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The voltammetry of the water-insoluble redox liquids para-N,N,N' ,N'-tetraalkylphenylenediamines at the TAPD/electrode/electrolyte interface is studied. The electrochemically facilitated ion-transfer processes across the interface between aqueous solutions containing different anion species and organic phases are described.

Electrochemical processes in thin film and droplet deposits of THPD and TriHPD have been investigated as a function of the proton concentration in the aqueous electrolyte. Voltammetric and in-situ spectroelectrochemical experiments have been shown that both neutral and ionic redox liquids undergo redox conversion accompanied by ion insertion or expulsion.

The capacitance behavior of metal insulator metal (MIM) structures with [Zr.sub.1-x][Al.sub.x][O.sub.2] dielectrics and TiN metal electrodes is studied. The reactions between the oxidizing ambient and the bottom electrode during high-k deposition has resulted in structural changes and thus in generation of defects that cause a different electrical behavior of the two TiN/[Zr.sub.1-x][Al.sub.x][O.sub.2] interfaces at the top and the bottom electrode and a polarity asymmetry of the capacitance performance.

The electrochemistry of microdroplets, shown to be nearly monodisperse, of N, N, NENE-tetraalkyl-para-phenylenediamine oils immobilized on a basal plane pyrolytic graphite electrode and immersed into aqueous electrolyte solution is studied using voltammetry. The aim of this study is to probe the mechanisms responsible for the voltammetry of electroactive oils immobilized in the form of microdroplets on a rough electrode surface.

Voltammetry, electrochemical quartz crystal microbalance and microscopic diffuse reluctance spectroelectrochemical measurements were used to study the electrochemical behavior of solid metal octacyanomolybdates, octacyanotungstates, and hexacyanoferrates. The results indicates that the interplay of solubility equilibria and electrochemical equilibria is generally observed for the other metal octacyanomolybdates, octacyanotungstates, and hexacyanoferrates as well.

Ferroelectric Si:HfO2 has been investigated starting from metal–ferroelectric–metal (MFM) capacitors over metal–ferroelectric–insulator–semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics and field cycling effects recognized for the material itself are shown to also translate to highly scaled 30-nm FeFET devices. Positive-up negative-down as well as pulsed Id{-}Vg measurements illustrate how ferroelectric material characteristics of MFM capacitors can also be identified in more complex MFIS and FeFET structures. Antiferroelectric-like characteristics observed for relatively high Si dopant concentration reveal significant trapping superimposed onto the ferroelectric memory window limiting the general program/erase endurance of the devices to 10^4 cycles. In addition, worst case disturb scenarios for a VDD/2 and VDD/3 scheme are evaluated to prove the viability of one-transistor memory cell concepts. The ability to tailor the ferroelectric properties by appropriate dopant concentration reveals disturb resilience up to 10^6 disturb cycles while maintaining an ION to IOFF ratio of more than four orders of magnitude. [ABSTRACT FROM PUBLISHER]

Presents an electrochemical study of the behavior of chromium(II) hexacyanochromate(III) and the solid iron(II) hexacyanochromate(III) mechanically immobilized on the surface of a graphite electrode. Electrode preparation for measurements; Anodic and cathodic peak potentials; Cyclic voltammetry.

We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin \Si:\HfO2. The program and erase operation of this metal–ferroelectric–insulator–silicon FET (MFIS) with \poly-Si/TiN/Si:\HfO2\/SiO2\/Si gate stack is compared to the transient switching behavior of a TiN-based metal–ferroelectric–metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to \10^6\ \s suggest a retention of more than ten years. [ABSTRACT FROM PUBLISHER]

Reports on the creation of long-lived fuel cells lacking diffusional electron mediators that can convert sugars into electricity. Role of metal-reducing bacterium in providing a constant flow of electrons to graphite electrodes in a fuel cell; Advantages of microbial fuel cell; Comparison between rhodoferax ferrireducens and geobacter or shewanella in terms of glucose-catabolizing efficiency.