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100 results on '"Schleicher, F."'

1. Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains

Author

Katcko, K., Urbain, E., Kandpal, L., Chowrira, B., Schleicher, F., Halisdemir, U., Ngassamnyakam, F., Mertz, D., Leconte, B., Beyer, N., Spor, D., Panissod, P., Boulard, A., Arabski, J., Kieber, C., Sternitsky, E., Da Costa, V., Alouani, M., Hehn, M., Montaigne, F., Bahouka, A., Weber, W., Beaurepaire, E., Lacour, D., Boukari, S., and Bowen, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Applied Physics, Quantum Physics
Abstract

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the device's effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface'. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.

Published
2019
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3. Spin-driven electrical power generation at room temperature

Author

Katcko, K., Urbain, E., Taudul, B., Schleicher, F., Arabski, J., Beaurepaire, E., Vileno, B., Spor, D., Weber, W., Lacour, D., Boukari, S., Hehn, M., Alouani, M., Fransson, J., and Bowen, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The magnetic state of matter, assembled by ordering the electron's quantum spin property, represents a sizeable source of built-in energy. We propose to create a direct source of electrical power at room temperature (RT) by utilizing magnetic energy to harvest thermal fluctuations on paramagnetic (PM) centers. Our spin engine rectifies current fluctuations across the PM centers' spin states according to the electron spin by utilizing so-called 'spinterfaces' with high spin polarization. As a rare experimental event, we demonstrate how this path can generate 0.1nW at room temperature across a 20 micron-wide spintronic device called the magnetic tunnel junction, assembled using commonplace Co, C and MgO materials. The presence of this path in our experiment, which also generates very high spintronic performance, is confirmed by analytical and ab-initio calculations. Device downscaling, and the ability for other materials systems than the spinterface to select a transport spin channel at RT widens opportunities for routine device reproduction. The challenging control over PM centers within the tunnel barrier's nanotransport path may be addressed using oxide- and organic-based nanojunctions. At present densities in MRAM products, this spin engine could lead to 'always-on' areal power densities well beyond that generated by solar irradiation on earth. Further developing this concept can fundamentally alter our energy-driven society's global economic, social and geopolitical constructs.

Published
2018
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4. Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies

Author

Schleicher, F., Taudul, B., Halisdemir, U., Katcko, K., Monteblanco, E., Lacour, D., Boukari, S., Montaigne, F., Urbain, E., Kandpal, L. M., Arabski, J., Weber, W., Beaurepaire, E., Hehn, M., Alouani, M., and Bowen, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars., Comment: 8 pages including 2 figures

Published
2017

5. Backside Power Delivery With Relaxed Overlay for Backside Patterning Using Extreme Wafer Thinning and Molybdenum-Filled Slit Nano Through Silicon Vias

Author

Zhao, P., Witters, L., Jourdain, A., Stucchi, M., Jourdan, N., Maes, J. W., Bana, H., Zhu, C., Chukka, R., Sebaai, F., Vandersmissen, K., Heylen, N., Montero, D., Wang, S., D'Have, K., Schleicher, F., Vos, J. De, Beyer, G., Miller, A., and Beyne, E.

Abstract

Backside power delivery network (BSPDN) has gained much attention due to its potential to independently optimize signal and power routing. In this work, long slit nano through silicon vias (nTSVs) is used for high-density connections between frontside (FS)-patterned buried power rails (BPRs) and orthogonally patterned metal rails on the wafer backside (BS). These nTSVs are in situ patterned on top of BPR with self-alignment using FS lithography, and the length of the slits can also be tuned. This design relaxes overlay requirements for BS patterning that are typically stringent due to wafer grid distortions during bonding. Additionally, extreme wafer thinning stopping on a 10 nm Si0.75Ge0.25 etch stop layer (ESL) is enabled using an optimized thinning sequence with excellent total thickness variation (TTV) control. For the first time, low resistance barrier-free Molybdenum (Mo)-filled nTSVs are demonstrated, confirming the potential for further scaling compared to TiN/W-filled counterparts.

