]eV and 40.74[Formula: see text]eV indicating Ga3d and As3d core level, whereas the corresponding core level peaks for implanted sample were observed at binding energy of 19.25[Formula: see text]eV and 41.32[Formula: see text]eV. The shift in Ga3d and As3d core levels towards higher binding energy side in the implanted sample with respect to unimplanted sample were indicative of change in chemical state environment of Ga–As bond. The relative atomic percentage concentration of elemental composition measured using casa XPS software showed change in As/Ga ratio from 0.89 for unimplanted sample to 1.13 for sample implanted with the fluence of [Formula: see text] ion cm[Formula: see text]. The UV-Vis-NIR spectra showed absorption band between 1.365[Formula: see text]eV and 1.375[Formula: see text]eV due to the formation of intersubband of SiGaAs for fluences greater than [Formula: see text] ion cm[Formula: see text]. The GaAs crystallite size calculated using Brus formula was found to vary between 162[Formula: see text]nm and 540[Formula: see text]nm, respectively. The XRD spectra showed the presence of Bragg’s peak at 53.98∘ indicating (311) silicon reflection. The silicon crystallite size determined from full width at half maxima (FWHM) of (311) XRD peak was found to vary between 110[Formula: see text]nm and 161[Formula: see text]nm, respectively.

The effects of irradiation of 200 MeV silver ions on gallium phosphide with various fluences varying from 1×1011 to 2×1013 ions cm−2 were investigated with spectroscopic ellipsometry and atomic force microscopy (AFM) measurements. The refractive index and extinction coefficient measured in ultraviolet, visible and infrared regimes were found to vary with ion fluence. The optical energy band gaps of the irradiated samples estimated from the absorption coefficient were found to vary from 2.27 to 2.19 eV with increase in ion fluence. The surface morphology of non-irradiated and samples irradiated with various fluences was examined using AFM. As ion fluence increases, the nano-size hills were developed on the surface of gallium phosphide. The shape, size, density of hills and r.m.s. roughness of the samples irradiated with various ion fluences were found to depend on the ion fluence.

Surface modification of indium phosphide (InP) irradiated with 100 MeV 56Fe7+ ions for various ion fluences ranging from 5×1012 to 2×1014 cm−2was studied using Raman scattering, Fourier transform infrared (FTIR) and atomic force microscopy. The shift in the Raman peak revealed the presence of stress in the irradiated samples. The average crystallite size obtained by analyzing Raman spectra with the phonon-confinement model decreased with ion fluence. The observed interference fringes in the Fourier transform reflectance spectra of irradiated InP indicate the presence of disorder and defects in the surface region of irradiated InP. The power spectral density obtained from Atomic Force Microscopy (AFM) measurements showed the surface evolution due to diffusion process up to ion fluence 5×1013 cm−2; however, surface diffusion process was less dominant at higher ion fluences.

This paper presents a study carried out on reinforced concrete brick-filled composite beams. In reinforced concrete beams, less stressed concrete near neutral axis can be replaced by some light weight material like bricks to reduce the weight of the structure and also achieve the economy. Brick replacement zone is obtained with the help of stress block, used for limit state design of RC beams. Method of initial functions is used for the analysis of reinforced concrete brick filled composite beams. The method of initial function (MIF) is an analytical method of elasticity theory. Moreover, by saving concrete we save cement which also reduces the green house gases emissions. In this way sustainability can be achieved.

During a time when consumers are getting saturated with traditional media advertising, product placement via In-Film Advertising in movies, in television and other media are methods of advertising that reaches con- sumers in a seemingly indirect fashion. In - film advertising is a marketing practice designed to intentionally insert products into the content of Bollywood movies. In most cases the placement is subtle so as not to divert significant attention from the main content of the movie. This can be an inexpensive way to build national recognition for a company, product or service; this can be an asset in enhancing the corporate image as well as provide several different promotional opportunities in some of the most successful movies and television programs today. The company wants their products to be visible within a scene, but not the focus. The product needs to fit, almost seam- lessly into the shot and context of the scene. When done correctly, product placement can add a sense of realism to a movie or television or other forms of media.

Single crystal InP samples were irradiated with 100 MeV Fe9+ ions for ion fluences 1x1012 and 1x1013 cm−2. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease in the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.

The impact of saline water inundation on freshwater aquaculture was evaluated through risk assessment tools. Fishponds in low-lying areas of Sagar and Basanti block are prone to saline water flooding. Respondents of Sagar block considered events like cyclone and coastal flooding as extreme risk; erratic monsoon, storm surge and land erosion as high risk; temperature rise, sea level rise, hot & extended summer and precipitation as medium risk. Likewise, in Basanti block the respondents rated cyclone as extreme risk; erratic monsoon, storm surge as high risk; temperature rise, hot & extended summer, land erosion, and precipitation as medium risk; coastal flooding and sea level rise as low risk. Fish farmers of Sagar block classified the consequences of saline water flooding like breach of pond embankment and mass mortality of fishes as extreme risk; escape of existing fish stock and diseases as high risk; entry of unwanted species, retardation of growth and deterioration of water quality as medium risk; and damage of pond environment as low risk. Farmers of Basanti block categorised breach of pond dyke, mass mortality of fishes and entry of unwanted species as extreme risk; escape of fish and diseases as high risk; retardation of growth as medium risk; deterioration of water quality and damage of pond environment as low risk. To reduce the threats against saline water ingression, farmers are taking some coping measures like increase in pond dyke height; repair and strengthening of dyke; plantation on dyke; dewatering and addition of fresh water; application of chemicals/ lime/ dung; addition of tree branches in pond for hide outs etc.

