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Smart Wire Connection Technology (SWCT) is an efficient cell interconnection technology that combines many advantages: reduced cell metallization cost, improved module aesthetics, lead-free module…. In addition to the many advantages of this technology, we recently discovered a new opportunity to further boost efficiency of this module technology by overlapping cells. An overlap module is formed by cells overlapped in the string direction. This feature allows to reduce module dimensions and fabrication cost without reducing module power output. An optimal cell overlap of 1mm was determined and large 60 cells bifacial modules were built to compare this concept to regular modules with a cell spacing of few millimetres. Ageing of the module was evaluated and outdoor data presents high performances of overlapped modules in real conditions. So far, a 327Wp bifacial module was build based on this module concept. This module based on 60 heterojunction solar cells measures less than 1.6m2 and has an efficiency of 20.6% with a black back reflector.

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.

We introduce passivating hetero-interfaces in single-junction microcrystalline silicon (mc-Si:H) solar cells. We investigate the effect of different i–n layer stacks in thin mc-Si:H devices, in which recombination is significant at the interfaces as well as in the bulk material. By applying amorphous silicon passivating layers at the mc-Si:H i–n interface, we show a device with a high open-circuit voltage (Voc) of 608 mV, for a standard Raman crystalline fraction of the i-layer (>50%). This Voc is the highest reported value for a state-of-the-art mc-Si:H device made by plasma-enhanced chemical vapor deposition. We also report an efficiency of 9.45% for a solar cell with an absorber layer as thin as 650 nm on an area greater than 1 cm2, and show with a simple crystalline silicon model that for such thin mc-Si:H devices or mc-Si:H devices with a very high bulk-material quality, well-mastered interfaces and doped layers are of paramount importance for high efficiency.

We study amorphous silicon-germanium (a-SiGe:H) as intrinsic absorber material for thin-film silicon-based triple and quadruple junction solar cells. First, we present the development of a-SiGe:H single junction devices, in particular the Ge-content grading in the absorber layer, the influence of the Ge-content on electrical properties and (infra)red-response, and the influence of using different types of players. We subsequently show the incorporation of optimized single-junction devices in triple junction cells and discuss the interplay between Ge-content and intermediate reflector thickness. For triple junction devices with amorphous silicon (a-Si:H) top cells, a-SiGe:H middle cells and microcrystalline silicion (mu c-Si:H) bottom cells, we obtained an initial efficiency of 13.6% and an efficiency of 11.3% after light-soaking. We also present a quadruple junction device with an a-Si:H top cell, a low Ge-content a-SiGe:H second cell, and mu c-Si:H third and bottom cells. In this device configuration, we obtained an open-circuit voltage as high as 2.57 V. The performance of these cells was limited by not yet optimized current matching, leading nevertheless to an initial efficiency of 10.1%. A brief roadmap towards quadruple-junction devices with stabilized efficiencies of 14% is also outlined. (C) 2014 Elsevier B.V. All rights reserved.

We compare the performance of two back reflector designs on the optoelectrical properties of microcrystalline silicon solar cells. The first one consists of a 5-mu m-thick low-pressure chemical vapor deposition (LPCVD)-ZnO electrode combined with a white sheet; the second one incorporates an Ag reflector deposited on a thin LPCVD-ZnO layer (with thickness below 200nm). For this latter design, the optical loss in the nano-rough Ag reflector can be strongly reduced by smoothing the surface of the thin underlying ZnO layer, by means of an Ar-plasma treatment. Because of its superior lateral conductivity, the thin-ZnO/Ag back reflector design provides a higher fill factor than the dielectric back reflector design. When decreasing the roughness of the front electrode with respect to our standard front LPCVD-ZnO layer, the electrical cell performance is improved; in addition, the implementation of the thin-ZnO/Ag back reflector leads to a significant relative gain in light trapping. Applying this newly optimized combination of front and back electrodes, the conversion efficiency is improved from 8.9% up to 9.4%, for cells with an active-layer thickness of only 1.1 mu m. We thereby highlight the necessity to optimize simultaneously the front and back electrodes. Copyright (c) 2014 John Wiley & Sons, Ltd.

This short communication highlights our latest results towards high-efficiency microcrystalline silicon single-junction solar cells. By combining adequate cell design with high-quality material, a new world record efficiency was achieved for single-junction microcrystalline silicon solar cell, with a conversion efficiency of 10.69%, independently confirmed at ISE CalLab PV Cells. Such significant conversion efficiency could be achieved with only 1.8 µm of Si.