Published
2024
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6. Control of defect-mediated tunneling barrier heights in ultrathin MgO films

Author

Kim, D. J., Choi, W. S., Schleicher, F., Shin, R. H., Boukari, S., Davesne, V., Kieber, C., Arabski, J., Schmerber, G., Beaurepaire, E., Jo, W., and Bowen, M.

Subjects
Condensed Matter - Materials Science
Abstract

The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers., Comment: 4 pages, 4 figures

Published
2010
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9. Multimessenger Characterization of Markarian 501 during Historically Low X-Ray and $γ$-Ray Activity

Author

Abe, Abe, H., Acciari, S., Agudo, V. A., Aniello, I., Ansoldi, T., Antonelli, S., Arbet-Engels, L. A., Arcaro, A., Artero, C., Asano, M., Baack, K., Babić, D., Baquero, A., de Almeida, A., Barres, Barrio, U., Batković, J. A., Baxter, I., Becerra González, J., Bednarek, J., Bernardini, W., Bernardos, E., Berti, M., Besenrieder, A., Bhattacharyya, J., Bigongiari, W., Biland, C., Blanch, A., Bonnoli, O., Bošnjak, G., Burelli, Ž., Busetto, I., Carosi, G., Carretero-Castrillo, R., Castro-Tirado, M., Ceribella, A. J., Chai, G., Chilingarian, Y., Cikota, A., Colombo, S., Contreras, E., Cortina, J. L., Covino, J., D’Amico, S., D’Elia, G., Da Vela, V., Dazzi, P., De Angelis, F., De Lotto, A., Del Popolo, B., Delfino, A., Delgado, M., Delgado Mendez, J., Depaoli, C., Di Pierro, D., Di Venere, F., Souto Espiñeira, L., Dominis Prester, E., Donini, D., Dorner, A., Doro, D., Elsaesser, M., Emery, D., Escudero, G., Fallah Ramazani, J., Fariña, V., Fattorini, L., Foffano, A., Font, L., Fruck, L., Fukami, C., Fukazawa, S., García López, Y., Garczarczyk, R. J., Gasparyan, M., Gaug, S., Giesbrecht Paiva, M., Giglietto, J. G., Giordano, N., Gliwny, F., Godinović, P., Grau, N., Green, R., Green, D., Hadasch, J. G., Hahn, D., Hassan, A., Heckmann, T., Herrera, L., Hrupec, J., Hütten, D., Imazawa, M., Inada, R., Iotov, T., Ishio, R., Jiménez Martínez, K., Jormanainen, I., Kerszberg, J., Kobayashi, D., Kubo, Y., Kushida, H., Lamastra, J., Lelas, A., Leone, D., Lindfors, F., Linhoff, E., Lombardi, L., Longo, S., López-Coto, F., López-Moya, R., López-Oramas, M., Loporchio, A., Lorini, S., Lyard, A., Machado de Oliveira Fraga, E., Majumdar, B., Makariev, P., Maneva, M., Mang, G., Manganaro, N., Mangano, M., Mannheim, S., Mariotti, K., Martínez, M., Mas-Aguilar, M., Mazin, A., Menchiari, D., Mender, S., Mićanović, S., Miceli, S., Miener, D., Miranda, T., Mirzoyan, J. M., Molina, R., Mondal, E., Moralejo, H. A., Morcuende, A., Moreno, D., Nakamori, V., Nanci, T., Nava, C., Neustroev, L., Nievas