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1. Long wavelength infrared photocurrent study of Si-SiGe heterostructures

Author

Liu, H.C., Baribeau, J.M., Buchanan, M., and Simmons,J.G.

Subjects
Epitaxy -- Research, Silicon crystals -- Research, Germanium -- Research, Physics
Abstract

A long-wavelength infrared photocurrent study was used to analyze a series of a Si-SiGe double-heterostructures. The results showed that the active region was a thin heavily p-type doped SiGe layer. In various SiGe compositions, photocurrent spectra featuring different cutoff wavelengths were observed. This was attributed to internal photoemission in theheterojunction.

Published
1992

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