This paper gives new insights into the role of both the microstructure and the interfaces in microcrystalline silicon (μc- Si) single-junction solar cells. A 3-D tomographic reconstruction of a μc-Si solar cell reveals the 2-D nature of the porous zones, which can be present within the absorber layer. Tomography thus appears as a valuable technique to provide insights into the μc- Si microstructure. Variable illumination measurements enable to study the negative impact of such porous zones on solar cells performance. The influence of such defectivematerial can bemitigated by suitable cell design, as discussed here. Finally, a hydrogen plasma cell post-deposition treatment is demonstrated to improve solar cells performance, especially on rough superstrates, enabling us to reach an outstanding 10.9% efficiency microcrystalline singlejunction solar cell.

Optimized transparent conductive oxide front electrodes are vital to further increase the efficiency of thin film silicon solar devices. We report details on the fabrication of multiscale textured zinc oxide substrates and their implementation in amorphous silicon/microcrystalline silicon tandem (micromorph) devices. Such substrates allow separate optimization of light trapping in the top and bottom cells and efficient decoupling of transparency and conduction. We show in particular the need for sharp nanoscale texturing for antireflection and light trapping in the top cell. We also show that smooth micrometer scale texturing can efficiently improve large wavelength light management without degrading the quality of the silicon material grown on the substrate. By combining the appropriate morphologies high currents can be reached in both the top and bottom subcells while conserving the optimal electrical properties of the solar cells. © 2011 IEEE.

The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance.

Doped layers made of nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells. Their combination with optimized deposition processes for the silicon intrinsic layers is shown to allow for an increased resilience of the cell design to the substrate texture, with high electrical properties conserved on rough substrates. The presented optimizations thus permit turning the efficient light trapping provided by highly textured front electrodes into increased cell efficiencies, as reported for single junction cells and for amorphous silicon (a-Si)/microcrystalline silicon tandem cells. Initial and stabilized efficiencies of 12.7 and 11.3%, respectively, are reported for such tandem configuration implementing a 1.1 mu m thick microcrystalline silicon bottom cell.

The effect of a passivating buffer layer is studied in single-junction microcrystalline silicon (μc-Si:H:F) solar cells grown by PECVD from a SiF4/H2/Ar precursor mixture. We employ a variation of buffer layer thickness and absorber layer thickness in order to distinguish recombination processes occurring at the interfaces or within the bulk material. By introducing a thin amorphous i-n-layer stack between the microcrystalline intrinsic and n-doped layers an increase in open-circuit voltage (VOC) from 490 mV to 510 mV is observed for a 650 nm thin i-layer with very high Raman crystalline fraction (>85%).

Hydrogenated microcrystalline silicon (μc-Si:H) has become a material of increasing interest these last years mainly for its use in cost-effective production of tandem and triple junction thin film silicon based solar cells. Lately, the use of novel doped silicon oxide (SiO x ) layers were shown to be very promising for increasing the solar cells efficiency [1,2]. We present in this study a detailed analysis on the possible reasons behind this significant increase of electrical performances. Complete solar cells were developed in an industrial type reactor with their intrinsic layer (i-layer) deposited at a high growth rate of 1 nm/s by VHF-PECVD. Different i-layer material quality and substrate roughness were systematically evaluated during this investigation. We demonstrate conversion efficiency increase of up to 29% when both these p-type and n-type doped SiO x layers are used instead of the regular microcrystalline ones, while keeping the bulk of intrinsic material unchanged and efficiencies over 8% are achieved for a wider range of plasma parameters and substrate roughness. Extensive material analysis is presented hereafter to understand the physical origins for the improvements observed. XRD, Raman and FTIR spectroscopy, intrinsic stress, FTPS and SIMS measurements were done along with SEM images of the solar cells. It is found that devices with very different efficiencies can lead to similar FTIR and FTPS spectrum. We show that the integration of doped SiO x layers reduces to some extent the influence of porous regions, i.e. microcracks, on the electrical properties of the solar cells, and the possible physical reasons for this improvement are discussed. The development of these extrinsic defects, not detected by FTPS and FTIR, is becoming especially detrimental on highly textured substrates, required for increased light trapping. This highlights the fundamental nature difference of intrinsic and extrinsic defects which can both drive the cells performances.