Rosillo, V., Nigro, M., Nilsson, C., Nishijima, K., Njoh Ekoume, K., Noda, T., Nozaki, K., Ohtani, S., Oka, Y., Okumura, T., Otero-Santos, A., Paiano, J., Palatiello, S., Paneque, M., Paoletti, D., Paredes, R., Pavletić, J. M., Persic, L., Pihet, M., Pirola, M., Podobnik, G., Moroni, F., Prada, Prandini, P. G., Principe, E., Priyadarshi, G., Rhode, C., Ribó, W., Rico, M., Righi, J., Rugliancich, C., Sahakyan, A., Saito, N., Sakurai, T., Satalecka, S., Saturni, K., Schleicher, F. G., Schmidt, B., Schmuckermaier, K., Schubert, F., Schweizer, J. L., Sitarek, T., Sliusar, J., Sobczynska, V., Spolon, D., Stamerra, A., Strišković, A., Strom, J., Strzys, D., Suda, M., Surić, Y., Tajima, T., Takahashi, H., Takeishi, M., Tavecchio, R., Temnikov, F., Terauchi, P., Terzić, K., Teshima, T., Tosti, M., Truzzi, L., Tutone, S., Ubach, A., van Scherpenberg, S., Acosta, J., Vazquez, Ventura, M., Verguilov, S., Viale, V., Vigorito, I., Vitale, C. F., Vovk, V., Walter, I., Will, R., Wunderlich, M., Yamamoto, C., Zarić, T., Cerruti, D., Acosta-Pulido, M., Apolonio, J. A., Bachev, G., Baloković, R., Benítez, M., Björklund, E., Bozhilov, I., Brown, V., Bugg, L. F., Carbonell, A., Carnerero, W., Carosati, M. I., Casadio, D., Chamani, C., Chen, W., Chigladze, W. P., Damljanovic, R. A., Epps, G., Erkenov, K., Feige, A., Finke, M., Fuentes, J., Gazeas, A., Giroletti, K., Grishina, M., Gupta, T. S., Heidemann, A. C., Gurwell, M. A., Hiriart, E., Hou, D., Hovatta, W. J., Ibryamov, T., Joner, S., Jorstad, M. D., Kania, S. G., Kiehlmann, J., Kimeridze, S., Kopatskaya, G. N., Kopp, E. N., Korte, M., Kotas, M., Koyama, B., Kramer, S., Kunkel, J. A., Kurtanidze, L., Kurtanidze, S. O., Lähteenmäki, O. M., López, A., Larionov, J. M., Larionova, V. M., Larionova, E. G., Leto, L. V., Lorey, C., Mújica, C., Madejski, R., Marchili, G. M., Marscher, N., Minev, A. P., Modaressi, M., Morozova, A., Mufakharov, D. A., Myserlis, T., Nikiforova, I., Nikolashvili, A. A., Ovcharov, M. G., Perri, E., Raiteri, M., Readhead, C. M., Reimer, A. C. S., Reinhart, A., Righini, D., Rosenlehner, S., Sadun, K., Savchenko, A. C., Scherbantin, S. S., Schneider, A., Schoch, L., Seifert, K., Semkov, D., Sigua, E., Singh, L. A., Sola, C., Sotnikova, P., Spencer, Y., Steineke, M., Stojanovic, R., Strigachev, M., Tornikoski, A., Traianou, M., Tramacere, E., Troitskaya, A., Troitskiy, Yu. V., Trump, I. S., Tsai, J. B., Valcheva, A., Vasilyev, A., Verrecchia, A. A., Villata, F., Vince, M., Vrontaki, O., Weaver, K., Zaharieva, Z. R., and Zottmann, E.

