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4 results on '"Sebastien Oge"'

1. Investigation of Using SiC MOSFET for High Temperature Applications

Author

Remy Ouaida, Charles Joubert, Pascal Bevilacqua, Sebastien Oge, Pierre Brosselard, and Maxime Berthou

Subjects
010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, 02 engineering and technology, 01 natural sciences, Characterization (materials science), chemistry.chemical_compound, chemistry, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, Power MOSFET, business
Abstract

This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25°C to 250°C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300°C.

Published
2015
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2. Developing innovative power modules for harsh environments: A skilful combination of technological breakthroughs and disruptive power mechatronics processes

Author

Sebastien Oge, Georges Peyresoubes, and Solenne Hameau

Subjects
Design for X, Engineering, business.industry, 020209 energy, 020208 electrical & electronic engineering, 02 engineering and technology, Technical specifications, Mechatronics, Manufacturing engineering, Power (social and political), Power module, 0202 electrical engineering, electronic engineering, information engineering, System level, business
Abstract

The design to cost is a major challenge for the practices of power modules' development especially when faced with very polymorphic demands. The technologies used are not always appropriate in view of the required technical specifications, or can be too expensive, or too basic. Developing a power module consists in making the best technological choices to fit the mission profile of an application; while serving the requirements at system level with a reasonable cost.

Published
2016
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3. Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Author

Charles Joubert, Xavier Perpiñà, Pierre Brosselard, Remy Ouaida, Sebastien Oge, Maxime Berthou, Javier León, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Thalès microélectronique, Centre Nacional de Microelectrònica (CNM), Universitat Autònoma de Barcelona (UAB), and This work was supported in part by Thales Microelectronics, Etrelles, France, in part by the WIDE-Laboratory, and in part by the Spanish Ministry of Economy and Competitiveness through the Research Programs TrenchSiC, Ramón y Cajal, and RUE

Subjects
Materials science, Scanning electron microscope, failure mechanism, 02 engineering and technology, Silicon carbide, 01 natural sciences, Focused ion beam, chemistry.chemical_compound, Gate oxide, oxide degradation, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, Power MOSFET, Leakage (electronics), 010302 applied physics, aging test, power MOSFET, reliability, business.industry, switching, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Aging test, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, business
Abstract

International audience; Under realistic switching conditions, SiC MOSFETs reliability issues remain as a challenge that requires further investigation. In this letter, a specific aging test has been developed to monitor and characterize the electrical parameters of the SiC MOSFET. This allows estimations of the health state and predictions of the remaining lifetime prior to its failure. The gate leakage current seems to be a relevant runaway parameter just before failure. This leakage indicates deterioration of the gate structure. This hypothesis has been validated through analysis of scanning electron microscopy pictures, with a focused ion beam cut showing cracks within the polysilicon.

Published
2014
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4. SiC Vertical JFET Pure Diode-Less Inverter Leg

Author

Sebastien Oge, Fabien Dubois, Florent Morel, Xavier Fonteneau, Dominique Bergogne, Hervé Morel, Remy Ouaida, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Thales Microelectronics, and entreprise

Subjects
Materials science, Silicon Carbide, business.industry, 020208 electrical & electronic engineering, 05 social sciences, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Vertical JFET, JFET, 02 engineering and technology, Thermal conduction, Threshold voltage, chemistry.chemical_compound, Safe operation, chemistry, Diode Less, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Inverter, 0501 psychology and cognitive sciences, Inverter Leg, business, 050107 human factors, Voltage, Diode
Abstract

International audience; The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540 V /5 A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.

Published
2013
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