We report here on the latest research developments of tandem micromorph (amorphous/ microcrystalline) silicon solar cells in our laboratory. High conversion efficiency for micromorph cells requires both a dedicated light management to keep the absorber layers as thin as possible, and optimized growth conditions of the microcrystalline silicon (μc-Si:H) material. We will show that an improved cell design based on the use of silicon oxide doped layers permits to achieve high efficiencies on substrates that are usually considered as inappropriate for μc-Si:H because of their roughness. Furthermore, recently, new front contacts based e.g. on bi-layers or Ultraviolet nanoimprint lithography were developed, leading to very promising results in micromorph solar cells. While efficiencies of 12.7% initial and 11.3% stable could be achieved with only 1.1 μm of bottom cell on a front rough Low Pressure Chemical Vapor Deposited (LPCVD) ZnO, a remarkable 12% initial was also reached on textured replica (as on the master). Emphasis is also laid in our lab on increasing the deposition rate of mc-Si:H while maintaining high quality material. This is done by reducing the interelectrode gap while working at high deposition pressure, in "powder free" processes at 40 MHz. We could observe that high pressure-low hydrogen dilution process conditions lead to dense high quality material. So far, conversion efficiencies up to 8.5% have been achieved at 1 nm/s for single junction μc-Si:H solar cells with 1.8 μm thick absorber layer. We also report a promising micromorph tandem initial efficiency of 11.9% with the μc-Si:H i-layer at 0.9 nm/s. High efficiency micromorph solar cells could thus be fabricated under conditions that are favorable to industrial, low-cost, fabrication of micromorph modules. Recent results of tandems combining original substrates and improved deposition processes suggest that stabilised efficiencies close to 13% can be expected in a near future.

Improving micromorph devices performances nowadays requires a current density increase: good devices typically exhibit an open circuit voltage times fill factor product of one (V oc ×FF∼1.4V×0.71=1). Their short-circuit current density (J sc ) value thus dictates their efficiency (expressed in %). Maximizing it with reasonable cells thicknesses necessitates therefore combining robust cell design with adequate light management through transparent electrodes and intermediate reflectors engineering. We will first show how record micromorph devices (13.5% initial and >11.5% stabilized efficiencies) are prepared on optimized single-layer ZnO electrodes. Such electrodes requirements will be discussed: 1) Strong and wide light scattering is needed on the entire useful wavelength range. Large features grant high total currents (>26mA/cm2) while sharp ones allow for high top cell currents (>13mA/cm2). 2) Sufficiently small or smooth substrate features permits high quality cell growth, providing good cell design (typically V oc over 1.4V). 3) Good conduction and transparency for electrodes (requiring ∼50cm2/V/s TCO mobility) should preserve sheet resistance close to 20Ω/□ (for FF>70%) with low absorption. We will then focus on pushing further micromorph devices potential. Either textured intermediate reflectors can fulfill the bottom cell needs, or double-texture substrates can be implemented: light scattering at large wavelengths is here achieved via nanoimprint lithography (a versatile approach to glass-texturing), topped by small and sharp ZnO features guaranteeing high top cell current. By combining excellent TCO with smart under-structures, thin devices delivering high currents with excellent efficiencies are within reach.

When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n -i -p configuration) or superstrate (in p -i -n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p -i -n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

Thin-film silicon solar cells are often deposited on textured ZnO substrates. The solar-cell performance is strongly correlated to the substrate morphology, as this morphology determines light scattering, defective-region formation, and crystalline growth of hydrogenated nanocrystalline silicon (nc-Si:H). Our objective is to gain deeper insight in these correlations using the slope distribution, rms roughness (σ(rms)) and correlation length (lc) of textured substrates. A wide range of surface morphologies was obtained by Ar plasma treatment and wet etching of textured and flat-as-deposited ZnO substrates. The σ(rms), lc and slope distribution were deduced from AFM scans. Especially, the slope distribution of substrates was represented in an efficient way that light scattering and film growth direction can be more directly estimated at the same time. We observed that besides a high σ(rms), a high slope angle is beneficial to obtain high haze and scattering of light at larger angles, resulting in higher short-circuit current density of nc-Si:H solar cells. However, a high slope angle can also promote the creation of defective regions in nc-Si:H films grown on the substrate. It is also found that the crystalline fraction of nc-Si:H solar cells has a stronger correlation with the slope distributions than with σ(rms) of substrates. In this study, we successfully correlate all these observations with the solar-cell performance by using the slope distribution of substrates.