Subjects
ddc:520
Abstract

The astrophysical journal / Supplement series 266(2), 37 (2023). doi:10.3847/1538-4365/acc181, We study the broadband emission of Mrk 501 using multiwavelength observations from 2017 to 2020 performed with a multitude of instruments, involving, among others, MAGIC, Fermi's Large Area Telescope (LAT), NuSTAR, Swift, GASP-WEBT, and the Owens Valley Radio Observatory. Mrk 501 showed an extremely low broadband activity, which may help to unravel its baseline emission. Nonetheless, significant flux variations are detected at all wave bands, with the highest occurring at X-rays and very-high-energy (VHE) $γ$-rays. A significant correlation (>3σ) between X-rays and VHE $γ$-rays is measured, supporting leptonic scenarios to explain the variable parts of the emission, also during low activity. This is further supported when we extend our data from 2008 to 2020, and identify, for the first time, significant correlations between the Swift X-Ray Telescope and Fermi-LAT. We additionally find correlations between high-energy γ-rays and radio, with the radio lagging by more than 100 days, placing the γ-ray emission zone upstream of the radio-bright regions in the jet. Furthermore, Mrk 501 showed a historically low activity in X-rays and VHE $γ$-rays from mid-2017 to mid-2019 with a stable VHE flux (>0.2 TeV) of 5% the emission of the Crab Nebula. The broadband spectral energy distribution (SED) of this 2 $γ$r long low state, the potential baseline emission of Mrk 501, can be characterized with one-zone leptonic models, and with (lepto)-hadronic models fulfilling neutrino flux constraints from IceCube. We explore the time evolution of the SED toward the low state, revealing that the stable baseline emission may be ascribed to a standing shock, and the variable emission to an additional expanding or traveling shock., Published by Institute of Physics Publ., London

Published
2023
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10. Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network

Author

Chen, R., primary, Lofrano, M., additional, Mirabelli, G., additional, Sisto, G., additional, Yang, S., additional, Jourdain, A., additional, Schleicher, F., additional, Veloso, A., additional, Zografos, O., additional, Weckx, P., additional, Hiblot, G., additional, Plas, G. Van der, additional, Hellings, G., additional, Ryckaert, J., additional, and Beyne, E., additional

Published
2022
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11. Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

Author

Veloso, A., primary, Jourdain, A., additional, Radisic, D., additional, Chen, R., additional, Arutchelvan, G., additional, O'Sullivan, B., additional, Arimura, H., additional, Stucchi, M., additional, De Keersgieter, A., additional, Hosseini, M., additional, Hopf, T., additional, D'have, K., additional, Wang, S., additional, Dupuy, E., additional, Mannaert, G., additional, Vandersmissen, K., additional, Iacovo, S., additional, Marien, P., additional, Choudhury, S., additional, Schleicher, F., additional, Sebaai, F., additional, Oniki, Y., additional, Zhou, X., additional, Gupta, A., additional, Schram, T., additional, Briggs, B., additional, Lorant, C., additional, Rosseel, E., additional, Hikavyy, A., additional, Loo, R., additional, Geypen, J., additional, Batuk, D., additional, Martinez, G. T., additional, Soulie, J. P., additional, Devriendt, K., additional, Chan, B. T., additional, Demuynck, S., additional, Hiblot, G., additional, Van der Plas, G., additional, Ryckaert, J., additional, Beyer, G., additional, Litta, E. Dentoni, additional, Beyne, E., additional, and Horiguchi, N., additional

Published
2022
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16. Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains

Author

Katcko, K., Urbain, E., Kandpal, L., Chowrira, B., Schleicher, F., Halisdemir, U., Ngassamnyakam, F., Mertz, D., Leconte, B., Beyer, N., Spor, D., Panissod, P., Boulard, A., Arabski, J., Kieber, C., Sternitsky, E., Da Costa, V., Alouani, M., Hehn, M., Montaigne, F., Bahouka, A., Weber, W., Beaurepaire, E., Lacour, D., Boukari, S., Bowen, M., Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), IREPA LASER (IREPA LASER), Lacour, Daniel, Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Condensed Matter - Materials Science, Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Applied Physics (physics.app-ph), Physics - Applied Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, [PHYS] Physics [physics], Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Quantum Physics (quant-ph), [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]
Abstract

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes 1-7 and lateral junctions 8-13. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics 14 to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces 15-17. The challenge here is to ascertain the device's effective, buried nanotransport path 18 , and to electrically involve these nano-objects in this path by shrinking the device area from the macro-17,19-22 to the nano-scale 23-25 while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist-and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer 26,27. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy 28. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy 2,3 , magnetic exchange bias 29,30 and magnetotransport 24,25 due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface' 16. This provides a first insight into the experimental energetics of this promising low-power information encoding unit 31.