In the present work, a novel approach for the synthesis of nanocontainers by encapsulation has been presented, which are capable of responsive release of corrosion inhibitors (benzotriazole). Nanocontainers have been prepared using layer-by-layer (LbL) assembly of oppositely charged species of polyelectrolytes and inhibitor on the surface of ZnO. Synthesis of nanostructured zinc oxide was carried out initially using the sonochemical precipitation approach. The thickness of the layer, surface charge and functional groups present on each layer were identified using particle size distribution (PSD), zeta potential and FTIR analysis, respectively. The average initial size of the core ZnO was in nanosize range as observed in the TEM image. XRD analysis shows that ZnO contains wurtzite as a major phase. The release properties of polyelectrolyte modified ZnO nanocontainer have been investigated and the observed release rate characteristics show that these nanocontainers would be useful in the multifunctional coating formulations. Responsive release of inhibitor was quantitatively evaluated in water at different pH. Performance of nanocontainers was studied in corrosive environment by incorporating the nanocontainers in alkyd resin. Results of UV-spectroscopy at different pH, corrosion rate analysis and TAFEL plots of nanocontainers coatings on mild steel (MS) panel have been presented. It has been found that electrochemical current density decreased from 0.00355 to 0.0008 A/cm 2 , when neat alkyd resin combined with 5% nanocontainers has been used in the coating. Corrosion results from Tafel plot and corrosion rate analysis shows that the 5 wt% loading of nanocontainers is useful and optimum for the sustained release of inhibitor for the applications in the marine coatings irrespective of the operating pH.

Silicon oxide (SiO2)-buried insulating layers were synthesized by separation by an implanted oxygen process using 140 keV (16O+) implantation into ⟨ 111⟩ single-crystal silicon at room temperature at low fluence levels ranging from 1.0×1016 to 7.0×1016 cm−2. The buried silicon oxide layers have been characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques before and after annealing at 1200 °C for 30 min in argon ambient. The FTIR spectra after annealing of the samples revealed an absorption band associated with one bending vibration in addition to the asymmetric stretching vibration of Si‒O bonds. The XRD spectra of as-implanted samples showed a decrease in the peak (111) intensity with an increase in the ion fluence. The peak intensity was found to increase for all the implanted samples on annealing. The XRD studies revealed the formation of silicon oxide (SiO2) at all ion fluences. The AFM image of the crystalline silicon showe...

Gallium phosphide samples have been irradiated with 100 MeV 56Fe9+ ions for various ion fluences varying from 1×1011 to 1×1014 cm−2 at room temperature. Irradiated samples were characterized by Ram...

Gallium phosphide ( GaP ) samples were irradiated with swift (100 MeV)56 Fe 9+ ions for various ion fluences varying from 1 × 1011 to 1 × 1014 cm -2. Atomic force microscopy, Raman scattering, and X-ray diffraction techniques have been used to investigate the irradiation effect. Atomic force microscopy studies showed the presence of nanosized hills separated with valleys at the surface of irradiated gallium phosphide. The average diameters of hills were found to be 19.76, 19.81, 20.70, and 22.64 nm for ion fluences 5 × 1012, 1 × 1013, 5 × 1013, and 1 × 1014 cm -2, respectively. Root mean square surface roughness analysis has been used to characterize the nature of the surface under swift heavy ion irradiation. The features observed in the Raman spectra at 402.18 cm-1 and 365.05 cm-1 were assigned to the characteristic first-order longitudinal optical (LO) phonon mode and transverse optical (TO) phonon mode of gallium phosphide, respectively. We have also observed the second-order overtones and combinations of optical modes giving rise to three characteristic peaks in the region between 700 and 800 cm-1. X-ray diffraction technique has been used to determine the crystallite size. The crystallite size was found to decrease with increase in ion fluence.

P-type silicon samples were irradiated with 56Fe7+ ions for different ion fluences varying from 1 × 1013 to 5 × 1014 cm− 2 at 100 MeV. Atomic force microscopy study showed the group of nanoclusters on the surface of silicon. The size, shape and diameter of the nanoclusters are found to be strongly influenced by ion fluence. Three dimensional atomic force microscopy images of the samples irradiated with different ion fluences showed hillocks surrounded with valleys. Grazing angle X-ray diffraction study revealed the formation of different phases of FeSi2 depending on ion fluences. The interference fringes observed in the Fourier transform infrared studies revealed the presence of FeSi2 layer with a thickness comparable to ion range. The decay of the fringe amplitudes with wave number indicates non constant dielectric constants.

