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The characteristics of several laser-based optoelectronic devices are studied. Experiments are performed wherein the typical current-voltage properties of a double heterostructure optoelectronic switch (DOES) and a heterostructure field-effect transistor (HFET) are determined at various hoding voltage levels. Results indicate that the DOES and HFET devices are very useful for the design of smart pixels used in optical data processing.

A new technology to advance optoelectronic integration is presented. It involves a class of optoelectronic devices with an inversion channel heterostructure containing one quantum-well active region. The inversion channel's geometry is such that it may be altered for the designing afield effect transistor, a current injection laser, a field effect modulator ora waveguide photodetector. A discussion on epitaxial growth and fabrication fordevice implementation is also provided.