Published
2020

17. Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond

Author

Gupta, A., primary, Pedreira, O. Varela, additional, Tao, Z., additional, Mertens, H., additional, Radisic, D., additional, Jourdan, N., additional, Devriendt, K., additional, Heylen, N., additional, Wang, S., additional, Chehab, B., additional, Jang, D., additional, Hellings, G., additional, Sebaai, F., additional, Lorant, C., additional, Teugels, L., additional, Peter, A., additional, Chan, BT, additional, Schleicher, F., additional, Demonie, I., additional, Marien, P., additional, Sepulveda, A., additional, Richard, O., additional, Nagesh, N., additional, Lesniewska, A., additional, Lazzarino, F., additional, Ryckaert, J., additional, Morin, P., additional, Altamirano-Sanchez, E., additional, Murdoch, G., additional, Bommels, J., additional, Demuynck, S., additional, Na, M. H, additional, Tokei, Z., additional, Biesemans, S., additional, Litta, E. Dentoni, additional, and Horiguchi, N., additional

Published
2020
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18. Supervia Process Integration and Reliability Compared to Stacked Vias Using Barrierless Ruthenium

Author

Vega-Gonzalez, V., primary, Puliyalil, H., additional, Versluijs, J., additional, Lesniewska, A., additional, Varela-Pereira, O., additional, Baert, R., additional, Paolillo, S., additional, Decoster, S., additional, Schleicher, F., additional, Montero, D., additional, Bekaert, J., additional, Kesters, E., additional, Le, Q. T., additional, Lorant, C., additional, Teugels, L., additional, Heylen, N., additional, Jourdan, N., additional, El-Mekki, Z., additional, van der Veen, M., additional, Ciofi, I., additional, Briggs, B., additional, Heijlen, J., additional, Dupas, L., additional, De-Wachter, B., additional, Vancoille, E., additional, Webers, T., additional, Vats, H., additional, Rynders, L., additional, Cupak, M., additional, Uk-Lee, J., additional, Drissi, Y., additional, Halipre, L., additional, Charley, A.-L., additional, Verdonck, P., additional, Witters, T., additional, Gompel, S. V., additional, Kimura, Y., additional, Demonie, I., additional, Lazzarino, F., additional, Ercken, M, additional, Kim, R., additional, Trivkovic, D., additional, Croes, K., additional, Leray, P., additional, Jaysankar, M., additional, Wilson., C., additional, Muroch, G., additional, and Tokei, Z., additional

Published
2020
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19. Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node

Author

Gupta, A., primary, Mertens, H., additional, Tao, Z., additional, Demuynck, S., additional, Bommels, J., additional, Arutchelvan, G., additional, Devriendt, K., additional, Pedreira, O. Varela, additional, Ritzenthaler, R., additional, Wang, S., additional, Radisic, D., additional, Kenis, K., additional, Teugels, L., additional, Sebaai, F., additional, Lorant, C., additional, Jourdan, N., additional, Chan, B. T., additional, Zahedmanesh, H., additional, Subramanian, S., additional, Schleicher, F., additional, Hopf, T., additional, Peter, A., additional, Rassoul, N., additional, Debruyn, H., additional, Demonie, I., additional, Siew, Y., additional, Chiarella, T., additional, Briggs, B., additional, Zhou, D., additional, Rosseel, E., additional, De Keersgieter, A., additional, Capogreco, E., additional, Litta, E. Dentoni, additional, Boccardi, G., additional, Baudot, S., additional, Mannaert, G., additional, Bontemps, N., additional, Sepulveda, A., additional, Mertens, S., additional, Kim, M. S., additional, Dupuy, E., additional, Vandersmissen, K., additional, Paolillo, S., additional, Yakimets, D., additional, Chehab, B., additional, Favia, P., additional, Drijbooms, C., additional, Cousserier, J., additional, Jaysankar, M., additional, Lazzarino, F., additional, Morin, P., additional, Sanchez, E., additional, Mitard, J., additional, Wilson, C., additional, Holsteyns, F., additional, Tokei, Z., additional, and Horiguchi, N., additional