High purity (99.9%), 0.25 mm thick, tantalum samples were implanted with oxygen reactive ions ( 16 O + ) at 100 keV energy at fluence levels ranging from 1 × 10 16 to 5 × 10 17 ions-cm -2 to synthesize tantalum oxide layers. The structure of the ion beam synthesized layers was analyzed by FTIR spectroscopy studies. The electrical characteristics were investigated on Al/ Tantalum oxide/Ta (MIM) structures by current-voltage (I-V) and capacitance/dielectric loss-frequency measurements. The FTIR studies show the formation of amorphous tantalum oxide layers of complex structures- tantalum pentaoxide (Ta 2 O 5 ) and suboxides of tantalum depending on the implantation and post annealing conditions. The I-V studies show ohmic conduction for low voltages and space charge limited conduction (SCLC) at high voltages. The leakage current density of the samples was found to depend on the processing conditions. The electrical resistivity of the tantalum after oxygen implantation is found to increase with ion fluence. The capacitance of the MIM devices fabricated with ion beam synthesized tantalum oxide layers show small variation with frequency. In general, an enhancement in the capacitance and reduction in the dielectric loss were observed upon annealing on samples synthesized with low fluence level indicating gradual transformation into good dielectric layer. .

Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (≥ 1 × 10 17 ions-cm − 2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR and XRD measurements and the surface modification by using atomic force microscopy (AFM). The FTIR measurements on the implanted samples (≤ 1 × 10 18 ion-cm − 2 ) show a single absorption band in the wavenumber range 1300–750 cm − 1 attributed to the formation of silicon oxynitride bonds in silicon. The integrated absorption band intensity is found to increase with increase in the fluence. The samples with nitrogen–oxygen sequence of implantation showed nitrogen-rich oxynitride formation whereas samples with oxygen–nitrogen sequence resulted in oxygen-rich oxynitride. The formation of separate phases of Si–O and Si–N bonds was observed at high fluence level (≅ 2 × 10 18 ions-cm − 2 ). The XRD studies show the formation of mixed phases of Si 2 N 2 O and SiO 2 in the sample. The structures of the ion beam synthesized silicon oxynitride layers are found to be strongly dependent on the sequence of implantation. The surface roughness is observed to be very small at lower fluences and it increases as we go to high fluence levels due to heavy damage caused by implantation. The conical hill like structures on the silicon surface is seen due to heavy surface swelling and sputtering phenomena.

Indium phosphide samples were irradiated with swift (100 MeV) 56Fe7+ ions with different fluences varying from 5 × 1012 to 2 × 1014 ions cm− 2 at room temperature. Atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques have been used to investigate the irradiation effects. Atomic force microscopy observations revealed the presence of hillocks surrounded with valleys in all irradiated samples. The shape, size and height of the hillocks were found to vary with respect to ion fluences. Root mean square surface roughness was found to change from 0.33 nm to 7.49 nm. X-ray diffraction studies revealed increase in the amount of disorder in the irradiated samples as ion fluence increases.

In this study, 95% ethanolic extract of Thuja occidentalis Linn ( TOE ) was evaluated for its anti-ulcer potential by using hard liquor (42.8 % v/v ethanol, 1 ml/150 g body weight) and aspirin (200 mg/kg) induced gastric ulcer models on rats, where oral administration of 200 and 400 mg/kg of TOE showed significant (***pTOE was also evaluated for its in-vitro free-radical scavenging activity and anti-inflammatory activity. The studies showed significant (***pTOE , when compare to control, whereas TOE failed to exhibits any significant (ns p>0.05) anti-inflammatory activity on Carrageenan - induced paw oedema and Cotton pellet granuloma models. Since the extract fail to show significant anti-inflammatory activity, the inhibitory role on prostaglandin synthesis and over production of leukotriene may be ruled out, so we can suggest that gastro-protective activity against aspirin induced ulcer by inhibiting the back diffusion of H + ions. However, further studies are needed to confirm this hypothesis. On the basis of these investigations, we may partially conclude that ulcer-protection may be due to free radical scavenging activity of TOE and TOE could be a potent antiulcer agent for next generation.

Single crystal gallium antimonide substrate was implanted with 200 keV iron ions with different ion fluences varying from 1 × 10 14 to 1 × 10 16 cm − 2 . Optical and structural properties have been investigated using the micro-Raman, Fourier transform infrared and grazing-angle X-ray diffraction measurements. Raman studies have shown the amorphization of gallium antimonide at higher fluences. Fourier transform infrared transmission studies over photon energy range 0.3 to 0.7 eV showed the change in the value of optical density over the entire photon energy range for the implanted samples as compared with the non-implanted sample. Damage profile probed by etching the sample was found to be non-uniformly distributed in the implanted sample. Grazing-angle X-ray diffraction spectra recorded at 1, 5 and 10° suggests the presence of defects and disorder in gallium antimonide after implantation.