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar cells resilience to the substrate roughness is reported to be possibly improved through optimizations of the cell design and of the silicon deposition processes. By further tailoring the superstrate texture, amorphous silicon / microcrystalline silicon (a-Si:H/mu c-Si:H) tandem solar cells with an initial efficiency up to 13.7 % and a stabilized efficiency up to 11.8 % are demonstrated on single-scale textured superstrates. An alternative approach combining large and smooth features nanoimprinted onto a transparent lacquer with small and sharp textures from as-grown LPCVD ZnO is then shown to have a high potential for further increasing TF-Si devices efficiency. First results demonstrate up to 14.1 % initial efficiency for a TF-Si tandem solar cell.

The quest for increased performances in thin-film silicon micromorph tandem devices nowadays requires an increase of current density. This can be achieved with thin cells by combining both robust cell design and efficient light management schemes. In this paper, we identify three key requirements for the transparent conductive oxide electrodes. First, strong light scattering into large angles is needed on the entire useful wavelength range: A front electrode texture with large enough features is shown to grant a high total current (typically >26 mA/cm2 with a 2.4-μm-thick absorber material), while sharp features are reported to allow for high top cell current (>13 mA/cm2) and reduced reflection at the ZnO/Si interface. Second, sufficiently smooth substrate features are needed to guarantee a high quality of the silicon active material, ensuring good and stable electrical properties (typically Voc around 1.4 V). Third, conduction and transparency of electrodes must be cleverly balanced, requiring high transparent conductive oxide mobility (∼50 cm $^2$ /V/s) to maintain the sheet resistance below 30 Ω/sq while keeping absorption as low as possible. Optimization of these three key requirements using ZnO electrodes allowed us to realize high-efficiency micromorph devices with 13.5% initial and 11.5% stabilized efficiency.

In this paper, we investigate tandem amorphous/microcrystalline silicon solar cells with asymmetric intermediate reflectors grown in the n–i–p substrate configuration. We compare different types of substrates with respect to their light-trapping properties as well as their influence on the growth of single-junction microcrystalline cells. Our most promising back reflector combines a textured zinc oxide film grown by low-pressure chemical vapor deposition, a silver film for reflection, and a zinc oxide buffer layer. Grown on this substrate, microcrystalline cells exhibit excellent response in the infrared while keeping high open-circuit voltage and fill factor, leading to efficiencies of up to 10.0%. After optimizing the morphology of the asymmetric intermediate reflector, we achieve an n–i–p micromorph solar cell stabilized efficiency of 11.6%, using 270 nm and 1.7 mm of silicon for the absorber layer of the amorphous top cell and the microcrystalline bottom cell, respectively. Using this original device architecture, we reach efficiencies close to those of state-of-the-art n–i–p and p–i–n micromorph devices, demonstrating a promising route to deposit high-efficiency thin-film silicon solar cells on opaque substrates.

We give an overview on recent progress in the synthesis, fabrication and integration of advanced nanostructured materials for efficient light trapping in high-efficiency thin-film silicon solar cells.

This paper focuses on our latest progress in n-i-p thin-micromorph solar-cell fabrication using textured back reflectors and asymmetric intermediate reflectors, both deposited by low-pressure chemical vapor deposition of zinc oxide. We then present microcrystalline bottom cells with high crystallinity, which yield excellent long wavelength response for relatively thin absorber thickness. In a 1.5-µm-thick µc-Si:H single-junction n-i-p solar cell, we thus obtain a short-circuit current density of 25.9 mA·cm−2, resulting in an initial cell efficiency of 9.1%. Subsequently, the roughness of the intermediate reflector layer is adapted for the growth of high-performance amorphous silicon (a-Si:H) top cells. Combining bottom cells with high current, an optimal intermediate reflector morphology and a 0.22-µm-thick a-Si:H top cell, we reach high initial open-circuit voltages of 1.45 V, and we obtain a stabilized cell with an efficiency of 11.1%, which is our best stable efficiency for n-i-p solar cells.

The greater crystallinity of solution-processed small-molecule organic semiconductors, compared to their polymer counterparts, renders the bulk heterojunction (BHJ) more susceptible to phase separation under thermal stress, decreasing device performance. Here we demonstrate and compare strategies to stabilize the donor: acceptor BHJ in DPP(TBFu)(2):PC61BM solar cells using molecular additives designed to either afford compatiblization (CP) of the bulk heterojunction, or to in situ link (ISL) the components using a functional azide group. Both additives were found to stop phase segregation of the BHJ under thermal stress. At 5 wt% loading the ISL additive prevents phase segregation, while altering the azide reaction mechanism by using UV-induced linking versus thermal induced linking was found to significantly affect the device performance. Including 5 wt% of the CP additive slowed phase segregation and devices retained 80% of their optimum performance after 3000 min of thermal treatment at 110 degrees C (compared to 50% with the control). The CP additive at 10 wt% changed drastically the kinetics of phase segregation leading to devices with no decrease in performance over 3000 min thermal treatment. Thin film morphology characterization together with photoluminescence and impedance spectroscopy give further insight into the performance differences between the additives. These results reinforce the conclusion that the compatiblization method is the most promising strategy to engineer highly-efficient thermally-stable organic photovoltaics based on solution-processed small molecules.