Published
2020
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20. Buried power rail integration for CMOS scaling beyond the 3 nm node

Author

Bannister, Julie, Mohanty, Nihar, Gupta, A., Tao, Z., Radisic, D., Mertens, H., Pedreira, O. Varela, Demuynck, S., Bömmels, J., Devriendt, K., Heylen, N., Wang, S., Kenis, K., Teugels, L., Sebaai, F., Lorant, C., Jourdan, N., Chan, B. T., Subramanian, S., Schleicher, F., Peter, A., Rassoul, N., Siew, Y., Briggs, B., Zhou, D., Rosseel, E., Capogreco, E., Mannaert, G., Sepúlveda, A., Dupuy, E., Vandersmissen, K., Chehab, B., Murdoch, G., Altamirano Sanchez, E., Biesemans, S., Tőkei, Zs., Litta, E. Dentoni, and Horiguchi, N.

Published
2022
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21. Consolidated picture of tunnelling spintronics across oxygen vacancy states in MgO

Author

Schleicher, F, primary, Taudul, B, additional, Halisdemir, U, additional, Katcko, K, additional, Monteblanco, E, additional, Lacour, D, additional, Boukari, S, additional, Montaigne, F, additional, Urbain, E, additional, Kandpal, L M, additional, Arabski, J, additional, Weber, W, additional, Beaurepaire, E, additional, Hehn, M, additional, Alouani, M, additional, and Bowen, M, additional

Published
2019
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22. Über die Beulung von Rechteckplatten mit anfänglicher Ausbiegung

Author

Schleicher, F., Klöppel, K., editor, Blick, W., Chwalla, E., Dischinger, F., Domke, O., Grammel, R., Hencky, H., Moheit, W., Hoffmann, R., Lorenz, H., Mann, L., Olsson, R. Gran, Petermann, H., Pirlet, J., Pohl, K., Pucher, A., Rudakow, A., Schleicher, F., Schleusner, A., Tölke, F., Wegner, U., and Worch, G.

Published
1943
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24. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

Author

Felix, Nelson M., Lio, Anna, De Simone, D., Kljucar, L., Das, P., Blanc, R., Beral, C., Severi, J., Vandenbroeck, N., Foubert, P., Charley, A., Oak, A., Xu, D., Gillijns, W., Mitard, J., Tokei, Z., van der Veen, M., Heylen, N., Teugels, L., Le, Q. T., Schleicher, F., Leray, P., Ronse, K., Kim, Il Hwan, Kim, Insung, Park, Changmin, Lee, Jisun, Ryu, Koungmin, De Schepper, P., Doise, J., and Kocsis, M.

Published
2021
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25. Oxygen-vacancy driven tunnelling spintronics across MgO

Author

Halisdemir, U., additional, Schleicher, F., additional, Kim, D. J., additional, Taudul, B., additional, Lacour, D., additional, Choi, W. S., additional, Gallart, M., additional, Boukari, S., additional, Schmerber, G., additional, Davesne, V., additional, Panissod, P., additional, Halley, D., additional, Majjad, H., additional, Henry, Y., additional, Leconte, B., additional, Boulard, A., additional, Spor, D., additional, Beyer, N., additional, Kieber, C., additional, Sternitzky, E., additional, Cregut, O., additional, Ziegler, M., additional, Montaigne, F., additional, Arabski, J., additional, Beaurepaire, E., additional, Jo, W., additional, Alouani, M., additional, Gilliot, P., additional, Hehn, M., additional, and Bowen, M., additional

Published
2016
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27. Beiträge zur Baustatik, Elastizitätstheorie, Stabilitätstheorie, Bodenmechanik

