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7. Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Author

Shen, Zhan Wei, Zhang, Feng, Dimitrijev, Sima, Han, Ji Sheng, Tian, Li Xin, Yan, Guo Guo, Wen, Zheng Xin, Zhao, Wan Shun, Wang, Lei, Liu, Xing Fang, Sun, Guo Sheng, and Zeng, Yi Ping

Abstract

This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al0.2Ga0.8N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×1013 cm-2 was obtained in the Al0.2Ga0.8N/4H-SiC heterostructure, which is comparable to the electron concentration in Al0.2Ga0.8N/GaN heterostructure. The current–voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al0.2Ga0.8N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the AlxGa1-xN/4H-SiC interface exhibits high electron mobility values of 3365 cm2/ (V·s) at 77K and 1120 cm2/ (V·s) at 300K. These results indicate that AlxGa1-xN/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Published
2017
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