This contribution reviews some of the latest achievements and challenges in thin-film silicon photovoltaic (PV) technology based on amorphous and nanocrystalline silicon and their alloys. We address material and device developments, including (i) improved plasma deposition processes to achieve high-quality dense absorber materials; (ii) absorber layers based on silicon tetrafluoride, which lead to enhanced absorption in the near-infrared and yield outstanding short-circuit current densities; (iii) dedicated optimization of the interfaces and device architecture, as well as (iv) enhanced light harvesting by means of multi-scale textured substrates and reduced parasitic absorption in the non-active layers. This paper will describe how, by combining all of these advances along with precise control of plasmas over large areas, key results have been achieved in recent years, at both the cell and large-area module level, with stabilized efficiencies of over 13 and 12%, respectively.

High-efficiency thin-film silicon triple-junction solar cells in p-i-n configuration have been fabricated using amorphous silicon top cell absorber layers, as well as microcrystalline silicon middle and bottom cell absorbers. The triple-junction cells were fabricated on boron doped zinc oxide (ZnO) films with different surface morphologies. To this end, the naturally grown rough ZnO surfaces were flattened using an Ar plasma for three different treatment times. For the shortest time, we achieved a summed current density over 30 mA/cm(2) and initial and stabilized conversion efficiencies of 13.5% and 12.5%, respectively. For the medium treatment time, we obtained the highest efficiencies (13.7% initial and 12.8% stable), whereas the longest treatment time led to the highest open-circuit voltage (V-OC) of 1.91 V but lower current densities, leading to efficiencies of 12.9% initial and 12.2% stable, respectively. These results were obtained by combining various recently developed features and approaches: first of all, we implemented high-quality mu c-Si: H cells with novel buffer layers, leading to very high efficiencies. Second, we applied randomly textured pyramids on the front glass to improve light in-coupling, and finally, we used very thin (similar to 140 nm) top cells that led to a low light-induced degradation (5%-7% relative loss in efficiency).

The use of intrinsic silicon oxide as a buffer layer at the p-i interface of thin-film silicon solar cells is shown to provide significant advantages. For microcrystalline silicon solar cells, when associated with highly crystalline i-layers deposited at high rates, all electrical parameters are improved. Larger efficiency gains are achieved with substrates of increased roughness. For cells with an improved i-layer material quality, there is mainly a gain in short-circuit current density. An improvement in carrier collection in the blue region of the spectrum is systematically observed on all the cells. The presence of a silicon oxide buffer layer also promotes the nucleation of the subsequent intrinsic microcrystalline silicon layer. In amorphous silicon solar cells, the silicon oxide buffer layer is proven to act as an efficient barrier to boron cross-contamination, eliminating the need for additional processing steps (e.g. water vapor flush), while providing a wide bandgap material at the interface. The implementation of silicon oxide buffer layers for both types of cells thus provides a decisive improvement, as it allows extremely fast deposition of the full p-i-n stack of layers of the cell in a single-chamber configuration while providing a high-quality substrate-resilient p-i interface. (C) 2013 Elsevier B.V. All rights reserved.

In this contribution, we investigate the effect of post-deposition treatments on finished non-encapsulated thin-film microcrystalline silicon solar cells and show that annealing in vacuum leads to improved electrical properties of the solar cells, particularly for cells deposited on rough super strates. Our results suggest that both curing of intrinsic defects in the silicon, which can appear during the deposition of the ZnO back electrode, as well as an improvement of the ZnO back-electrode conductivity itself, occur during an annealing in vacuum, leading to large improvements of the open-circuit voltage and fill factor values. An improvement of the porous zones in the absorber layer, as induced by rough superstrates, is also observed by Fourier-transform photocurrent spectroscopy, implying that these porous zones cannot be considered as being purely bi-dimensional, but have a spatial extension within the absorber layer. (C) 2014 AIP Publishing LLC.