Author

Blick, W., primary, Chwalla, E., additional, Dischinger, F., additional, Domke, O., additional, Grammel, R., additional, Hencky, H., additional, Moheit, W., additional, Hoffmann, R., additional, Klöppel, K., additional, Lorenz, H., additional, Mann, L., additional, Olsson, R. Gran, additional, Petermann, H., additional, Pirlet, J., additional, Pohl, K., additional, Pucher, A., additional, Rudakow, A., additional, Schleicher, F., additional, Schleusner, A., additional, Tölke, F., additional, Wegner, U., additional, and Worch, G., additional

Published
1943
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28. Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Author

Schleicher, F., primary, Halisdemir, U., additional, Lacour, D., additional, Gallart, M., additional, Boukari, S., additional, Schmerber, G., additional, Davesne, V., additional, Panissod, P., additional, Halley, D., additional, Majjad, H., additional, Henry, Y., additional, Leconte, B., additional, Boulard, A., additional, Spor, D., additional, Beyer, N., additional, Kieber, C., additional, Sternitzky, E., additional, Cregut, O., additional, Ziegler, M., additional, Montaigne, F., additional, Beaurepaire, E., additional, Gilliot, P., additional, Hehn, M., additional, and Bowen, M., additional

Published
2014
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31. Oxygen-vacancy driven tunnelling spintronics across MgO

Author

Drouhin, Henri-Jean, Wegrowe, Jean-Eric, Razeghi, Manijeh, Halisdemir, U., Schleicher, F., Kim, D. J., Taudul, B., Lacour, D., Choi, W. S., Gallart, M., Boukari, S., Schmerber, G., Davesne, V., Panissod, P., Halley, D., Majjad, H., Henry, Y., Leconte, B., Boulard, A., Spor, D., Beyer, N., Kieber, C., Sternitzky, E., Cregut, O., Ziegler, M., Montaigne, F., Arabski, J., Beaurepaire, E., Jo, W., Alouani, M., Gilliot, P., Hehn, M., and Bowen, M.

Published
2016
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44. Beitrag zur Berechnung der allseitig eingespannten Rechteckplatte

Author

Worch, G., Klöppel, K., editor, Blick, W., Chwalla, E., Dischinger, F., Domke, O., Grammel, R., Hencky, H., Moheit, W., Hoffmann, R., Lorenz, H., Mann, L., Olsson, R. Gran, Petermann, H., Pirlet, J., Pohl, K., Pucher, A., Rudakow, A., Schleicher, F., Schleusner, A., Tölke, F., Wegner, U., and Worch, G.

Published
1943
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47. Beitrag zur Berechnung der Tragwerke mittels der Formänderungsmethode

Author

Dischinger, F., Klöppel, K., editor, Blick, W., Chwalla, E., Dischinger, F., Domke, O., Grammel, R., Hencky, H., Moheit, W., Hoffmann, R., Lorenz, H., Mann, L., Olsson, R. Gran, Petermann, H., Pirlet, J., Pohl, K., Pucher, A., Rudakow, A., Schleicher, F., Schleusner, A., Tölke, F., Wegner, U., and Worch, G.

Published
1943
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48. Der Rammschlag

Author

Hoffmann, R., Klöppel, K., editor, Blick, W., Chwalla, E., Dischinger, F., Domke, O., Grammel, R., Hencky, H., Moheit, W., Hoffmann, R., Lorenz, H., Mann, L., Olsson, R. Gran, Petermann, H., Pirlet, J., Pohl, K., Pucher, A., Rudakow, A., Schleicher, F., Schleusner, A., Tölke, F., Wegner, U., and Worch, G.

Published
1943
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49. Über die Lösung technischer Eigenwertprobleme

Author

Grammel, R., Klöppel, K., editor, Blick, W., Chwalla, E., Dischinger, F., Domke, O., Grammel, R., Hencky, H., Moheit, W., Hoffmann, R., Lorenz, H., Mann, L., Olsson, R. Gran, Petermann, H., Pirlet, J., Pohl, K., Pucher, A., Rudakow, A., Schleicher, F., Schleusner, A., Tölke, F., Wegner, U., and Worch, G.

Published
1943
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