Search

Your search keyword '"Sitch, P.K."' showing total 5 results
Start Over Author "Sitch, P.K."
5 results on '"Sitch, P.K."'

1. A study of substitutional nitrogen impurities in chemical vapor deposited diamond

Author

Sitch, P.K., Jungnickel, G., Kaukonen, M., Porezag, D., Frauenheim, Th., Peerson, M.R., and Jackson, K.A.

Subjects
Chemical vapor deposition -- Research, Diamonds -- Research, Semiconductors -- Impurity distribution, Physics
Abstract

Research was conducted to examine the fourfold coordinate nature of N in chemical vapor deposited (CVD) diamond and tetrahedral amorphous carbon (ta-C). Measurements were based on a combination of density-functional methods at several levels of approximation used on supercell and cluster models. Results reveal that when the Fermi level, Ef falls below A1, N doping charge is transferred to the available deeper lying states.

Published
1998

2. Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces

Author

Kaukonen, M., Sitch, P.K., Jungnickel, G., Nieminen, R.M., Pöykkö, S., Porezag, D., Franheim, Th., Department of Applied Physics, Aalto-yliopisto, and Aalto University

Abstract

The doping of the chemical vapor deposition (CVD)-diamond (100):H(2×1) surface with B and N has been studied using the density-functional tight-binding method. In agreement with recent experimental results, B doping is found to lower the abstraction energies and remove diffusion barriers along the diamond growth pathway proposed by Harris and Goodwin [J. Phys. Chem. 97, 23 (1993)]. In contrast, the Harris-Goodwin mechanism is less favorable with N doping, casting doubt on its validity in this case. We therefore propose a growth pathway on N-doped CVD diamond (100):H(2×1) surfaces. This involves a dimer opening reaction and requires less H abstraction reactions compared to the Harris-Goodwin mechanism.

Published
1998

Catalog

Books, media, physical & digital resources
See catalog results